Issued Patents All Time
Showing 25 most recent of 45 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7157795 | Composite tantalum nitride/tantalum copper capping layer | Steven C. Avanzino, Christy Mei-Chu Woo | 2007-01-02 |
| 7146588 | Predicting EM reliability by decoupling extrinsic and intrinsic sigma | Amit P. Marathe | 2006-12-05 |
| 7132363 | Stabilizing fluorine etching of low-k materials | Kai Yang, Fei Wang | 2006-11-07 |
| 7071564 | Composite tantalum capped inlaid copper with reduced electromigration and reduced stress migration | Steven C. Avanzino, Christy Mei-Chu Woo | 2006-07-04 |
| 6979625 | Copper interconnects with metal capping layer and selective copper alloys | Christy Mei-Chu Woo, Connie P. Wang | 2005-12-27 |
| 6869878 | Method of forming a selective barrier layer using a sacrificial layer | Ercan Adem, John Sanchez, Suzette K. Pangrle | 2005-03-22 |
| 6831003 | Continuous barrier for interconnect structure formed in porous dielectric material with minimized electromigration | Richard J. Huang, Pin-Chin Connie Wang | 2004-12-14 |
| 6768204 | Self-aligned conductive plugs in a semiconductor device | Todd P. Lukanc, Fei Wang | 2004-07-27 |
| 6756306 | Low temperature dielectric deposition to improve copper electromigration performance | Steven C. Avanzino | 2004-06-29 |
| 6756303 | Diffusion barrier and method for its production | Fei Wang | 2004-06-29 |
| 6727592 | Copper interconnect with improved barrier layer | Christy Mei-Chu Woo, John Sanchez, Amit P. Marathe | 2004-04-27 |
| 6717266 | Use of an alloying element to form a stable oxide layer on the surface of metal features | Amit P. Marathe | 2004-04-06 |
| 6689689 | Selective deposition process for allowing damascene-type Cu interconnect lines | Paul R. Besser, Sergey Lopatin | 2004-02-10 |
| 6500754 | Anneal hillock suppression method in integrated circuit interconnects | Steven C. Avanzino, Alline F. Myers | 2002-12-31 |
| 6465889 | Silicon carbide barc in dual damascene processing | Ramkumar Subramanian, Fei Wang, Lynne A. Okada, Calvin T. Gabriel | 2002-10-15 |
| 6454916 | Selective electroplating with direct contact chemical polishing | Fei Wang, Steven C. Avanzino | 2002-09-24 |
| 6455425 | Selective deposition process for passivating top interface of damascene-type Cu interconnect lines | Paul R. Besser, Sergey Lopatin | 2002-09-24 |
| 6444567 | Process for alloying damascene-type Cu interconnect lines | Paul R. Besser | 2002-09-03 |
| 6383947 | Anti-reflective coating used in the fabrication of microcircuit structures in 0.18 micron and smaller technologies | Paul R. Besser, Bhanwar Singh, Susan H. Chen, Carmen Morales | 2002-05-07 |
| 6380091 | Dual damascene arrangement for metal interconnection with oxide dielectric layer and low K dielectric constant layer | Fei Wang, Jerry Cheng | 2002-04-30 |
| 6319819 | Process for passivating top interface of damascene-type Cu interconnect lines | Paul R. Besser | 2001-11-20 |
| 6319834 | Method and apparatus for improved planarity metallization by electroplating and CMP | Steven C. Avanzino, Fei Wang | 2001-11-20 |
| 6207577 | Self-aligned dual damascene arrangement for metal interconnection with oxide dielectric layer and low k dielectric constant layer | Fei Wang, Jerry Cheng | 2001-03-27 |
| 6169034 | Chemically removable Cu CMP slurry abrasive | Steven C. Avanzino, Diana M. Schonauer, Kai Yang | 2001-01-02 |
| 6165855 | Antireflective coating used in the fabrication of microcircuit structures in 0.18 micron and smaller technologies | Paul R. Besser, Bhanwar Singh, Susan H. Chen, Carmen Morales | 2000-12-26 |