HW

Hoong Shing Wong

Globalfoundries: 10 patents #365 of 4,424Top 9%
TSMC: 1 patents #8,466 of 12,232Top 70%
Lam Research: 1 patents #1,364 of 2,128Top 65%
📍 Clifton Park, NY: #253 of 1,126 inventorsTop 25%
🗺 New York: #13,384 of 115,490 inventorsTop 15%
Overall (All Time): #450,878 of 4,157,543Top 15%
11
Patents All Time

Issued Patents All Time

Showing 1–11 of 11 patents

Patent #TitleCo-InventorsDate
11342188 Methods for doping high-k metal gates for tuning threshold voltages Kuo-Feng Yu, Chun Hsiung Tsai, Jian-Hao Chen, Chih-Yu Hsu 2022-05-24
10128333 FinFET with isolated source and drain Min-hwa Chi, Tae Hoon Kim 2018-11-13
9337340 FinFET with active region shaped structures and channel separation Min-hwa Chi 2016-05-10
9252238 Semiconductor structures with coplanar recessed gate layers and fabrication methods Kristina Trevino, Yuan-Hung Liu, Gabriel Padron Wells, Xing Zhang, Chang Ho Maeng +4 more 2016-02-02
9159567 Replacement low-K spacer Changyong Xiao, Deepasree Konduparthi, Rohit Pal 2015-10-13
9153496 Methods of manufacturing integrated circuits having FinFET structures with epitaxially formed source/drain regions Min-hwa Chi 2015-10-06
9147680 Integrated circuits having replacement metal gates with improved threshold voltage performance and methods for fabricating the same Kristina Trevino, Yuan-Hung Lin, Gabriel Padron Wells, Chang Ho Maeng, Taejoon Han 2015-09-29
9006066 FinFET with active region shaped structures and channel separation Min-hwa Chi 2015-04-14
8946029 Methods of manufacturing integrated circuits having FinFET structures with epitaxially formed source/drain regions Min-hwa Chi 2015-02-03
8940650 Methods for fabricating integrated circuits utilizing silicon nitride layers Huy Cao, Huang Liu, Songkram Srivathanakul, Sandeep Gaan 2015-01-27
8906768 Wrap around stressor formation Min-hwa Chi 2014-12-09