| 7157795 |
Composite tantalum nitride/tantalum copper capping layer |
Steven C. Avanzino, Christy Mei-Chu Woo |
2007-01-02 |
|
| 7146588 |
Predicting EM reliability by decoupling extrinsic and intrinsic sigma |
Amit P. Marathe |
2006-12-05 |
$14,281,000 |
| 7132363 |
Stabilizing fluorine etching of low-k materials |
Kai Yang, Fei Wang |
2006-11-07 |
$14,140,000 |
| 7071564 |
Composite tantalum capped inlaid copper with reduced electromigration and reduced stress migration |
Steven C. Avanzino, Christy Mei-Chu Woo |
2006-07-04 |
|
| 6979625 |
Copper interconnects with metal capping layer and selective copper alloys |
Christy Mei-Chu Woo, Connie P. Wang |
2005-12-27 |
$8,074,000 |
| 6869878 |
Method of forming a selective barrier layer using a sacrificial layer |
Ercan Adem, John Sanchez, Suzette K. Pangrle |
2005-03-22 |
$6,839,000 |
| 6831003 |
Continuous barrier for interconnect structure formed in porous dielectric material with minimized electromigration |
Richard J. Huang, Pin-Chin Connie Wang |
2004-12-14 |
$6,995,000 |
| 6768204 |
Self-aligned conductive plugs in a semiconductor device |
Todd P. Lukanc, Fei Wang |
2004-07-27 |
$2,306,000 |
| 6756306 |
Low temperature dielectric deposition to improve copper electromigration performance |
Steven C. Avanzino |
2004-06-29 |
$3,195,000 |
| 6756303 |
Diffusion barrier and method for its production |
Fei Wang |
2004-06-29 |
$3,195,000 |
| 6727592 |
Copper interconnect with improved barrier layer |
Christy Mei-Chu Woo, John Sanchez, Amit P. Marathe |
2004-04-27 |
$2,236,000 |
| 6717266 |
Use of an alloying element to form a stable oxide layer on the surface of metal features |
Amit P. Marathe |
2004-04-06 |
$3,021,000 |
| 6689689 |
Selective deposition process for allowing damascene-type Cu interconnect lines |
Paul R. Besser, Sergey Lopatin |
2004-02-10 |
$3,739,000 |
| 6500754 |
Anneal hillock suppression method in integrated circuit interconnects |
Steven C. Avanzino, Alline F. Myers |
2002-12-31 |
$2,157,000 |
| 6465889 |
Silicon carbide barc in dual damascene processing |
Ramkumar Subramanian, Fei Wang, Lynne A. Okada, Calvin T. Gabriel |
2002-10-15 |
$861,000 |
| 6454916 |
Selective electroplating with direct contact chemical polishing |
Fei Wang, Steven C. Avanzino |
2002-09-24 |
$1,057,000 |
| 6455425 |
Selective deposition process for passivating top interface of damascene-type Cu interconnect lines |
Paul R. Besser, Sergey Lopatin |
2002-09-24 |
$1,057,000 |
| 6444567 |
Process for alloying damascene-type Cu interconnect lines |
Paul R. Besser |
2002-09-03 |
$1,843,000 |
| 6383947 |
Anti-reflective coating used in the fabrication of microcircuit structures in 0.18 micron and smaller technologies |
Paul R. Besser, Bhanwar Singh, Susan H. Chen, Carmen Morales |
2002-05-07 |
$2,110,000 |
| 6380091 |
Dual damascene arrangement for metal interconnection with oxide dielectric layer and low K dielectric constant layer |
Fei Wang, Jerry Cheng |
2002-04-30 |
$1,930,000 |
| 6319819 |
Process for passivating top interface of damascene-type Cu interconnect lines |
Paul R. Besser |
2001-11-20 |
$3,380,000 |
| 6319834 |
Method and apparatus for improved planarity metallization by electroplating and CMP |
Steven C. Avanzino, Fei Wang |
2001-11-20 |
$3,380,000 |
| 6207577 |
Self-aligned dual damascene arrangement for metal interconnection with oxide dielectric layer and low k dielectric constant layer |
Fei Wang, Jerry Cheng |
2001-03-27 |
$5,495,000 |
| 6169034 |
Chemically removable Cu CMP slurry abrasive |
Steven C. Avanzino, Diana M. Schonauer, Kai Yang |
2001-01-02 |
$6,157,000 |
| 6165855 |
Antireflective coating used in the fabrication of microcircuit structures in 0.18 micron and smaller technologies |
Paul R. Besser, Bhanwar Singh, Susan H. Chen, Carmen Morales |
2000-12-26 |
$2,711,000 |
