Issued Patents All Time
Showing 1–22 of 22 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9698269 | Conformal nitridation of one or more fin-type transistor layers | Wei Tong, Yan Ping SHEN, Feng Zhou, Jun Lian, Haoran SHI +4 more | 2017-07-04 |
| 9312145 | Conformal nitridation of one or more fin-type transistor layers | Wei Tong, Yan Ping SHEN, Feng Zhou, Jun Lian, Haoran SHI +4 more | 2016-04-12 |
| RE45955 | Dual high-K oxides with SiGe channel | Gauri Karve, Daniel Tekleab | 2016-03-29 |
| 9209258 | Depositing an etch stop layer before a dummy cap layer to improve gate performance | Feng Zhou, Haiting Wang, Padmaja NAGAIAH, Jean-Baptiste Laloe, Isabelle Ferain +1 more | 2015-12-08 |
| 9202697 | Forming a gate by depositing a thin barrier layer on a titanium nitride cap | Feng Zhou, Yan Ping SHEN, Haiting Wang, Haoran SHI, Wei Tong +2 more | 2015-12-01 |
| 9147696 | Devices and methods of forming finFETs with self aligned fin formation | Jing Wan, Andy Wei, Lun Zhao, Dae Geun Yang, Jin Ping Liu +3 more | 2015-09-29 |
| 8659087 | Electronic device with a gate electrode having at least two portions | Olubunmi O. Adetutu, Narayanan C. Ramani | 2014-02-25 |
| 8017469 | Dual high-k oxides with sige channel | Gauri Karve, Daniel G. Tekleab | 2011-09-13 |
| 7981808 | Method of forming a gate dielectric by in-situ plasma | Olubunmi O. Adetutu | 2011-07-19 |
| 7829447 | Semiconductor structure pattern formation | Leo Mathew, Rode R. Mora, Tab A. Stephens | 2010-11-09 |
| 7776731 | Method of removing defects from a dielectric material in a semiconductor | Kurt H. Junker, Dina H. Triyoso | 2010-08-17 |
| 7767588 | Method for forming a deposited oxide layer | Rajesh A. Rao | 2010-08-03 |
| 7741183 | Method of forming a gate dielectric | Ning Liu, Mohamed S. Moosa | 2010-06-22 |
| 7700499 | Multilayer silicon nitride deposition for a semiconductor device | Kurt H. Junker, Paul A. Grudowski, Xiang-Zheng Bo | 2010-04-20 |
| 7678698 | Method of forming a semiconductor device with multiple tensile stressor layers | Xiangzheng Bo, Kurt H. Junker, Paul A. Grudowski, Venkat R. Kolagunta | 2010-03-16 |
| 7651935 | Process of forming an electronic device including active regions and gate electrodes of different compositions overlying the active regions | Olubunmi O. Adetutu, Narayanan C. Ramani | 2010-01-26 |
| 7445984 | Method for removing nanoclusters from selected regions | Rajesh A. Rao, Ramachandran Muralidhar, Robert F. Steimle, Sherry G. Straub | 2008-11-04 |
| 7432158 | Method for retaining nanocluster size and electrical characteristics during processing | Rajesh A. Rao, Ramachandran Muralidhar, Robert F. Steimle, Sherry G. Straub | 2008-10-07 |
| 7402472 | Method of making a nitrided gate dielectric | Sangwoo Lim, Paul A. Grudowski, Olubunmi O. Adetutu, Hsing-Huang Tseng | 2008-07-22 |
| 7144825 | Multi-layer dielectric containing diffusion barrier material | Olubunmi O. Adetutu, Hsing-Huang Tseng | 2006-12-05 |
| 7001852 | Method of making a high quality thin dielectric layer | Olubunmi O. Adetutu, Hsing-Huang Tseng | 2006-02-21 |
| 6884685 | Radical oxidation and/or nitridation during metal oxide layer deposition process | Ricardo Garcia, Hsing-Huang Tseng | 2005-04-26 |