XH

Xuefeng Hua

IBM: 11 patents #9,995 of 70,183Top 15%
Applied Materials: 1 patents #4,780 of 7,310Top 70%
FS Freeescale Semiconductor: 1 patents #2,021 of 3,767Top 55%
UM University Of Maryland: 1 patents #209 of 857Top 25%
Lam Research: 1 patents #1,364 of 2,128Top 65%
Overall (All Time): #334,543 of 4,157,543Top 9%
14
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
12332042 In-situ wafer thickness and gap monitoring using through beam laser sensor Goon Heng WONG, Anthony Paul Van Selow, Daniel Torres, Jack Chen 2025-06-17
9472416 Methods of surface interface engineering Jim Zhongyi He, Ping Han Hsieh, Melitta Hon, Chun YAN 2016-10-18
8569868 Device having and method for forming fins with multiple widths Kangguo Cheng, Bruce B. Doris, Steven J. Holmes, Ying Zhang 2013-10-29
8536630 Transistor devices and methods of making John C. Arnold, Rangarajan Jagannathan, Stefan Schmitz 2013-09-17
8525186 Method of forming a planar field effect transistor with embedded and faceted source/drain stressors on a silicon-on-insulator (SOI) wafer, a planar field effect transistor structure and a design structure for the planar field effect transistor Kangguo Cheng, Johnathan E. Faltermeier, Toshiharu Furukawa 2013-09-03
8513718 Stress enhanced transistor devices and methods of making Johnathan E. Faltermeier, Judson R. Holt 2013-08-20
8324036 Device having and method for forming fins with multiple widths for an integrated circuit Kangguo Cheng, Bruce B. Doris, Steven J. Holmes, Ying Zhang 2012-12-04
8216893 Stress enhanced transistor devices and methods of making Johnathan E. Faltermeier, Judson R. Holt 2012-07-10
8084329 Transistor devices and methods of making John C. Arnold, Rangarajan Jagannathan, Stefan Schmitz 2011-12-27
7951657 Method of forming a planar field effect transistor with embedded and faceted source/drain stressors on a silicon-on-insulator (S0I) wafer, a planar field effect transistor structure and a design structure for the planar field effect transistor Kangguo Cheng, Johnathan E. Faltermeier, Toshiharu Furukawa 2011-05-31
7936017 Reduced floating body effect without impact on performance-enhancing stress William F. Clark, Jr., Toshiharu Furukawa, Charles W. Koburger, III, Robert R. Robison 2011-05-03
7932136 Source/drain junction for high performance MOSFET formed by selective EPI process Johnathan E. Faltermeier, Toshiharu Furukawa, Oleg Gluschenkov 2011-04-26
7883829 Lithography for pitch reduction Steven J. Holmes, Willard E. Conley 2011-02-08
7470329 Method and system for nanoscale plasma processing of objects Gottlieb S. Oehrlein, Christian Stolz 2008-12-30