Issued Patents All Time
Showing 1–23 of 23 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11037937 | SRAM bit cells formed with dummy structures | Meixiong Zhao, Randy W. Mann, Sanjay R. Parihar, Anton V. Tokranov, Hong Yu +1 more | 2021-06-15 |
| 10957701 | Fin-based anti-fuse device for integrated circuit (IC) products, methods of making such an anti-fuse device and IC products comprising such an anti-fuse device | Meixiong Zhao, Guoxiang Ning | 2021-03-23 |
| 10910276 | STI structure with liner along lower portion of longitudinal sides of active region, and related FET and method | Yongjun Shi, Xinyuan Dou, Chun Yu Wong, Baofu Zhu | 2021-02-02 |
| 10804170 | Device/health of line (HOL) aware eBeam based overlay (EBO OVL) structure | Guoxiang Ning, Erfeng Ding, Dongsuk Park, Xiaoxiao Zhang, Lan Yang | 2020-10-13 |
| 10580857 | Method to form high performance fin profile for 12LP and above | Yanzhen Wang, Xinyuan Dou, Sipeng Gu | 2020-03-03 |
| 10423078 | FinFET cut isolation opening revision to compensate for overlay inaccuracy | Erfeng Ding, Guoxiang Ning | 2019-09-24 |
| 10324381 | FinFET cut isolation opening revision to compensate for overlay inaccuracy | Erfeng Ding, Guoxiang Ning | 2019-06-18 |
| 9653583 | Methods of forming diffusion breaks on integrated circuit products comprised of finFET devices | Wei Zhao, Haiting Wang, Zhenyu Hu, Min-hwa Chi | 2017-05-16 |
| 9455198 | Methods of removing fins so as to form isolation structures on products that include FinFET semiconductor devices | Hong Yu, Zhenyu Hu, Lun Zhao, Richard J. Carter, Xusheng Wu | 2016-09-27 |
| 9406676 | Method for forming single diffusion breaks between finFET devices and the resulting devices | Hong Yu, Zhenyu Hu, Jin Ping Liu | 2016-08-02 |
| 9385192 | Shallow trench isolation integration methods and devices formed thereby | Kyutae Na, Sandeep Gaan, Hsin-Neng Tai, Weihua Tong, Sang Cheol Han +6 more | 2016-07-05 |
| 9373535 | T-shaped fin isolation region and methods of fabrication | Zhenyu Hu, Jin Ping Liu | 2016-06-21 |
| 9368496 | Method for uniform recess depth and fill in single diffusion break for fin-type process and resulting devices | Hong Yu | 2016-06-14 |
| 9362176 | Uniform exposed raised structures for non-planar semiconductor devices | Hong Yu, Zhao Lun, Zhenyu Hu, Richard J. Carter | 2016-06-07 |
| 9263516 | Product comprised of FinFET devices with single diffusion break isolation structures | Xusheng Wu, Changyong Xiao, Wanxun He | 2016-02-16 |
| 9219002 | Overlay performance for a fin field effect transistor device | Zhenyu Hu, Andy Wei, Qi Zhang, Richard J. Carter, Daniel T. Pham +1 more | 2015-12-22 |
| 9171752 | Product comprised of FinFET devices with single diffusion break isolation structures, and methods of making such a product | Xusheng Wu, Changyong Xiao, Wanxun He | 2015-10-27 |
| 9159667 | Methods of forming an e-fuse for an integrated circuit product and the resulting e-fuse structure | Xiaoqiang Zhang, O Sung Kwon, Jianghu Yan, Wen-Hu Hung, Roderick Miller | 2015-10-13 |
| 9123771 | Shallow trench isolation integration methods and devices formed thereby | Kyutae Na, Sandeep Gaan, Hsin-Neng Tai, Weihua Tong, Sang Cheol Han +6 more | 2015-09-01 |
| 9123772 | FinFET fabrication method | Xusheng Wu, Wanxun He | 2015-09-01 |
| 9123773 | T-shaped single diffusion barrier with single mask approach process flow | FangYu Wu, Haigou Huang, Xusheng Wu, Changyong Xiao, Wanxum He | 2015-09-01 |
| 9087870 | Integrated circuits including FINFET devices with shallow trench isolation that includes a thermal oxide layer and methods for making the same | Wei Tong, Huang Liu, Jin Ping Liu, Seung Kim | 2015-07-21 |
| 8969205 | Double patterning via triangular shaped sidewall spacers | Dae-Han Choi, Dae Geun Yang, Jung-Yu Hsieh | 2015-03-03 |