| 7939400 |
Systems and methods that selectively modify liner induced stress |
Satyavolu S. Papa Rao, Haowen Bu, Robert J. Kraft |
2011-05-10 |
$8,711,000 |
| 7682989 |
Formation of a silicon oxide interface layer during silicon carbide etch stop deposition to promote better dielectric stack adhesion |
Laura M. Matz, Thad E. Briggs, Robert J. Kraft |
2010-03-23 |
$12,131,000 |
| 7678713 |
Energy beam treatment to improve packaging reliability |
Andrew John McKerrow, Satyavolu Srinivas Papa Rao, Robert J. Kraft |
2010-03-16 |
$9,209,000 |
| 7442597 |
Systems and methods that selectively modify liner induced stress |
Satyavolu S. Papa Rao, Haowen Bu, Robert J. Kraft |
2008-10-28 |
$6,287,000 |
| 7341941 |
Methods to facilitate etch uniformity and selectivity |
Jeannette Michelle Jacques, Robert J. Kraft, Ping Jiang |
2008-03-11 |
$13,214,000 |
| 7342315 |
Method to increase mechanical fracture robustness of porous low k dielectric materials |
Andrew John McKerrow, Jeannette Michelle Jacques |
2008-03-11 |
$13,214,000 |
| 7282436 |
Plasma treatment for silicon-based dielectrics |
Ping Jiang, Hyesook Hong, Robert J. Kraft |
2007-10-16 |
$13,765,000 |
| 7268073 |
Post-polish treatment for inhibiting copper corrosion |
Deepak A. Ramappa, Mona Eissa, Christopher Lyle Borst |
2007-09-11 |
$11,319,000 |
| 7087518 |
Method of passivating and/or removing contaminants on a low-k dielectric/copper surface |
David Gerald Farber, William W. Dostalik, Robert J. Kraft, Andrew John McKerrow, Kenneth Newton |
2006-08-08 |
$15,054,000 |
| 6903000 |
System for improving thermal stability of copper damascene structure |
Jiong-Ping Lu, Qi-Zhong Hong, Tz-Cheng Chiu, Changming Jin, David Permana |
2005-06-07 |
$25,702,000 |
| 6881665 |
Depth of focus (DOF) for trench-first-via-last (TFVL) damascene processing with hard mask and low viscosity photoresist |
Stephen Keetai Park, Christian Zistl |
2005-04-19 |
$11,122,000 |
| 6806103 |
Method for fabricating semiconductor devices that uses efficient plasmas |
Andrew John McKerrow, Yuji Richard Kuan |
2004-10-19 |
$15,318,000 |
| 6780756 |
Etch back of interconnect dielectrics |
David Gerald Farber, Robert J. Kraft, Craig Huffman |
2004-08-24 |
$13,108,000 |
| 6607945 |
Laser-assisted silicide fuse programming |
— |
2003-08-19 |
$7,296,000 |
| 6583070 |
Semiconductor device having a low dielectric constant material |
Ercan Adem |
2003-06-24 |
$2,352,000 |
| 6498112 |
Graded oxide caps on low dielectric constant (low K) chemical vapor deposition (CVD) films |
Jeremy I. Martin |
2002-12-24 |
$3,750,000 |
| 6489238 |
Method to reduce photoresist contamination from silicon carbide films |
— |
2002-12-03 |
$33,237,000 |
| 6407558 |
Method of determining the doping concentration across a surface of a semiconductor material |
Sunil N. Shabde, Yowjuang W. Liu |
2002-06-18 |
$3,499,000 |
| 6339958 |
Adhesion strength testing using a depth-sensing indentation technique |
Young-Chang Joo |
2002-01-22 |
$12,658,000 |
| 6320403 |
Method of determining the doping concentration and defect profile across a surface of a processed semiconductor material |
Sunil N. Shabde, Yowjuang W. Liu |
2001-11-20 |
$3,380,000 |
| 6309942 |
STI punch-through defects and stress reduction by high temperature oxide reflow process |
Robert H. Tu, Xiao-Yu Li, Sunil Mehta |
2001-10-30 |
$4,666,000 |
| 6242790 |
Using polysilicon fuse for IC programming |
Reading Maley |
2001-06-05 |
$7,807,000 |
| 6208154 |
Method of determining the doping concentration across a surface of a semiconductor material |
Sunil N. Shabde, Yowjuang W. Liu |
2001-03-27 |
$5,495,000 |
| 6208030 |
Semiconductor device having a low dielectric constant material |
Ercan Adem |
2001-03-27 |
$5,495,000 |
| 6177802 |
System and method for detecting defects in an interlayer dielectric of a semiconductor device using the hall-effect |
Sunil N. Shabde, Yowjuang W. Liu |
2001-01-23 |
$6,489,000 |
