Issued Patents All Time
Showing 1–20 of 20 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12068163 | Method for forming semiconductor structure | Hua Wang, Yihui Lin, Qin Zhang, Yi-Chun Lu, Xiang Hu +2 more | 2024-08-20 |
| 11610980 | Method for processing a FinFET device | Boon Teik Chan, Jie Chen | 2023-03-21 |
| 10847425 | Semiconductor devices and fabrication methods thereof | Yi-Chun Lu, Yihui Lin, Qin Zhang, Hua Wang, Xiang Hu +2 more | 2020-11-24 |
| 10032910 | FinFET devices having asymmetrical epitaxially-grown source and drain regions and methods of forming the same | Xusheng Wu, Min-hwa Chi | 2018-07-24 |
| 9793358 | Non-planar semiconductor device with multiple-head epitaxial structure on fin | Xusheng Wu, Xiang Hu, Wanxun He | 2017-10-17 |
| 9508794 | Mixed N/P-type fin semiconductor structure with epitaxial materials having increased surface area through multiple epitaxial heads | Xusheng Wu, Xiang Hu, Wanxun He | 2016-11-29 |
| 9419015 | Method for integrating thin-film transistors on an isolation region in an integrated circuit and resulting device | Xusheng Wu, Min-hwa Chi | 2016-08-16 |
| 9385192 | Shallow trench isolation integration methods and devices formed thereby | Hongliang Shen, Kyutae Na, Sandeep Gaan, Hsin-Neng Tai, Weihua Tong +6 more | 2016-07-05 |
| 9362284 | Threshold voltage control for mixed-type non-planar semiconductor devices | Mitsuhiro Togo, Yiqun Liu, Dina H. Triyoso, Rohit Pal | 2016-06-07 |
| 9299608 | T-shaped contacts for semiconductor device | Xusheng Wu, Min-hwa Chi | 2016-03-29 |
| 9275906 | Method for increasing a surface area of epitaxial structures in a mixed N/P type fin semiconductor structure by forming multiple epitaxial heads | Xusheng Wu, Xiang Hu, Wanxun He | 2016-03-01 |
| 9263516 | Product comprised of FinFET devices with single diffusion break isolation structures | Xusheng Wu, Wanxun He, Hongliang Shen | 2016-02-16 |
| 9209186 | Threshold voltage control for mixed-type non-planar semiconductor devices | Mitsuhiro Togo, Yiqun Liu, Dina H. Triyoso, Rohit Pal | 2015-12-08 |
| 9171752 | Product comprised of FinFET devices with single diffusion break isolation structures, and methods of making such a product | Xusheng Wu, Wanxun He, Hongliang Shen | 2015-10-27 |
| 9159567 | Replacement low-K spacer | Hoong Shing Wong, Deepasree Konduparthi, Rohit Pal | 2015-10-13 |
| 9123771 | Shallow trench isolation integration methods and devices formed thereby | Hongliang Shen, Kyutae Na, Sandeep Gaan, Hsin-Neng Tai, Weihua Tong +6 more | 2015-09-01 |
| 9123773 | T-shaped single diffusion barrier with single mask approach process flow | Hongliang Shen, FangYu Wu, Haigou Huang, Xusheng Wu, Wanxum He | 2015-09-01 |
| 9123783 | Integrated circuits and methods of forming integrated circuits with interlayer dielectric protection | Xin-Yong WANG, Yue Hu, Yong Meng Lee, Meng Luo, Jialin Weng +2 more | 2015-09-01 |
| 9087720 | Methods for forming FinFETs with reduced series resistance | Xusheng Wu, Manfred Eller, Wanxun He, Jie Chen | 2015-07-21 |
| 8617996 | Fin removal method | Min-hwa Chi, Honglian Shen | 2013-12-31 |