BT

Brian L. Tessier

IBM: 13 patents #8,581 of 70,183Top 15%
AM AMD: 2 patents #3,994 of 9,279Top 45%
Lam Research: 1 patents #1,364 of 2,128Top 65%
Overall (All Time): #347,828 of 4,157,543Top 9%
14
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
10224414 Method for providing a low-k spacer Straford A. Wild 2019-03-05
8492803 Field effect device with reduced thickness gate Ricky S. Amos, Wesley C. Natzle, Siddhartha Panda 2013-07-23
7888738 Method of forming a guard ring or contact to an SOI substrate Amanda L. Tessier, Bryant C. Colwill 2011-02-15
7776695 Semiconductor device structure having low and high performance devices of same conductive type on same substrate John C. Arnold, Dureseti Chidambarrao, Ying Li, Rajeev Malik, Shreesh Narasimha +2 more 2010-08-17
7718514 Method of forming a guard ring or contact to an SOI substrate Amanda L. Tessier, Bryant C. Colwill 2010-05-18
7592245 Poly filled substrate contact on SOI structure David M. Dobuzinsky, Byeong Y. Kim, Effendi Leobandung, Munir D. Naeem 2009-09-22
7485521 Self-aligned dual stressed layers for NFET and PFET Huilong Zhu, Huicai Zhong 2009-02-03
7459382 Field effect device with reduced thickness gate Ricky S. Amos, Wesley C. Natzle, Siddhartha Panda 2008-12-02
7358172 Poly filled substrate contact on SOI structure David M. Dobuzinsky, Byeong Y. Kim, Effendi Leobandung, Munir D. Naeem 2008-04-15
7244644 Undercut and residual spacer prevention for dual stressed layers Huilong Zhu, Huicai Zhong, Ying Li 2007-07-17
6900519 Diffused extrinsic base and method for fabrication Marc W. Cantell, James S. Dunn, David L. Harame, Robb Johnson, Louis D. Lanzerotti +2 more 2005-05-31
6869854 Diffused extrinsic base and method for fabrication Marc W. Cantell, James S. Dunn, David L. Harame, Robb Johnson, Louis D. Lanzerotti +2 more 2005-03-22
6858903 MOSFET device with in-situ doped, raised source and drain structures Wesley C. Natzle, Marc W. Cantell, Louis D. Lanzerotti, Effendi Leobandung, Ryan Wuthrich 2005-02-22
6774000 Method of manufacture of MOSFET device with in-situ doped, raised source and drain structures Wesley C. Natzle, Marc W. Cantell, Louis D. Lanzerotti, Effendi Leobandung, Ryan Wuthrich 2004-08-10