Issued Patents All Time
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8643119 | Substantially L-shaped silicide for contact | Zhijiong Luo, Huilong Zhu, Yung Fu Chong, Kern Rim, Nivo Rovedo | 2014-02-04 |
| 8268698 | Formation of improved SOI substrates using bulk semiconductor wafers | William K. Henson, Dureseti Chidambarrao, Kern Rim, Hsingjen Wann | 2012-09-18 |
| 8039331 | Opto-thermal annealing methods for forming metal gate and fully silicided gate-field effect transistors | Scott D. Allen, Cyril Cabral, Jr., Kevin K. Dezfulian, Sunfei Fang, Brian J. Greene +6 more | 2011-10-18 |
| 7932158 | Formation of improved SOI substrates using bulk semiconductor wafers | William K. Henson, Dureseti Chidambarrao, Kern Rim, Hsingjen Wann | 2011-04-26 |
| 7785950 | Dual stress memory technique method and related structure | Sunfei Fang, Jun Jung Kim, Zhijiong Luo, Nivo Rovedo, Young Way Teh | 2010-08-31 |
| 7772676 | Strained semiconductor device and method of making same | Jin-Ping Han, Judson R. Holt | 2010-08-10 |
| 7452784 | Formation of improved SOI substrates using bulk semiconductor wafers | William K. Henson, Dureseti Chidambarrao, Kern Rim, Hsingjen Wann | 2008-11-18 |
| 7442619 | Method of forming substantially L-shaped silicide contact for a semiconductor device | Zhijiong Luo, Huilong Zhu, Yung Fu Chong, Kern Rim, Nivo Rovedo | 2008-10-28 |
| 7410852 | Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors | Scott D. Allen, Cyril Cabral, Jr., Kevin K. Dezfulian, Sunfei Fang, Brian J. Greene +6 more | 2008-08-12 |
| 7307323 | Structure to use an etch resistant liner on transistor gate structure to achieve high device performance | Haining Yang | 2007-12-11 |
| 7064027 | Method and structure to use an etch resistant liner on transistor gate structure to achieve high device performance | Haining Yang | 2006-06-20 |
| 6884734 | Vapor phase etch trim structure with top etch blocking layer | Frederick Buehrer, Derek Chen, William Chu, Scott W. Crowder, Sadanand V. Deshpande +4 more | 2005-04-26 |
| 6656375 | Selective nitride: oxide anisotropic etch process | Michael D. Armacost, David M. Dobuzinsky, John C. Malinowski, Richard S. Wise, Chienfan Yu | 2003-12-02 |
| 6369434 | Nitrogen co-implantation to form shallow junction-extensions of p-type metal oxide semiconductor field effect transistors | Kai CK Chen, Scott W. Crowder, Liang Han, Michael Hargrove, Kam-Leung Lee | 2002-04-09 |
| 6030541 | Process for defining a pattern using an anti-reflective coating and structure therefor | James W. Adkisson, Michael Caterer, James T. Marsh, James M. Oberschmidt, Jed H. Rankin | 2000-02-29 |
| 4734157 | Selective and anisotropic dry etching | Susanna R. Carbaugh, Murty S. Polavarapu, David Stanasolovich | 1988-03-29 |