Issued Patents All Time
Showing 1–22 of 22 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12224343 | Power device with partitioned active regions | Amaury Gendron-Hansen, Leslie Szepesi | 2025-02-11 |
| 12081177 | Bridged class-D RF amplifier circuit | Sam Seiichiro Ochi, W. Albert Gu, Tetsuya Takata, Itsuo Yuzurihara, Tomohiro Yoneyama +1 more | 2024-09-03 |
| 12074198 | Semiconductor device with improved temperature uniformity | Amaury Gendron-Hansen, Leslie Szepesi | 2024-08-27 |
| 12074226 | Schottky diode integrated with a semiconductor device | Amaury Gendron-Hansen, Leslie Szepesi, Tetsuya Takata, Itsuo Yuzurihara, Tomohiro Yoneyama +1 more | 2024-08-27 |
| 11901406 | Semiconductor high-voltage termination with deep trench and floating field rings | Amaury Gendron-Hansen | 2024-02-13 |
| 11830943 | RF SiC MOSFET with recessed gate dielectric | Amaury Gendron-Hansen | 2023-11-28 |
| 11764209 | Power semiconductor device with forced carrier extraction and method of manufacture | — | 2023-09-19 |
| 11158703 | Space efficient high-voltage termination and process for fabricating same | Amaury Gendron-Hansen | 2021-10-26 |
| 10811494 | Method and assembly for mitigating short channel effects in silicon carbide MOSFET devices | Avinash Srikrishnan Kashyap | 2020-10-20 |
| 10566416 | Semiconductor device with improved field layer | Amaury Gendron-Hansen, Bruce Odekirk, Nathaniel Berliner | 2020-02-18 |
| 9478606 | SiC transient voltage suppressor | Bruce Odekirk, Cecil Kent Walters | 2016-10-25 |
| 9040377 | Low loss SiC MOSFET | Bruce Odekirk, Marc H. Vandenberg | 2015-05-26 |
| 8841718 | Pseudo self aligned radhard MOSFET and process of manufacture | Marc H. Vandenberg, Eric Karlsson | 2014-09-23 |
| 8674439 | Low loss SiC MOSFET | Bruce Odekirk, Marc H. Vandenberg | 2014-03-18 |
| 8476691 | High reliability-high voltage junction termination with charge dissipation layer | Duane Edward Levine, James M. Katana, Martin David Birch | 2013-07-02 |
| 8436367 | SiC power vertical DMOS with increased safe operating area | Bruce Odekirk, Marc H. Vandenberg | 2013-05-07 |
| 8110888 | Edge termination for high voltage semiconductor device | Jinshu Zhang, Dah W. Tsang | 2012-02-07 |
| 7851881 | Schottky barrier diode (SBD) and its off-shoot merged PN/Schottky diode or junction barrier Schottky (JBS) diode | Feng Zhao, Bruce Odekirk | 2010-12-14 |
| 7671410 | Design and fabrication of rugged FRED, power MOSFET or IGBT | Shanqi Zhao | 2010-03-02 |
| 7169634 | Design and fabrication of rugged FRED | Shanqi Zhao | 2007-01-30 |
| 5648283 | High density power device fabrication process using undercut oxide sidewalls | Dah W. Tsang, Douglas A. Pike, Jr., Theodore O. Meyer, John W. Mosier, II | 1997-07-15 |
| 5528058 | IGBT device with platinum lifetime control and reduced gaw | Douglas A. Pike, Jr., Dah W. Tsang, James M. Katana | 1996-06-18 |