AB

Augusto Benvenuti

Micron: 16 patents #1,043 of 6,345Top 20%
SS Stmicroelectronics Sa: 2 patents #1,857 of 4,662Top 40%
OV Ovonyx: 1 patents #64 of 96Top 70%
IN Intel: 1 patents #18,218 of 30,777Top 60%
Overall (All Time): #166,247 of 4,157,543Top 4%
24
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
12190961 Erasing memory Giovanni Maria Paolucci, Paolo Tessariol, Emilio Camerlenghi, Gianpietro Carnevale 2025-01-07
12170324 Transistors and arrays of elevationally-extending strings of memory cells Ramanathan Gandhi, Giovanni Maria Paolucci 2024-12-17
11790991 Sequential voltage ramp-down of access lines of non-volatile memory device Albert Fayrushin, Akira Goda, Luca Laurin, Haitao Liu 2023-10-17
11715536 Apparatus for mitigating program disturb Daniele Cantarelli, Massimo Ernesto Bertuccio 2023-08-01
11616079 Semiconductor pillars having triangular-shaped lateral peripheries, and integrated assemblies Albert Fayrushin, Haitao Liu, Xin Lan 2023-03-28
11538919 Transistors and arrays of elevationally-extending strings of memory cells Ramanathan Gandhi, Giovanni Maria Paolucci 2022-12-27
11514987 Erasing memory Giovanni Maria Paolucci, Paolo Tessariol, Emilio Camerlenghi, Gianpietro Carnevale 2022-11-29
11417396 Sequential voltage ramp-down of access lines of non-volatile memory device Albert Fayrushin, Akira Goda, Luca Laurin, Haitao Liu 2022-08-16
11200958 Memories for mitigating program disturb Daniele Cantarelli, Massimo Ernesto Bertuccio 2021-12-14
11201167 Semiconductor pillars having triangular-shaped lateral peripheries, and integrated assemblies Albert Fayrushin, Haitao Liu, Xin Lan 2021-12-14
11011236 Erasing memory Giovanni Maria Paolucci, Paolo Tessariol, Emilio Camerlenghi, Gianpietro Carnevale 2021-05-18
10839927 Apparatus and methods for mitigating program disturb Daniele Cantarelli, Massimo Ernesto Bertuccio 2020-11-17
10803948 Sequential voltage ramp-down of access lines of non-volatile memory device Albert Fayrushin, Akira Goda, Luca Laurin, Haitao Liu 2020-10-13
9634063 Method, system and device for recessed contact in memory array Fabio Pellizzer, Antonino Rigano, Marcello Mariani 2017-04-25
9111857 Method, system and device for recessed contact in memory array Fabio Pellizzer, Antonino Rigano, Marcello Mariani 2015-08-18
8243497 Phase change memory device with reduced programming disturbance Fabio Pellizzer, Agostino Pirovano, Daniele Vimercati, Andrea Redaelli, Gerald Barkley 2012-08-14
8076211 Fabricating bipolar junction select transistors for semiconductor memories Agostino Pirovano, Fabio Pellizzer, Giorgio Servalli 2011-12-13
7985959 Self-aligned vertical bipolar junction transistor for phase change memories Michele Magistretti, Fabio Pellizzer, Marcello Mariani 2011-07-26
7875513 Self-aligned bipolar junction transistors Fabio Pellizzer, Roberto Bez, Paola Zuliani 2011-01-25
7872326 Array of vertical bipolar junction transistors, in particular selectors in a phase change memory device Michele Magistretti, Fabio Pellizzer 2011-01-18
7847373 Fabricating bipolar junction select transistors for semiconductor memories Agostino Pirovano, Fabio Pellizzer, Giorgio Servalli 2010-12-07
7563684 Process for manufacturing an array of cells including selection bipolar junction transistors Fabio Pellizzer, Giulio Casagrande, Roberto Gastaldi, Loris Vendrame, Tyler Lowrey 2009-07-21
7483296 Memory device with unipolar and bipolar selectors Ferdinando Bedeschi, Fabio Pellizzer, Loris Vendrame, Paola Zuliani 2009-01-27
6989580 Process for manufacturing an array of cells including selection bipolar junction transistors Fabio Pellizzer, Giulio Casagrande, Roberto Gastaldi, Loris Vendrame, Tyler Lowrey 2006-01-24