DD

David M. Dobuzinsky

IBM: 51 patents #1,671 of 70,183Top 3%
SA Siemens Aktiengesellschaft: 6 patents #2,149 of 22,248Top 10%
Infineon Technologies Ag: 5 patents #1,696 of 7,486Top 25%
KT Kabushiki Kaisha Toshiba: 3 patents #8,011 of 21,451Top 40%
Overall (All Time): #46,277 of 4,157,543Top 2%
55
Patents All Time

Issued Patents All Time

Showing 25 most recent of 55 patents

Patent #TitleCo-InventorsDate
8772850 Embedded DRAM memory cell with additional patterning layer for improved strap formation Kangguo Cheng, Byeong Y. Kim, Munir D. Naeem 2014-07-08
8426268 Embedded DRAM memory cell with additional patterning layer for improved strap formation Kangguo Cheng, Byeong Y. Kim, Munir D. Naeem 2013-04-23
8008713 Vertical SOI trench SONOS cell Herbert L. Ho, Jack A. Mandelman, Yoichi Otani 2011-08-30
8003488 Shallow trench isolation structure compatible with SOI embedded DRAM Kangguo Cheng, Munir D. Naeem, Byeong Y. Kim 2011-08-23
7893485 Vertical SOI trench SONOS cell Herbert L. Ho, Jack A. Mandelman, Yoichi Otani 2011-02-22
7871893 Method for non-selective shallow trench isolation reactive ion etch for patterning hybrid-oriented devices compatible with high-performance highly-integrated logic devices Gregory Costrini, Thomas S. Kanarsky, Munir D. Naeem, Christopher D. Sheraw, Richard S. Wise 2011-01-18
7592245 Poly filled substrate contact on SOI structure Byeong Y. Kim, Effendi Leobandung, Munir D. Naeem, Brian L. Tessier 2009-09-22
7560360 Methods for enhancing trench capacitance and trench capacitor Kangguo Cheng, Xi Li 2009-07-14
7514323 Vertical SOI trench SONOS cell Herbert L. Ho, Jack A. Mandelman, Yoichi Otani 2009-04-07
7394131 STI formation in semiconductor device including SOI and bulk silicon regions Michael D. Steigerwalt, Mahender Kumar, Herbert L. Ho, Johnathan E. Faltermeier, Denise Pendleton 2008-07-01
7358172 Poly filled substrate contact on SOI structure Byeong Y. Kim, Effendi Leobandung, Munir D. Naeem, Brian L. Tessier 2008-04-15
7118986 STI formation in semiconductor device including SOI and bulk silicon regions Michael D. Steigerwalt, Mahender Kumar, Herbert L. Ho, Johnathan E. Faltermeier, Denise Pendleton 2006-10-10
7087532 Formation of controlled sublithographic structures Jochen Beintner, Siddhartha Panda 2006-08-08
6964897 SOI trench capacitor cell incorporating a low-leakage floating body array transistor Karen Bard, Herbert L. Ho, Mahendar Kumar, Denise Pendleton, Michael D. Steigerwalt +1 more 2005-11-15
6960523 Method of reducing erosion of a nitride gate cap layer during reactive ion etch of nitride liner layer for bit line contact of DRAM device Michael Maldei, Prakash Dev, Johnathan E. Faltermeier, Thomas Rupp, Chienfan Yu +3 more 2005-11-01
6890815 Reduced cap layer erosion for borderless contacts Johnathan E. Faltermeier, Jeremy K. Stephens, Larry Clevenger, Munir D. Naeem, Chienfan Yu +3 more 2005-05-10
6887785 Etching openings of different depths using a single mask layer method and structure Carl Radens, Roy Iggulden, Jay William Strane, Keith Kwong Hon Wong 2005-05-03
6869542 Hard mask integrated etch process for patterning of silicon oxide and other dielectric materials Sadanand V. Desphande, Arpan Mahorowala, Tina Wagner, Richard S. Wise 2005-03-22
6809027 Self-aligned borderless contacts Jay William Strane, Hiroyuki Akatsu 2004-10-26
6806200 Method of improving etch uniformity in deep silicon etching Siddhartha Panda, Rolf Weis, Richard S. Wise 2004-10-19
6806177 Method of making self-aligned borderless contacts Jay William Strane, Hiroyuki Akatsu 2004-10-19
6740539 Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates Richard A. Conti, Prakash Dev, Daniel C. Edelstein, Gill Yong Lee, Kia-Seng Low +3 more 2004-05-25
6740568 Method to enhance epitaxial regrowth in amorphous silicon contacts Yun-Yu Wang, Johnathan E. Faltermeier, Colleen Snavely, Michael Maldei, Michael Iwatake +4 more 2004-05-25
6656375 Selective nitride: oxide anisotropic etch process Michael D. Armacost, John C. Malinowski, Hung Y. Ng, Richard S. Wise, Chienfan Yu 2003-12-02
6570256 Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates Richard A. Conti, Prakash Dev, Daniel C. Edelstein, Gill Yong Lee, Kia-Seng Low +3 more 2003-05-27