JI

John W. Mosier, II

AT Advanced Power Technology: 6 patents #5 of 20Top 25%
📍 Bend, OR: #163 of 663 inventorsTop 25%
🗺 Oregon: #6,381 of 28,073 inventorsTop 25%
Overall (All Time): #887,940 of 4,157,543Top 25%
6
Patents All Time

Issued Patents All Time

Showing 1–6 of 6 patents

Patent #TitleCo-InventorsDate
5801417 Self-aligned power MOSFET device with recessed gate and source Dah W. Tsang, Douglas A. Pike, Jr., Theodore O. Meyer 1998-09-01
5648283 High density power device fabrication process using undercut oxide sidewalls Dah W. Tsang, Dumitru Sdrulla, Douglas A. Pike, Jr., Theodore O. Meyer 1997-07-15
5283201 High density power device fabrication process Dah W. Tsang, Douglas A. Pike, Jr., Theodore O. Meyer 1994-02-01
5045903 Topographic pattern delineated power MOSFET with profile tailored recessed source Theodore O. Meyer, Douglas A. Pike, Jr., Theodore G. Hollinger, Dah W. Tsang 1991-09-03
5019522 Method of making topographic pattern delineated power MOSFET with profile tailored recessed source Theodore O. Meyer, Douglas A. Pike, Jr., Theodore G. Hollinger, Dah W. Tsang 1991-05-28
4895810 Iopographic pattern delineated power mosfet with profile tailored recessed source Theodore O. Meyer, Douglas A. Pike, Jr., Theodore G. Hollinger 1990-01-23