FY

Frank Bin Yang

Globalfoundries: 9 patents #393 of 4,424Top 9%
AM AMD: 6 patents #1,863 of 9,279Top 25%
IBM: 1 patents #44,794 of 70,183Top 65%
Overall (All Time): #325,152 of 4,157,543Top 8%
15
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
8293609 Method of manufacturing a transistor device having asymmetric embedded strain elements Rohit Pal, Michael Hargrove 2012-10-23
8217463 Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices fabricated from such methods Rohit Pal, Michael Hargrove 2012-07-10
8193592 MOSFET with asymmetrical extension implant Andrew Waite, Scott Luning 2012-06-05
8148750 Transistor device having asymmetric embedded strain elements and related manufacturing method Rohit Pal, Michael Hargrove 2012-04-03
8076209 Methods for fabricating MOS devices having highly stressed channels Rohit Pal, Michael Hargrove 2011-12-13
8026539 Metal oxide semiconductor devices having doped silicon-compromising capping layers and methods for fabricating the same Michael Hargrove, Rohit Pal 2011-09-27
7994014 Semiconductor devices having faceted silicide contacts, and related fabrication methods Rohit Pal, Michael Hargrove 2011-08-09
7989298 Transistor having V-shaped embedded stressor Kevin K. Chan, Brian J. Greene, Judson R. Holt, Jeffrey B. Johnson, Thomas S. Kanarsky +4 more 2011-08-02
7960229 Metal oxide semiconductor transistor with reduced gate height, and related fabrication methods Rohit Pal, Scott Luning 2011-06-14
7939852 Transistor device having asymmetric embedded strain elements and related manufacturing method Rohit Pal, Michael Hargrove 2011-05-10
7932143 Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices fabricated from such methods Rohit Pal, Michael Hargrove 2011-04-26
7829401 MOSFET with asymmetrical extension implant Andrew Waite, Scott Luning 2010-11-09
7767534 Methods for fabricating MOS devices having highly stressed channels Rohit Pal, Michael Hargrove 2010-08-03
7670934 Methods for fabricating MOS devices having epitaxially grown stress-inducing source and drain regions Rohit Pal 2010-03-02
7632727 Method of forming stepped recesses for embedded strain elements in a semiconductor device Rohit Pal, Michael Hargrove 2009-12-15