Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › FDSOI semiconductor device with contact enhancement layer and method of manufacturing

FDSOI semiconductor device with contact enhancement layer and method of manufacturing

US Patent 10347543 · Granted Jul 9, 2019

Estimated economic value: $33,274,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Substrates of semiconductor devices having varying thicknesses of semiconductor 2025
Memory device structures that include a capacitor2025
Bipolar junction transistor arrays2025
Isolation structures of semiconductor devices2025
Antenna structure2025
Antenna structure2025
Local interconnect power rails and upper power rails2025
Self-aligned double patterning with mandrel manipulation2025
Device structures for a high-voltage semiconductor device2025
Planar transistor device comprising at least one layer of a two-dimensional (2D)2025
Cell layouts2025
Compact memory-in-pixel display structure2025