| 10482954 |
Phase change memory device |
Fabio Pellizzer, Ferdinando Bedeschi, Roberto Gastaldi |
2019-11-19 |
$13,655,000 |
| 9876166 |
Phase change memory cell and manufacturing method thereof using minitrenches |
Fabio Pellizzer, Marina Tosi, Romina Zonca |
2018-01-23 |
$24,273,000 |
| 9779805 |
Phase change memory device |
Fabio Pellizzer, Ferdinando Bedeschi, Roberto Gastaldi |
2017-10-03 |
$8,798,000 |
| 9773977 |
Phase change memory cells |
Damon E. Van Gerpen |
2017-09-26 |
$15,703,000 |
| 9136467 |
Phase change memory cells and methods of forming phase change memory cells |
Damon E. Van Gerpen |
2015-09-15 |
$8,329,000 |
| 9064565 |
Phase change memory device |
Fabio Pellizzer, Ferdinando Bedeschi, Roberto Gastaldi |
2015-06-23 |
$6,707,000 |
| 8975148 |
Memory arrays and methods of forming memory cells |
Fabio Pellizzer, Lorenzo Fratin |
2015-03-10 |
$15,588,000 |
| 8553453 |
Phase change memory device |
Fabio Pellizzer, Ferdinando Bedeschi, Roberto Gastaldi |
2013-10-08 |
$4,711,000 |
| 8546231 |
Memory arrays and methods of forming memory cells |
Fabio Pellizzer, Lorenzo Fratin |
2013-10-01 |
$5,978,000 |
| 8410527 |
Electrical fuse device based on a phase-change memory element and corresponding programming method |
Fabio Pellizzer, Innocenzo Tortorelli, Agostino Pirovano |
2013-04-02 |
$1,920,000 |
| 8384148 |
Method of making a floating gate non-volatile MOS semiconductor memory device with improved capacitive coupling |
Paolo Tessariol, Marcello Mariani |
2013-02-26 |
$3,320,000 |
| 7993957 |
Phase change memory cell and manufacturing method thereof using minitrenches |
Fabio Pellizzer, Marina Tosi, Romina Zonca |
2011-08-09 |
$2,316,000 |
| 7875513 |
Self-aligned bipolar junction transistors |
Fabio Pellizzer, Paola Zuliani, Augusto Benvenuti |
2011-01-25 |
|
| 7772084 |
Process for self-aligned manufacture of integrated electronic devices |
Alessandro Grossi |
2010-08-10 |
|
| 7606056 |
Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array thereby manufactured |
Fabio Pellizzer, Maria Santina Marangon, Roberta Piva, Laura Aina |
2009-10-20 |
$8,977,000 |
| 7566610 |
Process for manufacturing integrated resistive elements with silicidation protection |
Alessandro Grossi, Giorgio Servalli |
2009-07-28 |
|
| 7468535 |
Self-aligned integrated electronic devices |
Alessandro Grossi |
2008-12-23 |
|
| 7446011 |
Array of cells including a selection bipolar transistor and fabrication method thereof |
Fabio Pellizzer, Giulio Casagrande |
2008-11-04 |
|
| 7422926 |
Self-aligned process for manufacturing phase change memory cells |
Fabio Pellizzer, Enrico Varesi, Agostino Pirovano, Pietro Petruzza |
2008-09-09 |
$5,050,000 |
| 7372166 |
Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof |
Giulio Casagrande, Fabio Pellizzer |
2008-05-13 |
$3,539,000 |
| 7307451 |
Field programmable gate array device |
Fabio Pellizzer, Guido De Sandre |
2007-12-11 |
$6,231,000 |
| 7259040 |
Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array manufactured thereby |
Fabio Pellizer |
2007-08-21 |
$7,208,000 |
| 7227171 |
Small area contact region, high efficiency phase change memory cell and fabrication method thereof |
Fabio Pellizzer, Caterina Riva, Romina Zonca |
2007-06-05 |
$8,123,000 |
| 7227765 |
Content addressable memory cell |
Guido De Sandre, Fabio Pellizzer |
2007-06-05 |
$8,123,000 |
| 7176553 |
Integrated resistive elements with silicidation protection |
Alessandro Grossi, Giorgio Servalli |
2007-02-13 |
$5,338,000 |