Issued Patents All Time
Showing 1–24 of 24 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11913395 | Intelligent control method, apparatus, storage medium and device for engine initiation | Conghui An, Yiqiang LIU, Zhiwei Qiao, Zhengxing Dai, Jiang Tang +1 more | 2024-02-27 |
| 10896991 | Photovoltaic devices and method of manufacturing | Sanghyun Lee, Jun-Ying Zhang | 2021-01-19 |
| 10367110 | Photovoltaic devices and method of manufacturing | Sanghyun Lee, Jun-Ying Zhang | 2019-07-30 |
| 7910936 | N2 based plasma treatment for enhanced sidewall smoothing and pore sealing of porous low-k dielectric films | Sameer Ajmera, Patricia B. Smith | 2011-03-22 |
| 7745335 | Semiconductor device manufactured by reducing hillock formation in metal interconnects | Ju-Ai Ruan, Sopa Chevacharoenkul, Satyavolu Papa Rao, Tae Seung Kim | 2010-06-29 |
| 7732324 | Semiconductor device having improved adhesion and reduced blistering between etch stop layer and dielectric layer | Ju-Ai Ruan, Sameer Ajmera, Anand J. Reddy, Tae Seung Kim | 2010-06-08 |
| 7476602 | N2 based plasma treatment for enhanced sidewall smoothing and pore sealing porous low-k dielectric films | Sameer Ajmera, Patricia B. Smith | 2009-01-13 |
| 7187080 | Semiconductor device with a conductive layer including a copper layer with a dopant | Qing Jiang, Joseph D. Luttmer | 2007-03-06 |
| 7037823 | Method to reduce silanol and improve barrier properties in low k dielectric ic interconnects | Phillip D. Matz, Sameer Ajmera, Trace Hurd | 2006-05-02 |
| 6911394 | Semiconductor devices and methods of manufacturing such semiconductor devices | Qing Jiang, Joseph D. Luttmer | 2005-06-28 |
| 6903000 | System for improving thermal stability of copper damascene structure | Jiong-Ping Lu, Qi-Zhong Hong, Tz-Cheng Chiu, David Permana, Ting Tsui | 2005-06-07 |
| 6838300 | Chemical treatment of low-k dielectric films | Phillip D. Matz, Heungsoo Park, Patricia B. Smith, Andrew John McKerrow | 2005-01-04 |
| 6800547 | Integrated circuit dielectric and method | Jiong-Ping Lu | 2004-10-05 |
| 6800928 | Porous integrated circuit dielectric with decreased surface porosity | Wei William Lee, Richard Scott List | 2004-10-05 |
| 6784121 | Integrated circuit dielectric and method | Richard Scott List, Joseph D. Luttmer | 2004-08-31 |
| 6723636 | Methods for forming multiple damascene layers | Noel Russell, Kenneth Newton | 2004-04-20 |
| 6583053 | Use of a sacrificial layer to facilitate metallization for small features | Jiong-Ping Lu, David Permana | 2003-06-24 |
| 6573167 | Using a carbon film as an etch hardmask for hard-to-etch materials | Guoqiang Xing, Wei-Yung Hsu | 2003-06-03 |
| 6424040 | Integration of fluorinated dielectrics in multi-level metallizations | Somnath Nag, Wei-Yung Hsu, Guoqiang Xing | 2002-07-23 |
| 6351039 | Integrated circuit dielectric and method | Kelly Taylor, Wei William Lee | 2002-02-26 |
| 6284675 | Method of forming integrated circuit dielectric by evaporating solvent to yield phase separation | Joseph D. Luttmer | 2001-09-04 |
| 6265303 | Integrated circuit dielectric and method | Jiong-Ping Lu | 2001-07-24 |
| 6059553 | Integrated circuit dielectrics | Stacey A. Yamanaka, R. Scott List | 2000-05-09 |
| 6008540 | Integrated circuit dielectric and method | Jiong-Ping Lu | 1999-12-28 |