| 11913395 |
Intelligent control method, apparatus, storage medium and device for engine initiation |
Conghui An, Yiqiang LIU, Zhiwei Qiao, Zhengxing Dai, Jiang Tang +1 more |
2024-02-27 |
|
| 10896991 |
Photovoltaic devices and method of manufacturing |
Sanghyun Lee, Jun-Ying Zhang |
2021-01-19 |
$148,103,000 |
| 10367110 |
Photovoltaic devices and method of manufacturing |
Sanghyun Lee, Jun-Ying Zhang |
2019-07-30 |
$53,613,000 |
| 7910936 |
N2 based plasma treatment for enhanced sidewall smoothing and pore sealing of porous low-k dielectric films |
Sameer Ajmera, Patricia B. Smith |
2011-03-22 |
$15,102,000 |
| 7745335 |
Semiconductor device manufactured by reducing hillock formation in metal interconnects |
Ju-Ai Ruan, Sopa Chevacharoenkul, Satyavolu Papa Rao, Tae Seung Kim |
2010-06-29 |
$5,601,000 |
| 7732324 |
Semiconductor device having improved adhesion and reduced blistering between etch stop layer and dielectric layer |
Ju-Ai Ruan, Sameer Ajmera, Anand J. Reddy, Tae Seung Kim |
2010-06-08 |
$6,153,000 |
| 7476602 |
N2 based plasma treatment for enhanced sidewall smoothing and pore sealing porous low-k dielectric films |
Sameer Ajmera, Patricia B. Smith |
2009-01-13 |
$9,458,000 |
| 7187080 |
Semiconductor device with a conductive layer including a copper layer with a dopant |
Qing Jiang, Joseph D. Luttmer |
2007-03-06 |
$19,684,000 |
| 7037823 |
Method to reduce silanol and improve barrier properties in low k dielectric ic interconnects |
Phillip D. Matz, Sameer Ajmera, Trace Hurd |
2006-05-02 |
$13,705,000 |
| 6911394 |
Semiconductor devices and methods of manufacturing such semiconductor devices |
Qing Jiang, Joseph D. Luttmer |
2005-06-28 |
$23,764,000 |
| 6903000 |
System for improving thermal stability of copper damascene structure |
Jiong-Ping Lu, Qi-Zhong Hong, Tz-Cheng Chiu, David Permana, Ting Tsui |
2005-06-07 |
$25,702,000 |
| 6838300 |
Chemical treatment of low-k dielectric films |
Phillip D. Matz, Heungsoo Park, Patricia B. Smith, Andrew John McKerrow |
2005-01-04 |
$29,417,000 |
| 6800547 |
Integrated circuit dielectric and method |
Jiong-Ping Lu |
2004-10-05 |
$16,258,000 |
| 6800928 |
Porous integrated circuit dielectric with decreased surface porosity |
Wei William Lee, Richard Scott List |
2004-10-05 |
$16,258,000 |
| 6784121 |
Integrated circuit dielectric and method |
Richard Scott List, Joseph D. Luttmer |
2004-08-31 |
$10,407,000 |
| 6723636 |
Methods for forming multiple damascene layers |
Noel Russell, Kenneth Newton |
2004-04-20 |
$14,356,000 |
| 6583053 |
Use of a sacrificial layer to facilitate metallization for small features |
Jiong-Ping Lu, David Permana |
2003-06-24 |
$22,158,000 |
| 6573167 |
Using a carbon film as an etch hardmask for hard-to-etch materials |
Guoqiang Xing, Wei-Yung Hsu |
2003-06-03 |
$32,855,000 |
| 6424040 |
Integration of fluorinated dielectrics in multi-level metallizations |
Somnath Nag, Wei-Yung Hsu, Guoqiang Xing |
2002-07-23 |
$26,143,000 |
| 6351039 |
Integrated circuit dielectric and method |
Kelly Taylor, Wei William Lee |
2002-02-26 |
$64,666,000 |
| 6284675 |
Method of forming integrated circuit dielectric by evaporating solvent to yield phase separation |
Joseph D. Luttmer |
2001-09-04 |
$36,443,000 |
| 6265303 |
Integrated circuit dielectric and method |
Jiong-Ping Lu |
2001-07-24 |
$67,767,000 |
| 6059553 |
Integrated circuit dielectrics |
Stacey A. Yamanaka, R. Scott List |
2000-05-09 |
$66,335,000 |
| 6008540 |
Integrated circuit dielectric and method |
Jiong-Ping Lu |
1999-12-28 |
$30,761,000 |