Issued Patents All Time
Showing 25 most recent of 65 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10332971 | Replacement metal gate stack for diffusion prevention | Takashi Ando, Su Chen Fan, Sivananda K. Kanakasabapathy, Injo Ok, Tenko Yamashita | 2019-06-25 |
| 10008415 | Gate structure cut after formation of epitaxial active regions | Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz, Theodorus E. Standaert, Ruilong Xie | 2018-06-26 |
| 9905665 | Replacement metal gate stack for diffusion prevention | Takashi Ando, Su Chen Fan, Sivananda K. Kanakasabapathy, Injo Ok, Tenko Yamashita | 2018-02-27 |
| 9865703 | High-K layer chamfering to prevent oxygen ingress in replacement metal gate (RMG) process | Takashi Ando, Veeraraghavan S. Basker, Hemanth Jagannathan, Tenko Yamashita | 2018-01-09 |
| 9735277 | Partially dielectric isolated fin-shaped field effect transistor (FinFET) | Kangguo Cheng, Ramachandra Divakaruni, Edward J. Nowak, Kern Rim | 2017-08-15 |
| 9633906 | Gate structure cut after formation of epitaxial active regions | Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz, Theodorus E. Standaert, Ruilong Xie | 2017-04-25 |
| 9559009 | Gate structure cut after formation of epitaxial active regions | Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz, Theodorus E. Standaert, Ruilong Xie | 2017-01-31 |
| 9537011 | Partially dielectric isolated fin-shaped field effect transistor (FinFET) | Kangguo Cheng, Ramachandra Divakaruni, Edward J. Nowak, Kern Rim | 2017-01-03 |
| 9472408 | Nitridation on HDP oxide before high-k deposition to prevent oxygen ingress | Takashi Ando, Veeraraghavan S. Basker, Hemanth Jagannathan, Tenko Yamashita | 2016-10-18 |
| 9412596 | Nitridation on HDP oxide before high-k deposition to prevent oxygen ingress | Takashi Ando, Veeraraghavan S. Basker, Hemanth Jagannathan, Tenko Yamashita | 2016-08-09 |
| 9337315 | FinFET spacer formation by oriented implantation | Veeraraghavan S. Basker, Kangguo Cheng, Bruce B. Doris | 2016-05-10 |
| 9331174 | Method for improving device performance using epitaxially grown silicon carbon (SiC) or silicon-germanium (SiGe) | Bruce B. Doris, Lahir M. Shaik Adam, Balasubramanian S. Haran | 2016-05-03 |
| 9318578 | FinFET spacer formation by oriented implantation | Veeraraghavan S. Basker, Kangguo Cheng, Bruce B. Doris | 2016-04-19 |
| 9312136 | Replacement metal gate stack for diffusion prevention | Takashi Ando, Su Chen Fan, Sivananda K. Kanakasabapathy, Injo Ok, Tenko Yamashita | 2016-04-12 |
| 9263454 | Semiconductor structure having buried conductive elements | Emre Alptekin, Pooja R. Batra, Kangguo Cheng, Ramachandra Divakaruni, Reinaldo Vega | 2016-02-16 |
| 9245892 | Semiconductor structure having buried conductive elements | Emre Alptekin, Pooja R. Batra, Kangguo Cheng, Ramachandra Divakaruni, Reinaldo Vega | 2016-01-26 |
| 9240447 | finFETs containing improved strain benefit and self aligned trench isolation structures | Kangguo Cheng, Ali Khakifirooz | 2016-01-19 |
| 9105559 | Conformal doping for FinFET devices | Veeraraghavan S. Basker, Nathaniel Berliner, Hyun-Jin Cho, Kam-Leung Lee, Tenko Yamashita | 2015-08-11 |
| 8932932 | Highly scalable trench capacitor | Kangguo Cheng, Anne Marie Kimball | 2015-01-13 |
| 8933515 | Device structure, layout and fabrication method for uniaxially strained transistors | Stephen W. Bedell, Huiming Bu, Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz +2 more | 2015-01-13 |
| 8928057 | Uniform finFET gate height | William J. Cote, Babar A. Khan, Ravikumar Ramachandran, Theodorus E. Standaert, Xinhui Wang | 2015-01-06 |
| 8901664 | High-K/metal gate CMOS finFET with improved pFET threshold voltage | Veeraraghavan S. Basker, Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2014-12-02 |
| 8716797 | FinFET spacer formation by oriented implantation | Veeraraghavan S. Basker, Chang Kangguo, Bruce B. Doris | 2014-05-06 |
| 8525186 | Method of forming a planar field effect transistor with embedded and faceted source/drain stressors on a silicon-on-insulator (SOI) wafer, a planar field effect transistor structure and a design structure for the planar field effect transistor | Kangguo Cheng, Toshiharu Furukawa, Xuefeng Hua | 2013-09-03 |
| 8513718 | Stress enhanced transistor devices and methods of making | Judson R. Holt, Xuefeng Hua | 2013-08-20 |