Issued Patents All Time
Showing 1–18 of 18 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9725356 | Heatable lens for luminaires, and/or methods of making the same | David P. Maikowski, David D. McLean, Timothy Bourque | 2017-08-08 |
| 8939606 | Heatable lens for luminaires, and/or methods of making the same | David P. Maikowski, David D. McLean, Timothy Bourque | 2015-01-27 |
| 8183104 | Method for dual-channel nanowire FET device | Kerem Akarvardar, Injo Ok | 2012-05-22 |
| 7858482 | Method of forming a semiconductor device using stress memorization | Da Zhang, Srikanth B. Samavedam | 2010-12-28 |
| 6818493 | Selective metal oxide removal performed in a reaction chamber in the absence of RF activation | Philip J. Tobin | 2004-11-16 |
| 6787421 | Method for forming a dual gate oxide device using a metal oxide and resulting device | David C. Gilmer, Hsing-Huang Tseng | 2004-09-07 |
| 6717226 | Transistor with layered high-K gate dielectric and method therefor | Rama I. Hegde, Joe Mogab, Philip J. Tobin, Hsing-Huang Tseng, Chun-Li Liu +3 more | 2004-04-06 |
| 6573160 | Method of recrystallizing an amorphous region of a semiconductor | William J. Taylor, Jr., Marius Orlowski, David C. Gilmer, Prasad Alluri, Michael Rendon +1 more | 2003-06-03 |
| 6514808 | Transistor having a high K dielectric and short gate length and method therefor | Srikanth B. Samavedam, William J. Taylor, Jr. | 2003-02-04 |
| 6465853 | Method for making semiconductor device | Baohong Cheng, Lurae G. Dip | 2002-10-15 |
| 6432779 | Selective removal of a metal oxide dielectric | Rama I. Hegde, Philip J. Tobin | 2002-08-13 |
| 6300202 | Selective removal of a metal oxide dielectric | Rama I. Hegde, Phillip J. Tobin | 2001-10-09 |
| 6294820 | Metallic oxide gate electrode stack having a metallic gate dielectric metallic gate electrode and a metallic arc layer | Kevin Lucas, Olubunmi O. Adetutu, Yolanda Musgrove, Yeong-Jyh T. Lii | 2001-09-25 |
| 6184072 | Process for forming a high-K gate dielectric | Vidya Kaushik, Bich-Yen Nguyen, Olubunmi O. Adetutu | 2001-02-06 |
| 6171910 | Method for forming a semiconductor device | Bikas Maiti, Wei E. Wu | 2001-01-09 |
| 6027961 | CMOS semiconductor devices and method of formation | Bikas Maiti, Philip J. Tobin, C. Joseph Mogab, Larry E. Frisa | 2000-02-22 |
| 6004850 | Tantalum oxide anti-reflective coating (ARC) integrated with a metallic transistor gate electrode and method of formation | Kevin Lucas, Olubunmi O. Adetutu, Yolanda Musgrove, Yeong-Jyh T. Lii | 1999-12-21 |
| 5960270 | Method for forming an MOS transistor having a metallic gate electrode that is formed after the formation of self-aligned source and drain regions | Veena Misra, Suresh Venkatesan, Brad Smith, Jeffrey S. Cope, Earnest B. Wilson | 1999-09-28 |