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Method for processing semiconductor wafers in an enclosure with a treated interior surface |
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Method and apparatus for forming a layer on a substrate |
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2002-12-31 |
| 6476623 |
Percent backsputtering as a control parameter for metallization |
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Inert plasma gas surface cleaning process performed insitu with physical vapor deposition (PVD) of a layer of material |
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Method and apparatus for forming a layer on a substrate |
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| 5893752 |
Process for forming a semiconductor device |
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