Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Fully nickel silicided metal gate with shallow junction formed

Fully nickel silicided metal gate with shallow junction formed

US Patent 6555453 · Granted Apr 29, 2003

Estimated economic value: $1,822,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device and manufacturing method of semiconductor device2024
High yield package assembly technique2020
FDSOI semiconductor device with contact enhancement layer and method of manufact2019
Integrated circuits with asymmetric and stacked transistors2016
Semiconductor device having structure with fractional dimension of the minimum d2016
Memory element circuitry with minimum oxide definition width2016
Charge damage protection on an interposer for a stacked die assembly2015
Programmable device with a metal oxide semiconductor field effect transistor2015
Method of fabricating integrated circuit transistors with multipart gate conduct2015
Method of using a PMOS pass gate2015
Integrating optimal planar and three-dimensional semiconductor design layouts2015
Parameterized cell for planar and finFET technology design2014