| 12190961 |
Erasing memory |
Giovanni Maria Paolucci, Paolo Tessariol, Emilio Camerlenghi, Gianpietro Carnevale |
2025-01-07 |
|
| 12170324 |
Transistors and arrays of elevationally-extending strings of memory cells |
Ramanathan Gandhi, Giovanni Maria Paolucci |
2024-12-17 |
|
| 11790991 |
Sequential voltage ramp-down of access lines of non-volatile memory device |
Albert Fayrushin, Akira Goda, Luca Laurin, Haitao Liu |
2023-10-17 |
$12,590,000 |
| 11715536 |
Apparatus for mitigating program disturb |
Daniele Cantarelli, Massimo Ernesto Bertuccio |
2023-08-01 |
$10,878,000 |
| 11616079 |
Semiconductor pillars having triangular-shaped lateral peripheries, and integrated assemblies |
Albert Fayrushin, Haitao Liu, Xin Lan |
2023-03-28 |
$13,032,000 |
| 11538919 |
Transistors and arrays of elevationally-extending strings of memory cells |
Ramanathan Gandhi, Giovanni Maria Paolucci |
2022-12-27 |
$11,504,000 |
| 11514987 |
Erasing memory |
Giovanni Maria Paolucci, Paolo Tessariol, Emilio Camerlenghi, Gianpietro Carnevale |
2022-11-29 |
$10,551,000 |
| 11417396 |
Sequential voltage ramp-down of access lines of non-volatile memory device |
Albert Fayrushin, Akira Goda, Luca Laurin, Haitao Liu |
2022-08-16 |
$9,745,000 |
| 11200958 |
Memories for mitigating program disturb |
Daniele Cantarelli, Massimo Ernesto Bertuccio |
2021-12-14 |
$22,879,000 |
| 11201167 |
Semiconductor pillars having triangular-shaped lateral peripheries, and integrated assemblies |
Albert Fayrushin, Haitao Liu, Xin Lan |
2021-12-14 |
$22,879,000 |
| 11011236 |
Erasing memory |
Giovanni Maria Paolucci, Paolo Tessariol, Emilio Camerlenghi, Gianpietro Carnevale |
2021-05-18 |
$21,936,000 |
| 10839927 |
Apparatus and methods for mitigating program disturb |
Daniele Cantarelli, Massimo Ernesto Bertuccio |
2020-11-17 |
$11,531,000 |
| 10803948 |
Sequential voltage ramp-down of access lines of non-volatile memory device |
Albert Fayrushin, Akira Goda, Luca Laurin, Haitao Liu |
2020-10-13 |
$16,272,000 |
| 9634063 |
Method, system and device for recessed contact in memory array |
Fabio Pellizzer, Antonino Rigano, Marcello Mariani |
2017-04-25 |
$25,813,000 |
| 9111857 |
Method, system and device for recessed contact in memory array |
Fabio Pellizzer, Antonino Rigano, Marcello Mariani |
2015-08-18 |
$7,931,000 |
| 8243497 |
Phase change memory device with reduced programming disturbance |
Fabio Pellizzer, Agostino Pirovano, Daniele Vimercati, Andrea Redaelli, Gerald Barkley |
2012-08-14 |
$3,153,000 |
| 8076211 |
Fabricating bipolar junction select transistors for semiconductor memories |
Agostino Pirovano, Fabio Pellizzer, Giorgio Servalli |
2011-12-13 |
$2,397,000 |
| 7985959 |
Self-aligned vertical bipolar junction transistor for phase change memories |
Michele Magistretti, Fabio Pellizzer, Marcello Mariani |
2011-07-26 |
$21,887,000 |
| 7875513 |
Self-aligned bipolar junction transistors |
Fabio Pellizzer, Roberto Bez, Paola Zuliani |
2011-01-25 |
|
| 7872326 |
Array of vertical bipolar junction transistors, in particular selectors in a phase change memory device |
Michele Magistretti, Fabio Pellizzer |
2011-01-18 |
$8,621,000 |
| 7847373 |
Fabricating bipolar junction select transistors for semiconductor memories |
Agostino Pirovano, Fabio Pellizzer, Giorgio Servalli |
2010-12-07 |
|
| 7563684 |
Process for manufacturing an array of cells including selection bipolar junction transistors |
Fabio Pellizzer, Giulio Casagrande, Roberto Gastaldi, Loris Vendrame, Tyler Lowrey |
2009-07-21 |
|
| 7483296 |
Memory device with unipolar and bipolar selectors |
Ferdinando Bedeschi, Fabio Pellizzer, Loris Vendrame, Paola Zuliani |
2009-01-27 |
|
| 6989580 |
Process for manufacturing an array of cells including selection bipolar junction transistors |
Fabio Pellizzer, Giulio Casagrande, Roberto Gastaldi, Loris Vendrame, Tyler Lowrey |
2006-01-24 |
$8,000,000 |
