EB

Edmund K. Banghart

Globalfoundries: 6 patents #578 of 4,424Top 15%
Eastman Kodak: 5 patents #2,059 of 8,114Top 30%
GU Globalfoundries U.S.: 2 patents #206 of 665Top 35%
TI Truesense Imaging: 2 patents #14 of 21Top 70%
ON onsemi: 1 patents #1,116 of 1,901Top 60%
📍 Pittsford, NY: #123 of 976 inventorsTop 15%
🗺 New York: #9,079 of 115,490 inventorsTop 8%
Overall (All Time): #293,503 of 4,157,543Top 8%
16
Patents All Time

Issued Patents All Time

Showing 1–16 of 16 patents

Patent #TitleCo-InventorsDate
11538815 Non-volatile memory cell arrays with a sectioned active region and methods of manufacturing thereof Oscar D. Restrepo, William J. Taylor, Jr. 2022-12-27
11094805 Lateral heterojunction bipolar transistors with asymmetric junctions Alexander M. Derrickson, Alexander L. Martin, Ryan Sporer, Jagar Singh, Katherina Babich +1 more 2021-08-17
10522679 Selective shallow trench isolation (STI) fill for stress engineering in semiconductor structures Ashish Jha, Hong Yu, Xinyuan Dou, Xusheng Wu, Dongil Choi +1 more 2019-12-31
10347740 Fin structures and multi-Vt scheme based on tapered fin and method to form Xusheng Wu, Min-hwa Chi 2019-07-09
9679990 Semiconductor structure(s) with extended source/drain channel interfaces and methods of fabrication Mitsuhiro Togo, Shesh Mani Pandey 2017-06-13
9583625 Fin structures and multi-Vt scheme based on tapered fin and method to form Xusheng Wu, Min-hwa Chi 2017-02-28
9570291 Semiconductor substrates and methods for processing semiconductor substrates Shishir Ray, Sandeep Gaan, Sheldon Meyers, Nisha Pillai, Kyle Jung 2017-02-14
9087860 Fabricating fin-type field effect transistor with punch-through stop region Yanxiang Liu, Shesh Mani Pandey 2015-07-21
8994139 Lateral overflow drain and channel stop regions in image sensors Eric G. Stevens, Hung Q. Doan 2015-03-31
8772891 Lateral overflow drain and channel stop regions in image sensors Eric G. Stevens, Hung Q. Doan 2014-07-08
8329499 Method of forming lateral overflow drain and channel stop regions in image sensors Eric G. Stevens, Hung Q. Doan 2012-12-11
6624453 Lateral overflow drain, anti-blooming structure for CCD devices having improved breakdown voltage Eric G. Stevens 2003-09-23
5804465 Compact isolation and antiblooming structure for full-frame CCD image sensors operated in the accumulation mode Constantine N. Anagnostopoulos 1998-09-08
5714776 Compact isolation and antiblooming structure for full-frame CCD image sensors operated in the accumlation mode Constantine N. Anagnostopoulos 1998-02-03
5448089 Charge-coupled device having an improved charge-transfer efficiency over a broad temperature range Edward T. Nelson, William DesJardin, James P. Lavine, Bruce C. Burkey 1995-09-05
5227313 Process for making backside illuminated image sensors Ronald M. Gluck, Madhav Mehra 1993-07-13