Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
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Dumitru Sdrulla — 23 Patents

MIMicrosemi: 11 patents #5 of 169Top 3%
ACAnalog Power Conversion: 6 patents #1 of 9Top 15%
ATAdvanced Power Technology: 3 patents #6 of 20Top 30%
KCKyosan Electric Mfg. Co.: 2 patents #20 of 57Top 40%
MIMicrochip Technology Incorporated: 1 patents #521 of 958Top 55%
Bend, OR: #36 of 663 inventorsTop 6%
Oregon: #1,851 of 28,073 inventorsTop 7%
Overall (All Time): #178,160 of 4,157,543Top 5%
23 Patents All Time
Dumitru Sdrulla has been granted 23 US patents while listed as an inventor at Microsemi. The first was granted in 1996 and the most recent in November 2025. Dumitru Sdrulla ranks #178,160 of 4,157,543 US inventors in our database (top 4.3%). Patent records list Dumitru Sdrulla in Bend, OR, US.

Issued Patents All Time

Showing 1–23 of 23 patents

Patent #TitleCo-InventorsDateApprox Value ⓘ
12477768 SiC static induction transistor with double side cooling and method of manufacture Amaury Gendron-Hansen, Wang-Chang Albert Gu 2025-11-18
12224343 Power device with partitioned active regions Amaury Gendron-Hansen, Leslie Szepesi 2025-02-11
12081177 Bridged class-D RF amplifier circuit Sam Seiichiro Ochi, W. Albert Gu, Tetsuya Takata, Itsuo Yuzurihara, Tomohiro Yoneyama +1 more 2024-09-03
12074198 Semiconductor device with improved temperature uniformity Amaury Gendron-Hansen, Leslie Szepesi 2024-08-27
12074226 Schottky diode integrated with a semiconductor device Amaury Gendron-Hansen, Leslie Szepesi, Tetsuya Takata, Itsuo Yuzurihara, Tomohiro Yoneyama +1 more 2024-08-27
11901406 Semiconductor high-voltage termination with deep trench and floating field rings Amaury Gendron-Hansen 2024-02-13
11830943 RF SiC MOSFET with recessed gate dielectric Amaury Gendron-Hansen 2023-11-28
11764209 Power semiconductor device with forced carrier extraction and method of manufacture 2023-09-19
11158703 Space efficient high-voltage termination and process for fabricating same Amaury Gendron-Hansen 2021-10-26 $136,102,000
10811494 Method and assembly for mitigating short channel effects in silicon carbide MOSFET devices Avinash Srikrishnan Kashyap 2020-10-20
10566416 Semiconductor device with improved field layer Amaury Gendron-Hansen, Bruce Odekirk, Nathaniel Berliner 2020-02-18
9478606 SiC transient voltage suppressor Bruce Odekirk, Cecil Kent Walters 2016-10-25 $32,296,000
9040377 Low loss SiC MOSFET Bruce Odekirk, Marc H. Vandenberg 2015-05-26 $20,849,000
8841718 Pseudo self aligned radhard MOSFET and process of manufacture Marc H. Vandenberg, Eric Karlsson 2014-09-23 $3,713,000
8674439 Low loss SiC MOSFET Bruce Odekirk, Marc H. Vandenberg 2014-03-18 $6,677,000
8476691 High reliability-high voltage junction termination with charge dissipation layer Duane Edward Levine, James M. Katana, Martin David Birch 2013-07-02 $6,114,000
8436367 SiC power vertical DMOS with increased safe operating area Bruce Odekirk, Marc H. Vandenberg 2013-05-07 $3,938,000
8110888 Edge termination for high voltage semiconductor device Jinshu Zhang, Dah W. Tsang 2012-02-07 $13,484,000
7851881 Schottky barrier diode (SBD) and its off-shoot merged PN/Schottky diode or junction barrier Schottky (JBS) diode Feng Zhao, Bruce Odekirk 2010-12-14 $6,081,000
7671410 Design and fabrication of rugged FRED, power MOSFET or IGBT Shanqi Zhao 2010-03-02 $10,153,000
7169634 Design and fabrication of rugged FRED Shanqi Zhao 2007-01-30
5648283 High density power device fabrication process using undercut oxide sidewalls Dah W. Tsang, Douglas A. Pike, Jr., Theodore O. Meyer, John W. Mosier, II 1997-07-15
5528058 IGBT device with platinum lifetime control and reduced gaw Douglas A. Pike, Jr., Dah W. Tsang, James M. Katana 1996-06-18