Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Nitrogen implant into nitride spacer to reduce nickel silicide formation on spacer

Nitrogen implant into nitride spacer to reduce nickel silicide formation on spacer

US Patent 6602754 · Granted Aug 5, 2003

Estimated economic value: $3,941,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Metal oxide varistor with reinforced electrodes2024
Contacts for semiconductor devices2023
Correlated electron material (CEM) devices with contact region sidewall insulati2021
Contacts for semiconductor devices2021
Formation of correlated electron material (CEM) devices with restored sidewall r2020
Method for fabrication of a CEM device2020
Fabrication of correlated electron material (CEM) devices2020
Method for fabrication of a CEM device2020
Contacts for semiconductor devices2019
FDSOI semiconductor device with contact enhancement layer and method of manufact2019
Insulated thermal cut-off device2017
Method for manufacturing a surface mount device2017