Issued Patents All Time
Showing 25 most recent of 34 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7755194 | Composite barrier layers with controlled copper interface surface roughness | Amit P. Marathe, Connie P. Wang, Christy Mei-Chu Woo | 2010-07-13 |
| 7250667 | Selectable open circuit and anti-fuse element | Darin A. Chan, Simon S. Chan | 2007-07-31 |
| 7151020 | Conversion of transition metal to silicide through back end processing in integrated circuit technology | Jeffrey P. Patton, Austin Frenkel, Thorsten Kammler, Robert J. Chiu, Errol Todd Ryan +3 more | 2006-12-19 |
| 7064067 | Reduction of lateral silicide growth in integrated circuit technology | Simon S. Chan, Jeffrey P. Patton, Minh Van Ngo | 2006-06-20 |
| 7033940 | Method of forming composite barrier layers with controlled copper interface surface roughness | Amit P. Marathe, Connie P. Wang, Christy Mei-Chu Woo | 2006-04-25 |
| 7015076 | Selectable open circuit and anti-fuse element, and fabrication method therefor | Darin A. Chan, Simon S. Chan | 2006-03-21 |
| 7005357 | Low stress sidewall spacer in integrated circuit technology | Minh Van Ngo, Simon S. Chan, Paul R. Besser, Errol Todd Ryan, Robert J. Chiu | 2006-02-28 |
| 6784506 | Silicide process using high K-dielectrics | Qi Xiang, Paul R. Besser, Matthew S. Buynoski, John Foster, Eric N. Paton | 2004-08-31 |
| 6764912 | Passivation of nitride spacer | John Foster, Eric N. Paton, Matthew S. Buynoski, Qi Xiang, Paul R. Besser | 2004-07-20 |
| 6717236 | Method of reducing electromigration by forming an electroplated copper-zinc interconnect and a semiconductor device thereby formed | Sergey Lopatin, Alexander H. Nickel | 2004-04-06 |
| 6630741 | Method of reducing electromigration by ordering zinc-doping in an electroplated copper-zinc interconnect and a semiconductor device thereby formed | Sergey Lopatin, Joffre F. Bernard | 2003-10-07 |
| 6624074 | Method of fabricating a semiconductor device by calcium doping a copper surface using a chemical solution | Sergey Lopatin, Joffre F. Bernard | 2003-09-23 |
| 6621165 | Semiconductor device fabricated by reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface | Sergey Lopatin, Joffre F. Bernard | 2003-09-16 |
| 6610181 | Method of controlling the formation of metal layers | Paul R. Besser, Susan Kim | 2003-08-26 |
| 6611576 | Automated control of metal thickness during film deposition | Paul R. Besser | 2003-08-26 |
| 6605513 | Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing | Eric N. Paton, Ercan Adem, Jacques Bertrand, Paul R. Besser, Matthew S. Buynoski +4 more | 2003-08-12 |
| 6602781 | Metal silicide gate transistors | Qi Xiang, Paul R. Besser, Matthew S. Buynoski, John Foster, Eric N. Paton | 2003-08-05 |
| 6562718 | Process for forming fully silicided gates | Qi Xiang, Ercan Adem, Jacques Bertrand, Paul R. Besser, Matthew S. Buynoski +5 more | 2003-05-13 |
| 6559051 | Electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors | Matthew S. Buynoski, Paul R. Besser, Eric N. Paton, Qi Xang | 2003-05-06 |
| 6475874 | Damascene NiSi metal gate high-k transistor | Qi Xiang, Paul R. Besser, Matthew S. Buynoski, John Foster, Eric N. Paton | 2002-11-05 |
| 6469387 | Semiconductor device formed by calcium doping a copper surface using a chemical solution | Sergey Lopatin, Joffre F. Bernard | 2002-10-22 |
| 6465334 | Enhanced electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors | Matthew S. Buynoski, Paul R. Besser, Eric N. Paton, Qi Xiang | 2002-10-15 |
| 6465309 | Silicide gate transistors | Qi Xiang, Paul R. Besser, Matthew S. Buynoski, John Foster, Eric N. Paton | 2002-10-15 |
| 6458679 | Method of making silicide stop layer in a damascene semiconductor structure | Eric N. Paton, Paul R. Besser, Matthew S. Buynoski, Qi Xiang, John Foster | 2002-10-01 |
| 6444580 | Method of reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface and semiconductor device thereby formed | Sergey Lopatin, Joffre F. Bernard | 2002-09-03 |