| 10332971 |
Replacement metal gate stack for diffusion prevention |
Takashi Ando, Su Chen Fan, Sivananda K. Kanakasabapathy, Injo Ok, Tenko Yamashita |
2019-06-25 |
$2,152,000 |
| 10008415 |
Gate structure cut after formation of epitaxial active regions |
Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz, Theodorus E. Standaert, Ruilong Xie |
2018-06-26 |
$3,428,000 |
| 9905665 |
Replacement metal gate stack for diffusion prevention |
Takashi Ando, Su Chen Fan, Sivananda K. Kanakasabapathy, Injo Ok, Tenko Yamashita |
2018-02-27 |
$3,821,000 |
| 9865703 |
High-K layer chamfering to prevent oxygen ingress in replacement metal gate (RMG) process |
Takashi Ando, Veeraraghavan S. Basker, Hemanth Jagannathan, Tenko Yamashita |
2018-01-09 |
$3,907,000 |
| 9735277 |
Partially dielectric isolated fin-shaped field effect transistor (FinFET) |
Kangguo Cheng, Ramachandra Divakaruni, Edward J. Nowak, Kern Rim |
2017-08-15 |
$1,588,000 |
| 9633906 |
Gate structure cut after formation of epitaxial active regions |
Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz, Theodorus E. Standaert, Ruilong Xie |
2017-04-25 |
$1,937,000 |
| 9559009 |
Gate structure cut after formation of epitaxial active regions |
Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz, Theodorus E. Standaert, Ruilong Xie |
2017-01-31 |
$3,813,000 |
| 9537011 |
Partially dielectric isolated fin-shaped field effect transistor (FinFET) |
Kangguo Cheng, Ramachandra Divakaruni, Edward J. Nowak, Kern Rim |
2017-01-03 |
$2,646,000 |
| 9472408 |
Nitridation on HDP oxide before high-k deposition to prevent oxygen ingress |
Takashi Ando, Veeraraghavan S. Basker, Hemanth Jagannathan, Tenko Yamashita |
2016-10-18 |
$1,445,000 |
| 9412596 |
Nitridation on HDP oxide before high-k deposition to prevent oxygen ingress |
Takashi Ando, Veeraraghavan S. Basker, Hemanth Jagannathan, Tenko Yamashita |
2016-08-09 |
$4,722,000 |
| 9337315 |
FinFET spacer formation by oriented implantation |
Veeraraghavan S. Basker, Kangguo Cheng, Bruce B. Doris |
2016-05-10 |
$1,020,000 |
| 9331174 |
Method for improving device performance using epitaxially grown silicon carbon (SiC) or silicon-germanium (SiGe) |
Bruce B. Doris, Lahir M. Shaik Adam, Balasubramanian S. Haran |
2016-05-03 |
$2,239,000 |
| 9318578 |
FinFET spacer formation by oriented implantation |
Veeraraghavan S. Basker, Kangguo Cheng, Bruce B. Doris |
2016-04-19 |
$757,000 |
| 9312136 |
Replacement metal gate stack for diffusion prevention |
Takashi Ando, Su Chen Fan, Sivananda K. Kanakasabapathy, Injo Ok, Tenko Yamashita |
2016-04-12 |
$2,843,000 |
| 9263454 |
Semiconductor structure having buried conductive elements |
Emre Alptekin, Pooja R. Batra, Kangguo Cheng, Ramachandra Divakaruni, Reinaldo Vega |
2016-02-16 |
$2,821,000 |
| 9245892 |
Semiconductor structure having buried conductive elements |
Emre Alptekin, Pooja R. Batra, Kangguo Cheng, Ramachandra Divakaruni, Reinaldo Vega |
2016-01-26 |
$2,109,000 |
| 9240447 |
finFETs containing improved strain benefit and self aligned trench isolation structures |
Kangguo Cheng, Ali Khakifirooz |
2016-01-19 |
$15,136,000 |
| 9105559 |
Conformal doping for FinFET devices |
Veeraraghavan S. Basker, Nathaniel Berliner, Hyun-Jin Cho, Kam-Leung Lee, Tenko Yamashita |
2015-08-11 |
|
| 8932932 |
Highly scalable trench capacitor |
Kangguo Cheng, Anne Marie Kimball |
2015-01-13 |
$4,389,000 |
| 8933515 |
Device structure, layout and fabrication method for uniaxially strained transistors |
Stephen W. Bedell, Huiming Bu, Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz +2 more |
2015-01-13 |
$4,389,000 |
| 8928057 |
Uniform finFET gate height |
William J. Cote, Babar A. Khan, Ravikumar Ramachandran, Theodorus E. Standaert, Xinhui Wang |
2015-01-06 |
$2,134,000 |
| 8901664 |
High-K/metal gate CMOS finFET with improved pFET threshold voltage |
Veeraraghavan S. Basker, Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz |
2014-12-02 |
$2,384,000 |
| 8716797 |
FinFET spacer formation by oriented implantation |
Veeraraghavan S. Basker, Chang Kangguo, Bruce B. Doris |
2014-05-06 |
$5,370,000 |
| 8525186 |
Method of forming a planar field effect transistor with embedded and faceted source/drain stressors on a silicon-on-insulator (SOI) wafer, a planar field effect transistor structure and a design structure for the planar field effect transistor |
Kangguo Cheng, Toshiharu Furukawa, Xuefeng Hua |
2013-09-03 |
$4,698,000 |
| 8513718 |
Stress enhanced transistor devices and methods of making |
Judson R. Holt, Xuefeng Hua |
2013-08-20 |
$3,918,000 |
