Issued Patents All Time
Showing 1–25 of 30 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12374896 | Passivity-based dual-mode integrated control method for grid-connected inverter | Ming Li, Yongtao Mao, Enjun Liu, Xing WANG | 2025-07-29 |
| 12206339 | Method for hybrid control of grid-connected inverter based on time sharing of a voltage source and a current source | Feng Han, Xiangdui Zhan, Xinxin Fu, Jilei Wang | 2025-01-21 |
| 12149184 | Multi-mode control method for grid-connected inverter | Feng Han, Xiangdui Zhan, Yu Xiao, Xinxin Fu | 2024-11-19 |
| 12002679 | High step coverage tungsten deposition | Michael J. Bowes, Tsung-Han Yang, Anand Chandrashekar | 2024-06-04 |
| 11979025 | Dual-mode combined control method for multi-inverter system based on double split transformer | Ming Li, Zixuan Guo, Jilei Wang, Hailong Pan, Yang Wang +2 more | 2024-05-07 |
| 11967825 | Stability control method for virtual synchronous generator in strong grid based on inductance-current differential feedback | Zixuan Guo, Shaolong CHEN, Yang Wang, Hailong Pan, Qian Gao +1 more | 2024-04-23 |
| 11831264 | Power supply system of motor control module and vehicle | Yuan Zhou, Bucheng Ji, Zhengqiang Zhang | 2023-11-28 |
| 11525857 | Method for characterizing fluctuation induced by single particle irradiation in a device and application thereof | Xia An, Zhexuan Ren, Gensong Li, Ru Huang | 2022-12-13 |
| 10700173 | FinFET device with a wrap-around silicide source/drain contact structure | Yi Qi, Hsien-Ching Lo, Hong Yu, Yanping Shen, Wei Hong +4 more | 2020-06-30 |
| 10643900 | Method to reduce FinFET short channel gate height | Xinyuan Dou, Hong Yu, Zhenyu Hu | 2020-05-05 |
| 10325824 | Methods, apparatus and system for threshold voltage control in FinFET devices | Mitsuhiro Togo, Ram Asra, Palanivel Balasubramaniam | 2019-06-18 |
| 10083873 | Semiconductor structure with uniform gate heights | Xinyuan Dou, Hong Yu, Zhenyu Hu | 2018-09-25 |
| 10043713 | Method to reduce FinFET short channel gate height | Xinyuan Dou, Hong Yu, Zhenyu Hu | 2018-08-07 |
| 9899910 | Bridgeless PFC power converter with reduced EMI noise | Hua XU, Wei Li, Hui Zhang, Yi Zhang | 2018-02-20 |
| 9673730 | Double auxiliary resonant commutated pole three-phase soft-switching inverter circuit and modulation method | Huaguang Zhang, Enhui Chu, Bingyi Zhang, Xiuchong Liu, Shijie Yan +2 more | 2017-06-06 |
| 9508852 | Radiation-hardened-by-design (RHBD) multi-gate device | Ru Huang, Weikang Wu, Xia An, Fei Tan, Liangxi Huang +1 more | 2016-11-29 |
| 9484208 | Preparation method of a germanium-based schottky junction | Ru Huang, Meng Lin, Zhiqiang Li, Xia An, Ming Li +3 more | 2016-11-01 |
| 9312126 | Method for processing gate dielectric layer deposited on germanium-based or group III-V compound-based substrate | Ru Huang, Meng Lin, Xia An, Ming Li, Quanxin Yun +3 more | 2016-04-12 |
| 9255960 | Testing structure and method for interface trap density of gate oxide | Yandong He, GangGang Zhang, Xiaoyan Liu | 2016-02-09 |
| 9252238 | Semiconductor structures with coplanar recessed gate layers and fabrication methods | Kristina Trevino, Yuan-Hung Liu, Gabriel Padron Wells, Hoong Shing Wong, Chang Ho Maeng +4 more | 2016-02-02 |
| 9147597 | Method for isolating active regions in germanium-based MOS device | Ming Li, Min Li, Ru Huang, Xia An | 2015-09-29 |
| 9086448 | Method for predicting reliable lifetime of SOI mosfet device | Ru Huang, Dong Yang, Xia An | 2015-07-21 |
| 8987083 | Uniform gate height for semiconductor structure with N and P type fins | Zhenyu Hu, Zhao Lun | 2015-03-24 |
| 8877594 | CMOS device for reducing radiation-induced charge collection and method for fabricating the same | Ru Huang, Fei Tan, Xia An, Qianqian Huang, Dong Yang | 2014-11-04 |
| 8865543 | Ge-based NMOS device and method for fabricating the same | Ru Huang, Zhiqiang Li, Xia An, Yue Guo | 2014-10-21 |