Issued Patents All Time
Showing 1–25 of 30 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12363934 | Gate oxide formation for fin field-effect transistor | — | 2025-07-15 |
| 11404415 | Stacked-gate transistors | Wenjun Li, Brian J. Greene, Tao Chu | 2022-08-02 |
| 11315835 | Methods of forming an IC product comprising transistor devices with different threshold voltage levels | Wei Hong, Hong Yu, Tao Chu | 2022-04-26 |
| 11264477 | Field-effect transistors with independently-tuned threshold voltages | Xiaoli He, Tao Chu | 2022-03-01 |
| 10964598 | Methods of forming source/drain regions of a FinFET device and the resulting structures | Tao Chu, Man Gu | 2021-03-30 |
| 10553707 | FinFETs having gates parallel to fins | Yanping Shen, Hui Zang, Manoj Joshi, Jae Gon Lee, Hsien-Ching Lo +1 more | 2020-02-04 |
| 10483377 | Devices and methods of forming unmerged epitaxy for FinFet device | Hui Zang | 2019-11-19 |
| 10276560 | Passive device structure and methods of making thereof | Hui Zang | 2019-04-30 |
| 10177151 | Single-diffusion break structure for fin-type field effect transistors | Yanzhen Wang, Hui Zang | 2019-01-08 |
| 10096488 | FinFET semiconductor structures and methods of fabricating same | Michael Ganz, Johannes M. van Meer, Sruthi Muralidharan | 2018-10-09 |
| 9853128 | Devices and methods of forming unmerged epitaxy for FinFET device | Hui Zang | 2017-12-26 |
| 9812336 | FinFET semiconductor structures and methods of fabricating same | Michael Ganz, Johannes M. van Meer, Sruthi Muralidharan | 2017-11-07 |
| 9761594 | Hardmask for a halo/extension implant of a static random access memory (SRAM) layout | Xusheng Wu, Randy W. Mann | 2017-09-12 |
| 9735152 | Non-planar structure with extended exposed raised structures and same-level gate and spacers | Hui Zang | 2017-08-15 |
| 9691787 | Co-fabricated bulk devices and semiconductor-on-insulator devices | Hui Zang | 2017-06-27 |
| 9576856 | Fabrication of nanowire field effect transistor structures | Hui Zang | 2017-02-21 |
| 9570586 | Fabrication methods facilitating integration of different device architectures | Hong Yu, Seong Yeol Mun, Lun Zhao, Richard J. Carter, Manfred Eller | 2017-02-14 |
| 9564484 | Metal-insulator-metal back end of line capacitor structures | Hui Zang | 2017-02-07 |
| 9496280 | Semiconductor structure having logic region and analog region | Hui Zang, Xusheng Wu | 2016-11-15 |
| 9431396 | Single diffusion break with improved isolation and process window and reduced cost | Hui Zang | 2016-08-30 |
| 9425129 | Methods for fabricating conductive vias of circuit structures | Hui Zang, Dingyou Zhang | 2016-08-23 |
| 9425252 | Process for single diffusion break with simplified process | Hui Zang | 2016-08-23 |
| 9337197 | Semiconductor structure having FinFET ultra thin body and methods of fabrication thereof | Hui Zang | 2016-05-10 |
| 9331202 | Replacement gate structure on FinFET devices with reduced size fin in the channel region | Hui Zang | 2016-05-03 |
| 9324713 | Eliminating field oxide loss prior to FinFET source/drain epitaxial growth | Hong Yu, Hui Zang, Lun Zhao | 2016-04-26 |