Issued Patents All Time
Showing 25 most recent of 28 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12356704 | Field effect transistor with contact via structures that are laterally spaced by a sub-lithographic distance and method of making the same | Kouta Onogi, Kazutaka Yoshizawa, Hokuto KODATE, Takahito Fujita | 2025-07-08 |
| 12279445 | Field effect transistors with gate fins and method of making the same | Srinivas Pulugurtha, Yanli Zhang, Johann Alsmeier | 2025-04-15 |
| 12015084 | Field effect transistors with gate fins and method of making the same | Takashi Kobayashi, Sudarshan Narayanan | 2024-06-18 |
| 11978774 | High voltage field effect transistor with vertical current paths and method of making the same | — | 2024-05-07 |
| 11967626 | Field effect transistors with gate fins and method of making the same | Takashi Kobayashi, Sudarshan Narayanan | 2024-04-23 |
| 11837640 | Transistors with stepped contact via structures and methods of forming the same | Hiroshi Nakatsuji | 2023-12-05 |
| 11626397 | Gate material-based capacitor and resistor structures and methods of forming the same | Hokuto KODATE, Hiroyuki Ogawa, Dai Iwata | 2023-04-11 |
| 11575015 | High voltage field effect transistors with self-aligned silicide contacts and methods for making the same | Jun Akaiwa, Hiroshi Nakatsuji, Masashi Ishida | 2023-02-07 |
| 11450768 | High voltage field effect transistor with vertical current paths and method of making the same | — | 2022-09-20 |
| 11322597 | Gate material-based capacitor and resistor structures and methods of forming the same | Hokuto KODATE, Hiroyuki Ogawa, Dai Iwata | 2022-05-03 |
| 10325824 | Methods, apparatus and system for threshold voltage control in FinFET devices | Ram Asra, Xing Zhang, Palanivel Balasubramaniam | 2019-06-18 |
| 9698241 | Integrated circuits with replacement metal gates and methods for fabricating the same | Suraj K. Patil, Min-hwa Chi | 2017-07-04 |
| 9679990 | Semiconductor structure(s) with extended source/drain channel interfaces and methods of fabrication | Edmund K. Banghart, Shesh Mani Pandey | 2017-06-13 |
| 9508602 | Temperature-controlled implanting of a diffusion-suppressing dopant in a semiconductor structure | — | 2016-11-29 |
| 9419103 | Stress modulation in field effect transistors in reducing contact resistance and increasing charge carrier mobility | — | 2016-08-16 |
| 9362284 | Threshold voltage control for mixed-type non-planar semiconductor devices | Changyong Xiao, Yiqun Liu, Dina H. Triyoso, Rohit Pal | 2016-06-07 |
| 9209186 | Threshold voltage control for mixed-type non-planar semiconductor devices | Changyong Xiao, Yiqun Liu, Dina H. Triyoso, Rohit Pal | 2015-12-08 |
| 9202695 | Method for providing a gate metal layer of a transistor device and associated transistor | — | 2015-12-01 |
| 7442632 | Semiconductor device n-channel type MOS transistor with gate electrode layer featuring small average polycrystalline silicon grain size | Takayuki Suzuki | 2008-10-28 |
| 7355256 | MOS Devices with different gate lengths and different gate polysilicon grain sizes | Eiji Hasegawa | 2008-04-08 |
| 6585594 | Storage medium storing display control program, entertainment apparatus, and display control program | Kazuhito Miyaki | 2003-07-01 |
| 6459126 | Semiconductor device including a MIS transistor | Tohru Mogami, Koji Watanabe, Toyoji Yamamoto, Nobuyuki Ikarashi, Kazutoshi Shiba +2 more | 2002-10-01 |
| 6300211 | Highly reliable trench capacitor type memory cell | — | 2001-10-09 |
| 6249017 | Highly reliable trench capacitor type memory cell | — | 2001-06-19 |
| 6159809 | Method for manufacturing surface channel type P-channel MOS transistor while suppressing P-type impurity penetration | — | 2000-12-12 |