Issued Patents All Time
Showing 26–50 of 65 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8492817 | Highly scalable trench capacitor | Kangguo Cheng, Anne Marie Ebert | 2013-07-23 |
| 8420464 | Spacer as hard mask scheme for in-situ doping in CMOS finFETs | Veeraraghavan S. Basker, Kangguo Cheng, Bruce B. Doris, Sivananda K. Kanakasabapathy, Hemant Adhikari | 2013-04-16 |
| 8367544 | Self-aligned patterned etch stop layers for semiconductor devices | Kangguo Cheng, Lawrence A. Clevenger, Stephan Grunow, Kaushik A. Kumar, Kevin S. Petrarca | 2013-02-05 |
| 8288218 | Device structure, layout and fabrication method for uniaxially strained transistors | Stephen W. Bedell, Huiming Bu, Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz +2 more | 2012-10-16 |
| 8268729 | Smooth and vertical semiconductor fin structure | Kangguo Cheng, Bruce B. Doris, Ying Zhang | 2012-09-18 |
| 8216893 | Stress enhanced transistor devices and methods of making | Judson R. Holt, Xuefeng Hua | 2012-07-10 |
| 7993999 | High-K/metal gate CMOS finFET with improved pFET threshold voltage | Veeraraghavan S. Basker, Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2011-08-09 |
| 7951657 | Method of forming a planar field effect transistor with embedded and faceted source/drain stressors on a silicon-on-insulator (S0I) wafer, a planar field effect transistor structure and a design structure for the planar field effect transistor | Kangguo Cheng, Toshiharu Furukawa, Xuefeng Hua | 2011-05-31 |
| 7932136 | Source/drain junction for high performance MOSFET formed by selective EPI process | Xuefeng Hua, Toshiharu Furukawa, Oleg Gluschenkov | 2011-04-26 |
| 7923815 | DRAM having deep trench capacitors with lightly doped buried plates | Geng Wang, Kangguo Cheng, Paul C. Parries | 2011-04-12 |
| 7893480 | Trench memory with self-aligned strap formed by self-limiting process | Xi Li, Kangguo Cheng | 2011-02-22 |
| 7888252 | Self-aligned contact | Stephan Grunow, Kangguo Cheng, Kevin S. Petrarca, Kaushik A. Kumar, Lawrence A. Clevenger +2 more | 2011-02-15 |
| 7833872 | Uniform recess of a material in a trench independent of incoming topography | Kangguo Cheng, Xi Li | 2010-11-16 |
| 7749835 | Trench memory with self-aligned strap formed by self-limiting process | Xi Li, Kangguo Cheng | 2010-07-06 |
| 7705386 | Providing isolation for wordline passing over deep trench capacitor | Kangguo Cheng, Herbert L. Ho, Paul C. Parries | 2010-04-27 |
| 7547608 | Polysilicon hard mask for enhanced alignment signal | Kangguo Cheng, James P. Norum | 2009-06-16 |
| 7494891 | Trench capacitor with void-free conductor fill | Kangguo Cheng, Xi Li | 2009-02-24 |
| 7394131 | STI formation in semiconductor device including SOI and bulk silicon regions | Michael D. Steigerwalt, Mahender Kumar, Herbert L. Ho, David M. Dobuzinsky, Denise Pendleton | 2008-07-01 |
| 7193262 | Low-cost deep trench decoupling capacitor device and process of manufacture | Herbert L. Ho, John E. Barth, Jr., Ramachandra Divakaruni, Wayne F. Ellis, Brent A. Anderson +4 more | 2007-03-20 |
| 7118986 | STI formation in semiconductor device including SOI and bulk silicon regions | Michael D. Steigerwalt, Mahender Kumar, Herbert L. Ho, David M. Dobuzinsky, Denise Pendleton | 2006-10-10 |
| 7084449 | Microelectronic element having trench capacitors with different capacitance values | Kangguo Cheng, David R. Hanson, Carl Radens | 2006-08-01 |
| 6960523 | Method of reducing erosion of a nitride gate cap layer during reactive ion etch of nitride liner layer for bit line contact of DRAM device | Michael Maldei, Prakash Dev, David M. Dobuzinsky, Thomas Rupp, Chienfan Yu +3 more | 2005-11-01 |
| 6960514 | Pitcher-shaped active area for field effect transistor and method of forming same | Jochen Beintner, Rama Divakaruni, Philip L. Flaitz, Oleg Gluschenkov, Carol J. Heenan +5 more | 2005-11-01 |
| 6893938 | STI formation for vertical and planar transistors | Munir D. Naeem, Hiroyuki Akatsu, Byeong Y. Kim, Rolf Weis, David Mark Dobuzinksy | 2005-05-17 |
| 6890815 | Reduced cap layer erosion for borderless contacts | Jeremy K. Stephens, David M. Dobuzinsky, Larry Clevenger, Munir D. Naeem, Chienfan Yu +3 more | 2005-05-10 |