Issued Patents All Time
Showing 1–25 of 30 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7704821 | In-situ nitridation of high-k dielectrics | Dina H. Triyoso, Olubunmi O. Adetutu | 2010-04-27 |
| 7402472 | Method of making a nitrided gate dielectric | Sangwoo Lim, Paul A. Grudowski, Tien Ying Luo, Olubunmi O. Adetutu | 2008-07-22 |
| 7235502 | Transitional dielectric layer to improve reliability and performance of high dielectric constant transistors | Sriram Kalpat, Voon-Yew Thean, Olubunmi O. Adetutu | 2007-06-26 |
| 7214590 | Method of forming an electronic device | Sangwoo Lim, Paul A. Grudowski, Mohamad Jahanbani, Choh Fei Yeap | 2007-05-08 |
| 7144825 | Multi-layer dielectric containing diffusion barrier material | Olubunmi O. Adetutu, Tien Ying Luo | 2006-12-05 |
| 7015153 | Method for forming a layer using a purging gas in a semiconductor process | Dina H. Triyoso, Olubunmi O. Adetutu, David C. Gilmer, Darrell Roan, James K. Schaeffer +1 more | 2006-03-21 |
| 7001852 | Method of making a high quality thin dielectric layer | Tien Ying Luo, Olubunmi O. Adetutu | 2006-02-21 |
| 6902969 | Process for forming dual metal gate structures | Olubunmi O. Adetutu, Wei E. Wu | 2005-06-07 |
| 6884685 | Radical oxidation and/or nitridation during metal oxide layer deposition process | Tien Ying Luo, Ricardo Garcia | 2005-04-26 |
| 6787421 | Method for forming a dual gate oxide device using a metal oxide and resulting device | David C. Gilmer, Christopher C. Hobbs | 2004-09-07 |
| 6717226 | Transistor with layered high-K gate dielectric and method therefor | Rama I. Hegde, Joe Mogab, Philip J. Tobin, Chun-Li Liu, Leonard Borucki +3 more | 2004-04-06 |
| 6686282 | Plated metal transistor gate and method of formation | Cindy Reidsema Simpson, Olubunmi O. Adetutu | 2004-02-03 |
| 6297173 | Process for forming a semiconductor device | Philip J. Tobin, Rama I. Hegde, David L. O'Meara, Victor Wang | 2001-10-02 |
| 6146948 | Method for manufacturing a thin oxide for use in semiconductor integrated circuits | Wei E. Wu, Phillip E. Crabtree, Yeong-Jyh T. Lii | 2000-11-14 |
| 6063698 | Method for manufacturing a high dielectric constant gate oxide for use in semiconductor integrated circuits | Philip J. Tobin | 2000-05-16 |
| 5972804 | Process for forming a semiconductor device | Philip J. Tobin, Rama I. Hegde, David L. O'Meara, Victor Wang | 1999-10-26 |
| 5960289 | Method for making a dual-thickness gate oxide layer using a nitride/oxide composite region | Paul G. Y. Tsui, Navakanta Bhat, Ping Chen | 1999-09-28 |
| 5830802 | Process for reducing halogen concentration in a material layer during semiconductor device fabrication | Philip J. Tobin, Bikas Maiti | 1998-11-03 |
| 5731238 | Integrated circuit having a jet vapor deposition silicon nitride film and method of making the same | Craig A. Cavins, Ko-Min Chang | 1998-03-24 |
| 5726087 | Method of formation of semiconductor gate dielectric | Philip J. Tobin | 1998-03-10 |
| 5712177 | Method for forming a reverse dielectric stack | Vidya Kaushik | 1998-01-27 |
| 5712208 | Methods of formation of semiconductor composite gate dielectric having multiple incorporated atomic dopants | Philip J. Tobin, Keith E. Witek | 1998-01-27 |
| 5707889 | Process for forming field isolation | Ting-Chen Hsu, Laureen H. Parker, David G. Kolar, Philip J. Tobin, Lisa K. Garling +1 more | 1998-01-13 |
| 5580815 | Process for forming field isolation and a structure over a semiconductor substrate | Ting-Chen Hsu, Laureen H. Parker, David G. Kolar, Philip J. Tobin, Lisa K. Garling +1 more | 1996-12-03 |
| 5571734 | Method for forming a fluorinated nitrogen containing dielectric | Philip J. Tobin | 1996-11-05 |