HN

Hung Y. Ng

IBM: 16 patents #6,952 of 70,183Top 10%
CM Chartered Semiconductor Manufacturing: 3 patents #194 of 840Top 25%
Infineon Technologies Ag: 1 patents #4,439 of 7,486Top 60%
Samsung: 1 patents #49,284 of 75,807Top 70%
Overall (All Time): #299,129 of 4,157,543Top 8%
16
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
8643119 Substantially L-shaped silicide for contact Zhijiong Luo, Huilong Zhu, Yung Fu Chong, Kern Rim, Nivo Rovedo 2014-02-04
8268698 Formation of improved SOI substrates using bulk semiconductor wafers William K. Henson, Dureseti Chidambarrao, Kern Rim, Hsingjen Wann 2012-09-18
8039331 Opto-thermal annealing methods for forming metal gate and fully silicided gate-field effect transistors Scott D. Allen, Cyril Cabral, Jr., Kevin K. Dezfulian, Sunfei Fang, Brian J. Greene +6 more 2011-10-18
7932158 Formation of improved SOI substrates using bulk semiconductor wafers William K. Henson, Dureseti Chidambarrao, Kern Rim, Hsingjen Wann 2011-04-26
7785950 Dual stress memory technique method and related structure Sunfei Fang, Jun Jung Kim, Zhijiong Luo, Nivo Rovedo, Young Way Teh 2010-08-31
7772676 Strained semiconductor device and method of making same Jin-Ping Han, Judson R. Holt 2010-08-10
7452784 Formation of improved SOI substrates using bulk semiconductor wafers William K. Henson, Dureseti Chidambarrao, Kern Rim, Hsingjen Wann 2008-11-18
7442619 Method of forming substantially L-shaped silicide contact for a semiconductor device Zhijiong Luo, Huilong Zhu, Yung Fu Chong, Kern Rim, Nivo Rovedo 2008-10-28
7410852 Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors Scott D. Allen, Cyril Cabral, Jr., Kevin K. Dezfulian, Sunfei Fang, Brian J. Greene +6 more 2008-08-12
7307323 Structure to use an etch resistant liner on transistor gate structure to achieve high device performance Haining Yang 2007-12-11
7064027 Method and structure to use an etch resistant liner on transistor gate structure to achieve high device performance Haining Yang 2006-06-20
6884734 Vapor phase etch trim structure with top etch blocking layer Frederick Buehrer, Derek Chen, William Chu, Scott W. Crowder, Sadanand V. Deshpande +4 more 2005-04-26
6656375 Selective nitride: oxide anisotropic etch process Michael D. Armacost, David M. Dobuzinsky, John C. Malinowski, Richard S. Wise, Chienfan Yu 2003-12-02
6369434 Nitrogen co-implantation to form shallow junction-extensions of p-type metal oxide semiconductor field effect transistors Kai CK Chen, Scott W. Crowder, Liang Han, Michael Hargrove, Kam-Leung Lee 2002-04-09
6030541 Process for defining a pattern using an anti-reflective coating and structure therefor James W. Adkisson, Michael Caterer, James T. Marsh, James M. Oberschmidt, Jed H. Rankin 2000-02-29
4734157 Selective and anisotropic dry etching Susanna R. Carbaugh, Murty S. Polavarapu, David Stanasolovich 1988-03-29