Issued Patents All Time
Showing 1–23 of 23 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8242019 | Selective deposition of metal-containing cap layers for semiconductor devices | Tadahiro Ishizaka, Shigeru Mizuno, Satohiko Hoshino, Hiroyuki Nagai, Yuki Chiba | 2012-08-14 |
| 8227344 | Hybrid in-situ dry cleaning of oxidized surface layers | Adam Selsley | 2012-07-24 |
| 8178439 | Surface cleaning and selective deposition of metal-containing cap layers for semiconductor devices | Kazuhito Tohnoe | 2012-05-15 |
| 8163087 | Plasma enhanced atomic layer deposition system and method | Jacques Faguet, Tsukasa Matsuda, Kaoru Yamamoto | 2012-04-24 |
| 8076241 | Methods for multi-step copper plating on a continuous ruthenium film in recessed features | Shigeru Mizuno, Jonathan D. Reid, Thomas A. Ponnuswamy | 2011-12-13 |
| 7901545 | Ionized physical vapor deposition (iPVD) process | Jacques Faguet, Bruce Gittleman, Rodney L. Robison | 2011-03-08 |
| 7892406 | Ionized physical vapor deposition (iPVD) process | — | 2011-02-22 |
| 7871929 | Method of forming semiconductor devices containing metal cap layers | Noel Russell, Gregory Herdt | 2011-01-18 |
| 7799681 | Method for forming a ruthenium metal cap layer | Kenji Suzuki, Miho Jomen, Shigeru Mizuno, Yasushi Mizusawa, Tadahiro Ishizaka | 2010-09-21 |
| 7776743 | Method of forming semiconductor devices containing metal cap layers | Noel Russell, Gregory Herdt | 2010-08-17 |
| 7744735 | Ionized PVD with sequential deposition and etching | Rodney L. Robison, Jacques Faguet, Bruce Gittleman, Tugrul Yasar, Jozef Brcka | 2010-06-29 |
| 7727912 | Method of light enhanced atomic layer deposition | Tadahiro Ishizaka, Jacques Faguet | 2010-06-01 |
| 7700484 | Method and apparatus for a metallic dry-filling process | — | 2010-04-20 |
| 7700474 | Barrier deposition using ionized physical vapor deposition (iPVD) | — | 2010-04-20 |
| 7651568 | Plasma enhanced atomic layer deposition system | Tadahiro Ishizaka, Tsukasa Matsuda, Kaoru Yamamoto | 2010-01-26 |
| 7642201 | Sequential tantalum-nitride deposition | Shigeru Mizuno, Tsukasa Matsuda, Adam Selsey | 2010-01-05 |
| 7618888 | Temperature-controlled metallic dry-fill process | — | 2009-11-17 |
| 7588667 | Depositing rhuthenium films using ionized physical vapor deposition (IPVD) | — | 2009-09-15 |
| 7348266 | Method and apparatus for a metallic dry-filling process | — | 2008-03-25 |
| 6755945 | Ionized PVD with sequential deposition and etching | Tugrul Yasar, Glyn Reynolds, Bruce Gittleman, Michael Grapperhaus, Rodney L. Robison | 2004-06-29 |
| 6719886 | Method and apparatus for ionized physical vapor deposition | John Drewery, Glyn Reynolds, Derrek Andrew Russell, Jozef Brcka, Mirko Vukovic +2 more | 2004-04-13 |
| 6287435 | Method and apparatus for ionized physical vapor deposition | John Drewery, Glyn Reynolds, Derrek Andrew Russell, Jozef Brcka, Mirko Vukovic +2 more | 2001-09-11 |
| 6268284 | In situ titanium aluminide deposit in high aspect ratio features | — | 2001-07-31 |