Issued Patents All Time
Showing 25 most recent of 45 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10535551 | Lateral PiN diodes and schottky diodes | Vibhor Jain, Qizhi Liu | 2020-01-14 |
| 10446644 | Device structures for a silicon-on-insulator substrate with a high-resistance handle wafer | Renata Camillo-Castillo, Hanyi Ding, Vibhor Jain, Anthony K. Stamper | 2019-10-15 |
| 10050115 | Tapered gate oxide in LDMOS devices | Brennan J. Brown, Max G. Levy, Santosh Sharma, Yun Shi, Michael J. Zierak | 2018-08-14 |
| 9947573 | Lateral PiN diodes and schottky diodes | Vibhor Jain, Qizhi Liu | 2018-04-17 |
| 9893157 | Structures with contact trenches and isolation trenches | Michael J. Zierak, Max G. Levy, BethAnn Lawrence | 2018-02-13 |
| 9799652 | Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of forming the structure | Michael J. Zierak, Theodore Letavic, Yun Shi, Santosh Sharma | 2017-10-24 |
| 9786606 | Semiconductor structures with isolated ohmic trenches and stand-alone isolation trenches and related method | BethAnn Lawrence, Yun Shi | 2017-10-10 |
| 9768028 | Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of forming the structure | Michael J. Zierak, Theodore Letavic, Yun Shi, Santosh Sharma | 2017-09-19 |
| 9595579 | Dual shallow trench isolation (STI) structure for field effect transistor (FET) | Max G. Levy, Richard A. Phelps, Santosh Sharma, Yun Shi, Michael J. Zierak | 2017-03-14 |
| 9324632 | Semiconductor structures with isolated ohmic trenches and stand-alone isolation trenches and related method | BethAnn Lawrence, Yun Shi | 2016-04-26 |
| 9202869 | Self-aligned bipolar junction transistor having self-planarizing isolation raised base structures | Qizhi Liu | 2015-12-01 |
| 9059276 | High voltage laterally diffused metal oxide semiconductor | Theodore Letavic, Richard A. Phelps, Santosh Sharma, Yun Shi, Michael J. Zierak | 2015-06-16 |
| 8946013 | Lateral diffusion field effect transistor with drain region self-aligned to gate electrode | Jeffrey P. Gambino, Xuefeng Liu, Benjamin T. Voegeli, Steven H. Voldman, Michael J. Zierak | 2015-02-03 |
| 8901710 | Interdigitated capacitors with a zero quadratic voltage coefficient of capacitance or zero linear temperature coefficient of capacitance | Frederick G. Anderson, Zhong-Xiang He, Theodore Letavic, Yves T. Ngu | 2014-12-02 |
| 8796108 | Isolated zener diode, an integrated circuit incorporating multiple instances of the zener diode, a method of forming the zener diode and a design structure for the zener diode | Frederick G. Anderson, David L. Harmon, Richard A. Phelps, Yun Shi, Michael J. Zierak | 2014-08-05 |
| 8525293 | Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration | Bradley A. Orner, Benjamin T. Voegeli | 2013-09-03 |
| 8492866 | Isolated Zener diode | Frederick G. Anderson, David L. Harmon, Richard A. Phelps, Yun Shi, Michael J. Zierak | 2013-07-23 |
| 8236662 | Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration | Bradley A. Orner, Benjamin T. Voegeli | 2012-08-07 |
| 8227318 | Integration of multiple gate oxides with shallow trench isolation methods to minimize divot formation | Max G. Levy, Richard A. Phelps, BethAnn Rainey, James A. Slinkman, Steven H. Voldman +7 more | 2012-07-24 |
| 8227849 | Method and structure for creation of a metal insulator metal capacitor | Ebenezer E. Eshun, Ronald J. Bolam, Douglas D. Coolbaugh, Keith E. Downes, Zhong-Xiang He | 2012-07-24 |
| 8114750 | Lateral diffusion field effect transistor with drain region self-aligned to gate electrode | Jeffrey P. Gambino, Xuefeng Liu, Benjamin T. Voegeli, Steven H. Voldman, Michael J. Zierak | 2012-02-14 |
| 7956412 | Lateral diffusion field effect transistor with a trench field plate | Jeffrey P. Gambino, Louis D. Lanzerotti, Benjamin T. Voegeli, Steven H. Voldman, Michael J. Zierak | 2011-06-07 |
| 7904868 | Structures including means for lateral current carrying capability improvement in semiconductor devices | Zhong-Xiang He, Qizhi Liu, BethAnn Rainey, Ping-Chuan Wang, Kimball M. Watson | 2011-03-08 |
| 7892910 | Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration | Bradley A. Orner, Benjamin T. Voegeli | 2011-02-22 |
| 7886240 | Modifying layout of IC based on function of interconnect and related circuit and design structure | James W. Adkisson, Jeffrey P. Gambino, Howard S. Landis, Benjamin T. Voegeli, Steven H. Voldman +1 more | 2011-02-08 |