Issued Patents All Time
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9746744 | Method for forming a self-aligned mach-zehnder interferometer | Jie Lin, Masaki Kato | 2017-08-29 |
| 9696604 | Method for forming a self-aligned Mach-Zehnder interferometer | Jie Lin, Masaki Kato | 2017-07-04 |
| 7713829 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Jack O. Chu, Douglas D. Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more | 2010-05-11 |
| 7173274 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Jack O. Chu, Douglas D. Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more | 2007-02-06 |
| 6900519 | Diffused extrinsic base and method for fabrication | Marc W. Cantell, James S. Dunn, David L. Harame, Louis D. Lanzerotti, Stephen A. St. Onge +2 more | 2005-05-31 |
| 6869854 | Diffused extrinsic base and method for fabrication | Marc W. Cantell, James S. Dunn, David L. Harame, Louis D. Lanzerotti, Stephen A. St. Onge +2 more | 2005-03-22 |
| 6815802 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Jack O. Chu, Douglass Duane Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more | 2004-11-09 |
| 6812545 | Epitaxial base bipolar transistor with raised extrinsic base | James S. Dunn, David L. Harame, Jeffrey B. Johnson, Louis D. Lanzerotti, Stephen A. St. Onge | 2004-11-02 |
| 6660664 | Structure and method for formation of a blocked silicide resistor | James W. Adkisson, Arne Ballantine, Matthew D. Gallagher, Peter J. Geiss, Jeffrey D. Gilbert +6 more | 2003-12-09 |
| 6617220 | Method for fabricating an epitaxial base bipolar transistor with raised extrinsic base | James S. Dunn, David L. Harame, Jeffrey B. Johnson, Louis D. Lanzerotti, Stephen A. St. Onge | 2003-09-09 |
| 6600199 | Deep trench-buried layer array and integrated device structures for noise isolation and latch up immunity | Steven H. Voldman, Louis D. Lanzerotti, Stephen A. St. Onge | 2003-07-29 |
| 6426265 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Jack O. Chu, Douglas D. Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more | 2002-07-30 |