NR

Noel Russell

TE Tel Epion: 22 patents #2 of 54Top 4%
TI Texas Instruments: 15 patents #889 of 12,488Top 8%
TL Tokyo Electron Limited: 2 patents #2,602 of 5,567Top 50%
📍 Cohoes, NY: #10 of 185 inventorsTop 6%
🗺 New York: #2,725 of 115,490 inventorsTop 3%
Overall (All Time): #82,722 of 4,157,543Top 2%
39
Patents All Time

Issued Patents All Time

Showing 1–25 of 39 patents

Patent #TitleCo-InventorsDate
10971411 Hybrid corrective processing system and method Joshua LaRose, Brian D. Pfeifer, Vincent Lagana-Gizzo 2021-04-06
10665779 Methods for additive formation of a STT MRAM stack Jeffrey Smith 2020-05-26
10256095 Method for high throughput using beam scan size and beam position in gas cluster ion beam processing system Soo Doo Chae, Joshua LaRose, Nicholas Joy, Luis Fernandez, Allen J. Leith +3 more 2019-04-09
10109789 Methods for additive formation of a STT MRAM stack Jeffrey Smith 2018-10-23
10096527 Hybrid corrective processing system and method Joshua LaRose, Brian D. Pfeifer, Vincent Lagana-Gizzo 2018-10-09
9875947 Method of surface profile correction using gas cluster ion beam Soo Doo Chae, Vincent Gizzo, Joshua LaRose, Nicholas Joy 2018-01-23
9735019 Process gas enhancement for beam treatment of a substrate Michael Graf, Matthew C. Gwinn, Allen J. Leith 2017-08-15
9500946 Sidewall spacer patterning method using gas cluster ion beam Soo Doo Chae, Youngdon Chang, Il-seok Song 2016-11-22
9502209 Multi-step location specific process for substrate edge profile correction for GCIB system Hongyu Yue, Vincent Gizzo, Joshua LaRose, Steven P. Caliendo 2016-11-22
9123505 Apparatus and methods for implementing predicted systematic error correction in location specific processing Vincent Lagana-Gizzo, Joshua LaRose, Soo Doo Chae 2015-09-01
9105443 Multi-step location specific process for substrate edge profile correction for GCIB system Hongyu Yue, Vincent Gizzo, Joshua LaRose, Steven P. Caliendo 2015-08-11
8709944 Method to alter silicide properties using GCIB treatment John Hautala, John Gumpher 2014-04-29
8703607 Method to alter silicide properties using GCIB treatment John Hautala, John Gumpher 2014-04-22
8435890 Method to alter silicide properties using GCIB treatment John Hautala, John Gumpher 2013-05-07
8338806 Gas cluster ion beam system with rapid gas switching apparatus Michael Graf, Robert K. Becker, Christopher T. Reddy 2012-12-25
8237136 Method and system for tilting a substrate during gas cluster ion beam processing John Hautala 2012-08-07
8226835 Ultra-thin film formation using gas cluster ion beam processing John Hautala, Edmund Burke, Gregory Herdt 2012-07-24
8192805 Method to improve electrical leakage performance and to minimize electromigration in semiconductor devices Steven R. Sherman, John Hautala 2012-06-05
8187971 Method to alter silicide properties using GCIB treatment John Hautala, John Gumpher 2012-05-29
8048788 Method for treating non-planar structures using gas cluster ion beam processing John Hautala 2011-11-01
7981483 Method to improve electrical leakage performance and to minimize electromigration in semiconductor devices Steven R. Sherman, John Hautala 2011-07-19
7871929 Method of forming semiconductor devices containing metal cap layers Frank M. Cerio, Jr., Gregory Herdt 2011-01-18
7803703 Metal-germanium physical vapor deposition for semiconductor device defect reduction Doufeng Yue, Peijun Chen, Douglas E. Mercer 2010-09-28
7776743 Method of forming semiconductor devices containing metal cap layers Frank M. Cerio, Jr., Gregory Herdt 2010-08-17
7754588 Method to improve a copper/dielectric interface in semiconductor devices Steven R. Sherman, John Hautala 2010-07-13