Issued Patents All Time
Showing 25 most recent of 32 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8640077 | Capturing mutual coupling effects between an integrated circuit chip and chip package | Robert A. Groves, Wan-Sheng Ni, Jiansheng Xu | 2014-01-28 |
| 8466501 | Asymmetric silicon-on-insulator (SOI) junction field effect transistor (JFET) and a method of forming the asymmetrical SOI JFET | Douglas B. Hershberger, Richard A. Phelps, Robert M. Rassel, Michael J. Zierak | 2013-06-18 |
| 8030167 | Varied impurity profile region formation for varying breakdown voltage of devices | Douglas D. Coolbaugh, Louis D. Lanzerotti, Bradley A. Orner, Jay S. Rascoe, David C. Sheridan | 2011-10-04 |
| 7868423 | Optimized device isolation | John Benoit, David S. Collins, Natalie B. Feilchenfeld, Michael L. Gautsch, Xuefeng Liu +2 more | 2011-01-11 |
| 7709930 | Tuneable semiconductor device with discontinuous portions in the sub-collector | Andreas D. Stricker, David C. Sheridan, Jae-Sung Rieh, Gregory G. Freeman, Steven H. Voldman | 2010-05-04 |
| 7701015 | Bipolar and CMOS integration with reduced contact height | Zhong-Xiang He, Bradley A. Orner, Vidhya Ramachandran, Alvin J. Joseph, Ping-Chuan Wang | 2010-04-20 |
| 7550787 | Varied impurity profile region formation for varying breakdown voltage of devices | Douglas D. Coolbaugh, Louis D. Lanzerotti, Bradley A. Orner, Jay S. Rascoe, David C. Sheridan | 2009-06-23 |
| 7317240 | Redundant interconnect high current bipolar device and method of forming the device | Michael D. Hulvey | 2008-01-08 |
| 7253096 | Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same | Marwan H. Khater, James S. Dunn, David L. Harame, Alvin J. Joseph, Qizhi Liu +2 more | 2007-08-07 |
| 7002221 | Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same | Marwan H. Khater, James S. Dunn, David L. Harame, Alvin J. Joseph, Qizhi Liu +2 more | 2006-02-21 |
| 6998699 | Redundant interconnect high current bipolar device and method of forming the device | Michael D. Hulvey | 2006-02-14 |
| 6900519 | Diffused extrinsic base and method for fabrication | Marc W. Cantell, James S. Dunn, David L. Harame, Robb Johnson, Louis D. Lanzerotti +2 more | 2005-05-31 |
| 6869854 | Diffused extrinsic base and method for fabrication | Marc W. Cantell, James S. Dunn, David L. Harame, Robb Johnson, Louis D. Lanzerotti +2 more | 2005-03-22 |
| 6833299 | Method of fabricating a stacked poly-poly and MOS capacitor using a sige integration scheme | Douglas D. Coolbaugh, James S. Dunn | 2004-12-21 |
| 6812545 | Epitaxial base bipolar transistor with raised extrinsic base | James S. Dunn, David L. Harame, Jeffrey B. Johnson, Robb Johnson, Louis D. Lanzerotti | 2004-11-02 |
| 6657280 | Redundant interconnect high current bipolar device | Michael D. Hulvey | 2003-12-02 |
| 6635548 | Capacitor and method for forming same | Kerry Bernstein, Nicholas Theodore Schmidt, Anthony K. Stamper, Steven H. Voldman | 2003-10-21 |
| 6617220 | Method for fabricating an epitaxial base bipolar transistor with raised extrinsic base | James S. Dunn, David L. Harame, Jeffrey B. Johnson, Robb Johnson, Louis D. Lanzerotti | 2003-09-09 |
| 6600199 | Deep trench-buried layer array and integrated device structures for noise isolation and latch up immunity | Steven H. Voldman, Robb Johnson, Louis D. Lanzerotti | 2003-07-29 |
| 6597050 | Method of contacting a silicide-based schottky diode and diode so formed | James S. Dunn, Peter B. Gray, Kenneth Knetch Kieft, III, Nicholas Theodore Schmidt | 2003-07-22 |
| 6507063 | Poly-poly/MOS capacitor having a gate encapsulating first electrode layer | Douglas D. Coolbaugh, James S. Dunn | 2003-01-14 |
| 6476483 | Method and apparatus for cooling a silicon on insulator device | Eric Adler, James S. Dunn, Kent E. Morrett, Edward J. Nowak | 2002-11-05 |
| 6452251 | Damascene metal capacitor | Kerry Bernstein, Robert M. Geffken, Anthony K. Stamper | 2002-09-17 |
| 6448124 | Method for epitaxial bipolar BiCMOS | Douglas D. Coolbaugh, James S. Dunn, Peter J. Geiss, Peter B. Gray, David L. Harame +2 more | 2002-09-10 |
| 6440811 | Method of fabricating a poly-poly capacitor with a SiGe BiCMOS integration scheme | Douglas D. Coolbaugh, James S. Dunn | 2002-08-27 |