Issued Patents All Time
Showing 1–25 of 48 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10269993 | Use of metal phosphorus in metallization of photovoltaic devices and method of fabricating same | Kathryn C. Fisher, Qiang Huang | 2019-04-23 |
| 10170644 | Processes for uniform metal semiconductor alloy formation for front side contact metallization and photovoltaic device formed therefrom | Kathryn C. Fisher, Qiang Huang, David L. Rath | 2019-01-01 |
| 10167443 | Wet clean process for removing CxHyFz etch residue | Robert L. Bruce, Sebastian U. Engelmann, Eric A. Joseph, Mahmoud Khojasteh, Masahiro Nakamura +3 more | 2019-01-01 |
| 9786852 | Semiconductor device with ballistic gate length structure | Aaron D. Franklin, Shu-Jen Han, Joshua T. Smith | 2017-10-10 |
| 9608134 | Processes for uniform metal semiconductor alloy formation for front side contact metallization and photovoltaic device formed therefrom | Kathryn C. Fisher, Qiang Huang, David L. Rath | 2017-03-28 |
| 9536731 | Wet clean process for removing CxHyFz etch residue | Robert L. Bruce, Sebastian U. Engelmann, Eric A. Joseph, Mahmoud Khojasteh, Masahiro Nakamura +3 more | 2017-01-03 |
| 9284656 | Use of metal phosphorus in metallization of photovoltaic devices and method of fabricating same | Kathryn C. Fisher, Qiang Huang | 2016-03-15 |
| 9246024 | Photovoltaic device with aluminum plated back surface field and method of forming same | Kathryn C. Fisher, Qiang Huang, Ming-Ling Yeh | 2016-01-26 |
| 9246112 | Semiconductor device with ballistic gate length structure | Aaron D. Franklin, Shu-Jen Han, Joshua T. Smith | 2016-01-26 |
| 9188578 | Nanogap device with capped nanowire structures | Yann Astier, Jingwei Bai, Kathleen B. Reuter, Joshua T. Smith | 2015-11-17 |
| 9182369 | Manufacturable sub-3 nanometer palladium gap devices for fixed electrode tunneling recognition | Yann Astier, Jingwei Bai, Michael A. Guillorn, Joshua T. Smith | 2015-11-10 |
| 9168717 | Solid state nanopore devices for nanopore applications to improve the nanopore sensitivity and methods of manufacture | Yann Astier, Jingwei Bai, Kathleen B. Reuter, Joshua T. Smith | 2015-10-27 |
| 9128078 | Manufacturable sub-3 nanometer palladium gap devices for fixed electrode tunneling recognition | Yann Astier, Jingwei Bai, Michael A. Guillorn, Joshua T. Smith | 2015-09-08 |
| 9097698 | Nanogap device with capped nanowire structures | Yann Astier, Jingwei Bai, Kathleen B. Reuter, Joshua T. Smith | 2015-08-04 |
| 9085120 | Solid state nanopore devices for nanopore applications to improve the nanopore sensitivity and methods of manufacture | Yann Astier, Jingwei Bai, Kathleen B. Reuter, Joshua T. Smith | 2015-07-21 |
| 9012329 | Nanogap in-between noble metals | Yann Astier, Jingwei Bai, Michael F. Lofaro, Joshua T. Smith, Chao Wang | 2015-04-21 |
| 9013010 | Nanopore sensor device | Josephine B. Chang, Michael A. Guillorn, Eric A. Joseph | 2015-04-21 |
| 8969122 | Processes for uniform metal semiconductor alloy formation for front side contact metallization and photovoltaic device formed therefrom | Kathryn C. Fisher, Qiang Huang, David L. Rath | 2015-03-03 |
| 8962374 | Integration of a titania layer in an anti-reflective coating | Kathryn C. Fisher, Harold J. Hovel, Qiang Huang, Susan Huang, Young-Hee Kim | 2015-02-24 |
| 8946844 | Integration of a titania layer in an anti-reflective coating | Kathryn C. Fisher, Harold J. Hovel, Qiang Huang, Young-Hee Kim, Susan Huang | 2015-02-03 |
| 8900975 | Nanopore sensor device | Josephine B. Chang, Michael A. Guillorn, Eric A. Joseph | 2014-12-02 |
| 8865017 | Silicon surface texturing method for reducing surface reflectance | Mahadevaiyer Krishnan, Jun Liu, George G. Totir | 2014-10-21 |
| 8865502 | Solar cells with plated back side surface field and back side electrical contact and method of fabricating same | Kathryn C. Fisher, Nicholas C. M. Fuller, Xiaoyan Shao, Jeffrey Hedrick | 2014-10-21 |
| 8637405 | Silicon surface texturing method for reducing surface reflectance | Mahadevaiyer Krishnan, Jun Liu, George G. Totir | 2014-01-28 |
| 8604587 | Capacitor integration at top-metal level with a protective cladding for copper surface protection | Edmund Burke, Timothy A. Rost | 2013-12-10 |