Issued Patents All Time
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11756786 | Forming high carbon content flowable dielectric film with low processing damage | Benjamin D. Briggs, Donald F. Canaperi, Thomas J. Haigh, Jr., Son V. Nguyen, Hosadurga Shobha +2 more | 2023-09-12 |
| 10964599 | Multi-step insulator formation in trenches to avoid seams in insulators | Asli Sirman, Jiehui Shu, Chih-Chiang Chang, Haigou Huang, Jinping Liu | 2021-03-30 |
| 10930549 | Cap structure | Jinsheng Gao, Daniel Jaeger, Chih-Chiang Chang, Michael V. Aquilino, Patrick Carpenter +3 more | 2021-02-23 |
| 10460986 | Cap structure | Jinsheng Gao, Daniel Jaeger, Chih-Chiang Chang, Michael V. Aquilino, Patrick Carpenter +3 more | 2019-10-29 |
| 10453751 | Tone inversion method and structure for selective contact via patterning | Xiaofeng Qiu, Michael V. Aquilino, Patrick Carpenter, Jessica Dechene, Ming Hao Tang +1 more | 2019-10-22 |
| 10431500 | Multi-step insulator formation in trenches to avoid seams in insulators | Asli Sirman, Jiehui Shu, Chih-Chiang Chang, Haigou Huang, Jinping Liu | 2019-10-01 |
| 10325819 | Methods, apparatus and system for providing a pre-RMG replacement metal contact for a finFET device | Jinsheng Gao, Daniel Jaeger, Michael V. Aquilino, Patrick Carpenter, Jessica Dechene +2 more | 2019-06-18 |
| 10269654 | Methods, apparatus and system for replacement contact for a finFET device | Jinsheng Gao, Daniel Jaeger, Michael V. Aquilino, Patrick Carpenter, Jessica Dechene +2 more | 2019-04-23 |
| 10256089 | Replacement contact cuts with an encapsulated low-K dielectric | Haigou Huang, Jinsheng Gao, Tai Fong Chao | 2019-04-09 |
| 10056458 | Siloxane and organic-based MOL contact patterning | Chang Ho Maeng, Andy Wei, Anthony Ozzello, Bharat Krishnan, Guillaume Bouche +9 more | 2018-08-21 |
| 10043753 | Airgaps to isolate metallization features | Zhiguo Sun, Joseph F. Shepard, Jr., Moosung Chae | 2018-08-07 |
| 9991363 | Contact etch stop layer with sacrificial polysilicon layer | Haigou Huang, Jinsheng Gao, Haifeng Sheng, Jinping Liu, Hui Zang | 2018-06-05 |
| 9793169 | Methods for forming mask layers using a flowable carbon-containing silicon dioxide material | Huang Liu, Guillaume Bouche, Songkram Srivathanakul | 2017-10-17 |
| 9620381 | Facilitating etch processing of a thin film via partial implantation thereof | Suraj K. Patil, Hui Zhan, Huang Liu | 2017-04-11 |
| 9589829 | FinFET device including silicon oxycarbon isolation structure | Daniel Jaeger, Guillaume Bouche | 2017-03-07 |
| 9455204 | 10 nm alternative N/P doped fin for SSRW scheme | Jinping Liu, Guillaume Bouche, Huang Liu | 2016-09-27 |
| 9390979 | Opposite polarity borderless replacement metal contact scheme | Andy Wei, Guillaume Bouche, Jing Wan | 2016-07-12 |
| 9330982 | Semiconductor device with diffusion barrier film and method of manufacturing the same | Songkram Srivathanakul, Jinping Liu, In-Soo Jung | 2016-05-03 |
| 9318440 | Formation of carbon-rich contact liner material | Songkram Srivathanakul, Huang Liu, Garo Derderian, Boaz Alperson | 2016-04-19 |
| 9130019 | Formation of carbon-rich contact liner material | Songkram Srivathanakul, Huang Liu, Garo Derderian, Boaz Alperson | 2015-09-08 |
| 8940650 | Methods for fabricating integrated circuits utilizing silicon nitride layers | Huang Liu, Hoong Shing Wong, Songkram Srivathanakul, Sandeep Gaan | 2015-01-27 |