Issued Patents All Time
Showing 1–25 of 52 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8178401 | Method for fabricating dual-metal gate device | David C. Gilmer, Srikanth B. Samavedam | 2012-05-15 |
| 7868389 | Electronic device comprising a gate electrode including a metal-containing layer having one or more impurities | Olubunmi O. Adetutu, David C. Gilmer | 2011-01-11 |
| 7655550 | Method of making metal gate transistors | James K. Schaeffer, David C. Gilmer, Mark V. Raymond, Srikanth B. Samavedam | 2010-02-02 |
| 7432164 | Semiconductor device comprising a transistor having a counter-doped channel region and method for forming the same | Olubunmi O. Adetutu, David C. Gilmer | 2008-10-07 |
| 7297588 | Electronic device comprising a gate electrode including a metal-containing layer having one or more impurities and a process for forming the same | Olubunmi O. Adetutu, David C. Gilmer | 2007-11-20 |
| 7091568 | Electronic device including dielectric layer, and a process for forming the electronic device | Rama I. Hegde, Alexander Demkov, Dina H. Triyoso | 2006-08-15 |
| 7029980 | Method of manufacturing SOI template layer | Chun-Li Liu, Marius Orlowski, Matthew W. Stoker, Mariam Sadaka, Alexander L. Barr +4 more | 2006-04-18 |
| 7015153 | Method for forming a layer using a purging gas in a semiconductor process | Dina H. Triyoso, Olubunmi O. Adetutu, David C. Gilmer, Darrell Roan, James K. Schaeffer +1 more | 2006-03-21 |
| 6972224 | Method for fabricating dual-metal gate device | David C. Gilmer, Srikanth B. Samavedam | 2005-12-06 |
| 6894353 | Capped dual metal gate transistors for CMOS process and method for making the same | Srikanth B. Samavedam | 2005-05-17 |
| 6818493 | Selective metal oxide removal performed in a reaction chamber in the absence of RF activation | Christopher C. Hobbs | 2004-11-16 |
| 6717226 | Transistor with layered high-K gate dielectric and method therefor | Rama I. Hegde, Joe Mogab, Hsing-Huang Tseng, Chun-Li Liu, Leonard Borucki +3 more | 2004-04-06 |
| 6432779 | Selective removal of a metal oxide dielectric | Christopher C. Hobbs, Rama I. Hegde | 2002-08-13 |
| 6423632 | Semiconductor device and a process for forming the same | Srikanth B. Samavedam, William J. Taylor, Jr. | 2002-07-23 |
| 6383873 | Process for forming a structure | Rama I. Hegde, Amit Sureshkumar Nangia | 2002-05-07 |
| 6376349 | Process for forming a semiconductor device and a conductive structure | Olubunmi O. Adetutu, Bikas Maiti | 2002-04-23 |
| 6362071 | Method for forming a semiconductor device with an opening in a dielectric layer | Bich-Yen Nguyen, William J. Taylor, Jr., David L. O'Meara, Percy V. Gilbert, Yeong-Jyh T. Lii +1 more | 2002-03-26 |
| 6297173 | Process for forming a semiconductor device | Rama I. Hegde, Hsing-Huang Tseng, David L. O'Meara, Victor Wang | 2001-10-02 |
| 6255204 | Method for forming a semiconductor device | Olubunmi O. Adetutu, Rama I. Hegde, Bikas Maiti | 2001-07-03 |
| 6136682 | Method for forming a conductive structure having a composite or amorphous barrier layer | Rama I. Hegde, Dean J. Denning, Jeffrey L. Klein | 2000-10-24 |
| 6084279 | Semiconductor device having a metal containing layer overlying a gate dielectric | Bich-Yen Nguyen, J. Olufemi Olowolafe, Bikas Maiti, Olubunmi O. Adetutu | 2000-07-04 |
| 6063698 | Method for manufacturing a high dielectric constant gate oxide for use in semiconductor integrated circuits | Hsing-Huang Tseng | 2000-05-16 |
| 6027961 | CMOS semiconductor devices and method of formation | Bikas Maiti, C. Joseph Mogab, Christopher C. Hobbs, Larry E. Frisa | 2000-02-22 |
| 6020024 | Method for forming high dielectric constant metal oxides | Bikas Maiti, Rama I. Hegde, Jesus Cuellar | 2000-02-01 |
| 5972804 | Process for forming a semiconductor device | Rama I. Hegde, Hsing-Huang Tseng, David L. O'Meara, Victor Wang | 1999-10-26 |