| 7755194 |
Composite barrier layers with controlled copper interface surface roughness |
Amit P. Marathe, Connie P. Wang, Christy Mei-Chu Woo |
2010-07-13 |
$9,965,000 |
| 7250667 |
Selectable open circuit and anti-fuse element |
Darin A. Chan, Simon S. Chan |
2007-07-31 |
$9,995,000 |
| 7151020 |
Conversion of transition metal to silicide through back end processing in integrated circuit technology |
Jeffrey P. Patton, Austin Frenkel, Thorsten Kammler, Robert J. Chiu, Errol Todd Ryan +3 more |
2006-12-19 |
$26,185,000 |
| 7064067 |
Reduction of lateral silicide growth in integrated circuit technology |
Simon S. Chan, Jeffrey P. Patton, Minh Van Ngo |
2006-06-20 |
$7,818,000 |
| 7033940 |
Method of forming composite barrier layers with controlled copper interface surface roughness |
Amit P. Marathe, Connie P. Wang, Christy Mei-Chu Woo |
2006-04-25 |
$9,950,000 |
| 7015076 |
Selectable open circuit and anti-fuse element, and fabrication method therefor |
Darin A. Chan, Simon S. Chan |
2006-03-21 |
$13,217,000 |
| 7005357 |
Low stress sidewall spacer in integrated circuit technology |
Minh Van Ngo, Simon S. Chan, Paul R. Besser, Errol Todd Ryan, Robert J. Chiu |
2006-02-28 |
$11,043,000 |
| 6784506 |
Silicide process using high K-dielectrics |
Qi Xiang, Paul R. Besser, Matthew S. Buynoski, John Foster, Eric N. Paton |
2004-08-31 |
$2,273,000 |
| 6764912 |
Passivation of nitride spacer |
John Foster, Eric N. Paton, Matthew S. Buynoski, Qi Xiang, Paul R. Besser |
2004-07-20 |
$1,607,000 |
| 6717236 |
Method of reducing electromigration by forming an electroplated copper-zinc interconnect and a semiconductor device thereby formed |
Sergey Lopatin, Alexander H. Nickel |
2004-04-06 |
$3,021,000 |
| 6630741 |
Method of reducing electromigration by ordering zinc-doping in an electroplated copper-zinc interconnect and a semiconductor device thereby formed |
Sergey Lopatin, Joffre F. Bernard |
2003-10-07 |
$3,893,000 |
| 6624074 |
Method of fabricating a semiconductor device by calcium doping a copper surface using a chemical solution |
Sergey Lopatin, Joffre F. Bernard |
2003-09-23 |
$3,430,000 |
| 6621165 |
Semiconductor device fabricated by reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface |
Sergey Lopatin, Joffre F. Bernard |
2003-09-16 |
|
| 6610181 |
Method of controlling the formation of metal layers |
Paul R. Besser, Susan Kim |
2003-08-26 |
$4,773,000 |
| 6611576 |
Automated control of metal thickness during film deposition |
Paul R. Besser |
2003-08-26 |
$4,773,000 |
| 6605513 |
Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing |
Eric N. Paton, Ercan Adem, Jacques Bertrand, Paul R. Besser, Matthew S. Buynoski +4 more |
2003-08-12 |
$3,677,000 |
| 6602781 |
Metal silicide gate transistors |
Qi Xiang, Paul R. Besser, Matthew S. Buynoski, John Foster, Eric N. Paton |
2003-08-05 |
$3,941,000 |
| 6562718 |
Process for forming fully silicided gates |
Qi Xiang, Ercan Adem, Jacques Bertrand, Paul R. Besser, Matthew S. Buynoski +5 more |
2003-05-13 |
$1,759,000 |
| 6559051 |
Electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors |
Matthew S. Buynoski, Paul R. Besser, Eric N. Paton, Qi Xang |
2003-05-06 |
$2,132,000 |
| 6475874 |
Damascene NiSi metal gate high-k transistor |
Qi Xiang, Paul R. Besser, Matthew S. Buynoski, John Foster, Eric N. Paton |
2002-11-05 |
$1,578,000 |
| 6469387 |
Semiconductor device formed by calcium doping a copper surface using a chemical solution |
Sergey Lopatin, Joffre F. Bernard |
2002-10-22 |
$2,399,000 |
| 6465334 |
Enhanced electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors |
Matthew S. Buynoski, Paul R. Besser, Eric N. Paton, Qi Xiang |
2002-10-15 |
$861,000 |
| 6465309 |
Silicide gate transistors |
Qi Xiang, Paul R. Besser, Matthew S. Buynoski, John Foster, Eric N. Paton |
2002-10-15 |
$861,000 |
| 6458679 |
Method of making silicide stop layer in a damascene semiconductor structure |
Eric N. Paton, Paul R. Besser, Matthew S. Buynoski, Qi Xiang, John Foster |
2002-10-01 |
$734,000 |
| 6444580 |
Method of reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface and semiconductor device thereby formed |
Sergey Lopatin, Joffre F. Bernard |
2002-09-03 |
$1,843,000 |
