Robb Johnson — 12 Patents at IBM

Robb Johnson has been granted 12 US patents while listed as an inventor at IBM. The first was granted in 2002 and the most recent in August 2017. Robb Johnson ranks #396,045 of 4,157,543 US inventors in our database (top 9.5%). Patent records list Robb Johnson in South Burlington, VT, US.

Issued Patents All Time

Showing 1–12 of 12 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
9746744	Method for forming a self-aligned mach-zehnder interferometer	Jie Lin, Masaki Kato	2017-08-29	$7,318,000
9696604	Method for forming a self-aligned Mach-Zehnder interferometer	Jie Lin, Masaki Kato	2017-07-04
7713829	Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology	Jack O. Chu, Douglas D. Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more	2010-05-11	$5,650,000
7173274	Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology	Jack O. Chu, Douglas D. Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more	2007-02-06	$8,225,000
6900519	Diffused extrinsic base and method for fabrication	Marc W. Cantell, James S. Dunn, David L. Harame, Louis D. Lanzerotti, Stephen A. St. Onge +2 more	2005-05-31	$8,494,000
6869854	Diffused extrinsic base and method for fabrication	Marc W. Cantell, James S. Dunn, David L. Harame, Louis D. Lanzerotti, Stephen A. St. Onge +2 more	2005-03-22	$9,449,000
6815802	Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology	Jack O. Chu, Douglass Duane Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more	2004-11-09	$4,707,000
6812545	Epitaxial base bipolar transistor with raised extrinsic base	James S. Dunn, David L. Harame, Jeffrey B. Johnson, Louis D. Lanzerotti, Stephen A. St. Onge	2004-11-02	$9,962,000
6660664	Structure and method for formation of a blocked silicide resistor	James W. Adkisson, Arne Ballantine, Matthew D. Gallagher, Peter J. Geiss, Jeffrey D. Gilbert +6 more	2003-12-09	$6,520,000
6617220	Method for fabricating an epitaxial base bipolar transistor with raised extrinsic base	James S. Dunn, David L. Harame, Jeffrey B. Johnson, Louis D. Lanzerotti, Stephen A. St. Onge	2003-09-09	$18,984,000
6600199	Deep trench-buried layer array and integrated device structures for noise isolation and latch up immunity	Steven H. Voldman, Louis D. Lanzerotti, Stephen A. St. Onge	2003-07-29	$10,466,000
6426265	Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology	Jack O. Chu, Douglas D. Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more	2002-07-30	$10,205,000

Robb Johnson — 12 Patents

Issued Patents All Time

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