Issued Patents All Time
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8110888 | Edge termination for high voltage semiconductor device | Jinshu Zhang, Dumitru Sdrulla | 2012-02-07 |
| 5801417 | Self-aligned power MOSFET device with recessed gate and source | John W. Mosier, II, Douglas A. Pike, Jr., Theodore O. Meyer | 1998-09-01 |
| 5648283 | High density power device fabrication process using undercut oxide sidewalls | Dumitru Sdrulla, Douglas A. Pike, Jr., Theodore O. Meyer, John W. Mosier, II | 1997-07-15 |
| 5528058 | IGBT device with platinum lifetime control and reduced gaw | Douglas A. Pike, Jr., James M. Katana, Dumitru Sdrulla | 1996-06-18 |
| 5283201 | High density power device fabrication process | John W. Mosier, II, Douglas A. Pike, Jr., Theodore O. Meyer | 1994-02-01 |
| 5283202 | IGBT device with platinum lifetime control having gradient or profile tailored platinum diffusion regions | Douglas A. Pike, Jr., James M. Katana, Dumitra Scrulla | 1994-02-01 |
| 5262336 | IGBT process to produce platinum lifetime control | Douglas A. Pike, Jr., James M. Katana | 1993-11-16 |
| 5045903 | Topographic pattern delineated power MOSFET with profile tailored recessed source | Theodore O. Meyer, John W. Mosier, II, Douglas A. Pike, Jr., Theodore G. Hollinger | 1991-09-03 |
| 5019522 | Method of making topographic pattern delineated power MOSFET with profile tailored recessed source | Theodore O. Meyer, John W. Mosier, II, Douglas A. Pike, Jr., Theodore G. Hollinger | 1991-05-28 |