DS

Dumitru Sdrulla

MI Microsemi: 11 patents #5 of 169Top 3%
AC Analog Power Conversion: 6 patents #1 of 9Top 15%
AT Advanced Power Technology: 3 patents #6 of 20Top 30%
KC Kyosan Electric Mfg. Co.: 2 patents #20 of 57Top 40%
MI Microchip Technology Incorporated: 1 patents #521 of 958Top 55%
Overall (All Time): #188,202 of 4,157,543Top 5%
22
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
12224343 Power device with partitioned active regions Amaury Gendron-Hansen, Leslie Szepesi 2025-02-11
12081177 Bridged class-D RF amplifier circuit Sam Seiichiro Ochi, W. Albert Gu, Tetsuya Takata, Itsuo Yuzurihara, Tomohiro Yoneyama +1 more 2024-09-03
12074198 Semiconductor device with improved temperature uniformity Amaury Gendron-Hansen, Leslie Szepesi 2024-08-27
12074226 Schottky diode integrated with a semiconductor device Amaury Gendron-Hansen, Leslie Szepesi, Tetsuya Takata, Itsuo Yuzurihara, Tomohiro Yoneyama +1 more 2024-08-27
11901406 Semiconductor high-voltage termination with deep trench and floating field rings Amaury Gendron-Hansen 2024-02-13
11830943 RF SiC MOSFET with recessed gate dielectric Amaury Gendron-Hansen 2023-11-28
11764209 Power semiconductor device with forced carrier extraction and method of manufacture 2023-09-19
11158703 Space efficient high-voltage termination and process for fabricating same Amaury Gendron-Hansen 2021-10-26
10811494 Method and assembly for mitigating short channel effects in silicon carbide MOSFET devices Avinash Srikrishnan Kashyap 2020-10-20
10566416 Semiconductor device with improved field layer Amaury Gendron-Hansen, Bruce Odekirk, Nathaniel Berliner 2020-02-18
9478606 SiC transient voltage suppressor Bruce Odekirk, Cecil Kent Walters 2016-10-25
9040377 Low loss SiC MOSFET Bruce Odekirk, Marc H. Vandenberg 2015-05-26
8841718 Pseudo self aligned radhard MOSFET and process of manufacture Marc H. Vandenberg, Eric Karlsson 2014-09-23
8674439 Low loss SiC MOSFET Bruce Odekirk, Marc H. Vandenberg 2014-03-18
8476691 High reliability-high voltage junction termination with charge dissipation layer Duane Edward Levine, James M. Katana, Martin David Birch 2013-07-02
8436367 SiC power vertical DMOS with increased safe operating area Bruce Odekirk, Marc H. Vandenberg 2013-05-07
8110888 Edge termination for high voltage semiconductor device Jinshu Zhang, Dah W. Tsang 2012-02-07
7851881 Schottky barrier diode (SBD) and its off-shoot merged PN/Schottky diode or junction barrier Schottky (JBS) diode Feng Zhao, Bruce Odekirk 2010-12-14
7671410 Design and fabrication of rugged FRED, power MOSFET or IGBT Shanqi Zhao 2010-03-02
7169634 Design and fabrication of rugged FRED Shanqi Zhao 2007-01-30
5648283 High density power device fabrication process using undercut oxide sidewalls Dah W. Tsang, Douglas A. Pike, Jr., Theodore O. Meyer, John W. Mosier, II 1997-07-15
5528058 IGBT device with platinum lifetime control and reduced gaw Douglas A. Pike, Jr., Dah W. Tsang, James M. Katana 1996-06-18