Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Titanium barrier for nickel silicidation of a gate electrode

Titanium barrier for nickel silicidation of a gate electrode

US Patent 6730587 · Granted May 4, 2004

Estimated economic value: $3,882,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Metal oxide varistor with reinforced electrodes2024
Contacts for semiconductor devices2023
Contacts for semiconductor devices2021
Contacts for semiconductor devices2019
FDSOI semiconductor device with contact enhancement layer and method of manufact2019
Insulated thermal cut-off device2017
Method for manufacturing a surface mount device2017
Method for manufacturing a surface mount device2017
Electrically programmable and eraseable memory device2016
Method for achieving very small feature size in semiconductor device by undertak2016
Method for manufacturing a contact for a semiconductor component and related str2015
High ultraviolet light absorbance silicon oxynitride film for improved flash mem2014