Joffre F. Bernard has been granted 17 US patents while listed as an inventor at AMD . The first was granted in 2001 and the most recent in February 2013. Joffre F. Bernard ranks #263,971 of 4,157,543 US inventors in our database (top 6.3%). Patent records list Joffre F. Bernard in Santa Clara, CA, US.
Patents per Year Patents granted per year, 2001 to 2013 Bar chart with a peak of 6 patents in 2003. peak 6 2001: 1 patents 2001 2002: 5 patents 2002 2003: 6 patents 2003 2004: 2 patents 2004 2010: 1 patents 2010 2012: 1 patents 2012 2013: 1 patents 2013 Issued Patents All Time
Showing 1–17 of 17 patents
Patent # Title Co-Inventors Date Approx Value ⓘ
8373148 Memory device with improved performance Zhida Lan , Manuj Rathor 2013-02-12
$2,724,000
8093698 Gettering/stop layer for prevention of reduction of insulating oxide in metal-insulator-metal device Manuj Rathor , Matthew S. Buynoski , Steven C. Avanzino , Suzette K. Pangrle 2012-01-10
$945,000
7790497 Method to prevent alloy formation when forming layered metal oxides by metal oxidation Steven C. Avanzino , Jeffrey A. Shields , Suzette K. Pangrle 2010-09-07
$1,192,000
6811671 Method of controlling zinc-doping in a copper-zinc alloy thin film electroplated on a copper surface and a semiconductor device thereby formed Sergey Lopatin , Alexander H. Nickel 2004-11-02
$2,431,000
6770559 Method of forming wiring by implantation of seed layer material Ercan Adem , Fei Wang 2004-08-03
$1,898,000
6630741 Method of reducing electromigration by ordering zinc-doping in an electroplated copper-zinc interconnect and a semiconductor device thereby formed Sergey Lopatin , Paul L. King 2003-10-07
$3,893,000
6624074 Method of fabricating a semiconductor device by calcium doping a copper surface using a chemical solution Sergey Lopatin , Paul L. King 2003-09-23
$3,430,000
6621165 Semiconductor device fabricated by reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface Sergey Lopatin , Paul L. King 2003-09-16
6541286 Imaging of integrated circuit interconnects Minh Quoc Tran 2003-04-01
$3,014,000
6541860 Barrier-to-seed layer alloying in integrated circuit interconnects Christy Mei-Chu Woo , Pin-Chin Connie Wang 2003-04-01
$3,014,000
6515367 Sub-cap and method of manufacture therefor in integrated circuit capping layers Minh Van Ngo , Tim Z. Hossain 2003-02-04
$1,030,000
6479898 Dielectric treatment in integrated circuit interconnects Dawn Hopper , Minh Van Ngo 2002-11-12
$1,765,000
6469387 Semiconductor device formed by calcium doping a copper surface using a chemical solution Sergey Lopatin , Paul L. King 2002-10-22
$2,399,000
6465867 Amorphous and gradated barrier layer for integrated circuit interconnects Sergey Lopatin 2002-10-15
$861,000
6444580 Method of reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface and semiconductor device thereby formed Sergey Lopatin , Paul L. King 2002-09-03
$1,843,000
6406996 Sub-cap and method of manufacture therefor in integrated circuit capping layers Minh Van Ngo , Tim Z. Hossain 2002-06-18
$3,499,000
6309959 Formation of self-aligned passivation for interconnect to minimize electromigration Pin-Chin Connie Wang , Lu You , Amit P. Marathe 2001-10-30
$4,666,000
