Issued Patents All Time
Showing 1–8 of 8 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10566416 | Semiconductor device with improved field layer | Amaury Gendron-Hansen, Bruce Odekirk, Dumitru Sdrulla | 2020-02-18 |
| 9105559 | Conformal doping for FinFET devices | Veeraraghavan S. Basker, Hyun-Jin Cho, Johnathan E. Faltermeier, Kam-Leung Lee, Tenko Yamashita | 2015-08-11 |
| 9018024 | Creating extremely thin semiconductor-on-insulator (ETSOI) having substantially uniform thickness | Kangguo Cheng, Jason E. Cummings, Toshiharu Furukawa, Jed H. Rankin, Robert R. Robison +1 more | 2015-04-28 |
| 8940554 | Method of creating an extremely thin semiconductor-on-insulator (ETSOI) layer having a uniform thickness | Kangguo Cheng, Toshiharu Furukawa, Douglas C. La Tulipe, Jr., William R. Tonti | 2015-01-27 |
| 8927422 | Raised silicide contact | Emre Alptekin, Christian Lavoie, Kam-Leung Lee, Ahmet S. Ozcan | 2015-01-06 |
| 8900973 | Method to enable compressively strained pFET channel in a FinFET structure by implant and thermal diffusion | Pranita Kulkarni, Nicolas Loubet, Kingsuk Maitra, Sanjay C. Mehta, Paul A. Ronsheim +2 more | 2014-12-02 |
| 8796128 | Dual metal fill and dual threshold voltage for replacement gate metal devices | Lisa F. Edge, James J. Demarest, Balasubramanian S. Haran, Raymond J. Donohue | 2014-08-05 |
| 8124427 | Method of creating an extremely thin semiconductor-on-insulator (ETSOI) layer having a uniform thickness | Kangguo Cheng, Toshiharu Furukawa, Douglas C. La Tulipe, Jr., William R. Tonti | 2012-02-28 |