Issued Patents All Time
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9735154 | Semiconductor structure having gap fill dielectric layer disposed between fins | Andy Wei, Dae-Han Choi, Xiang Hu, Mariappan Hariharaputhiran | 2017-08-15 |
| 9608086 | Metal gate structure and method of formation | Andy Wei, Mariappan Hariharaputhiran, Jing Wan | 2017-03-28 |
| 9196499 | Method of forming semiconductor fins | Andy Wei, Dae-Han Choi, Xiang Hu, Mariappan Hariharaputhiran | 2015-11-24 |
| 9159630 | Fin field-effect transistor (FinFET) device formed using a single spacer, double hardmask scheme | Andy Wei, Dae-Han Choi | 2015-10-13 |
| 9147696 | Devices and methods of forming finFETs with self aligned fin formation | Jing Wan, Andy Wei, Lun Zhao, Jin Ping Liu, Tien Ying Luo +3 more | 2015-09-29 |
| 9105478 | Devices and methods of forming fins at tight fin pitches | Andy Wei, Mariappan Hariharaputhiran, Dae-Han Choi, Xiang Hu, Richard J. Carter +1 more | 2015-08-11 |
| 9034767 | Facilitating mask pattern formation | Xiang Hu, Dae-Han Choi, Taejoon Han, Andy Wei | 2015-05-19 |
| 8993445 | Selective removal of gate structure sidewall(s) to facilitate sidewall spacer protection | Dae-Han Choi, Chang Ho Maeng, Wontae Hwang | 2015-03-31 |
| 8969205 | Double patterning via triangular shaped sidewall spacers | Hongliang Shen, Dae-Han Choi, Jung-Yu Hsieh | 2015-03-03 |
| 8936986 | Methods of forming finfet devices with a shared gate structure | Andy Wei | 2015-01-20 |
| 8753940 | Methods of forming isolation structures and fins on a FinFET semiconductor device | Andy Wei | 2014-06-17 |
| 8697501 | Semiconductor device having a gate formed on a uniform surface and method for forming the same | Dae-Han Choi | 2014-04-15 |