Issued Patents All Time
Showing 1–25 of 25 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8987067 | Segmented guard ring structures with electrically insulated gap structures and design structures thereof | Robert L. Barry, Phillip F. Chapman, Jeffrey P. Gambino, Michael L. Gautsch, Mark D. Jaffe +1 more | 2015-03-24 |
| 8853043 | Silicon germanium (SiGe) heterojunction bipolar transistor (HBT) | Wade J. Hodge, Alvin J. Joseph, Rajendran Krishnasamy, Qizhi Liu | 2014-10-07 |
| 8592293 | Schottky barrier diodes for millimeter wave SiGe BiCMOS applications | Jeffrey B. Johnson, Xuefeng Liu, Robert M. Rassel | 2013-11-26 |
| 8525293 | Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration | Natalie B. Feilchenfeld, Benjamin T. Voegeli | 2013-09-03 |
| 8421478 | Radio frequency integrated circuit with on-chip noise source for self-test | Brian A. Floyd, David R. Greenberg, Ramana Malladi, Scott K. Reynolds | 2013-04-16 |
| 8338265 | Silicided trench contact to buried conductive layer | Douglas D. Coolbaugh, Jeffrey B. Johnson, Peter J. Lindgren, Xuefeng Liu, James S. Nakos +2 more | 2012-12-25 |
| 8299500 | Silicon germanium heterojunction bipolar transistor having interstitial trapping layer in base region | Wade J. Hodge, Alvin J. Joseph, Rajendran Krishnasamy, Qizhi Liu | 2012-10-30 |
| 8288244 | Lateral passive device having dual annular electrodes | David S. Collins, Jeffrey B. Johnson, Xuefeng Liu, Robert M. Rassel, David C. Sheridan | 2012-10-16 |
| 8236662 | Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration | Natalie B. Feilchenfeld, Benjamin T. Voegeli | 2012-08-07 |
| 8217497 | FIN differential MOS varactor diode | Edward J. Nowak, Robert M. Rassel | 2012-07-10 |
| 8105924 | Deep trench based far subcollector reachthrough | Robert M. Rassel, David C. Sheridan, Steven H. Voldman | 2012-01-31 |
| 8030167 | Varied impurity profile region formation for varying breakdown voltage of devices | Douglas D. Coolbaugh, Louis D. Lanzerotti, Jay S. Rascoe, David C. Sheridan, Stephen A. St. Onge | 2011-10-04 |
| 7936041 | Schottky barrier diodes for millimeter wave SiGe BICMOS applications | Jeffrey B. Johnson, Xuefeng Liu, Robert M. Rassel | 2011-05-03 |
| 7892910 | Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration | Natalie B. Feilchenfeld, Benjamin T. Voegeli | 2011-02-22 |
| 7888745 | Bipolar transistor with dual shallow trench isolation and low base resistance | Marwan H. Khater, Andreas D. Stricker, Mattias E. Dahlstrom | 2011-02-15 |
| 7821097 | Lateral passive device having dual annular electrodes | David S. Collins, Jeffrey B. Johnson, Xuefeng Liu, Robert M. Rassel, David C. Sheridan | 2010-10-26 |
| 7701015 | Bipolar and CMOS integration with reduced contact height | Zhong-Xiang He, Vidhya Ramachandran, Alvin J. Joseph, Stephen A. St. Onge, Ping-Chuan Wang | 2010-04-20 |
| 7691734 | Deep trench based far subcollector reachthrough | Robert M. Rassel, David C. Sheridan, Steven H. Voldman | 2010-04-06 |
| 7625792 | Method of base formation in a BiCMOS process | Peter J. Geiss, Alvin J. Joseph, Qizhi Liu | 2009-12-01 |
| 7550787 | Varied impurity profile region formation for varying breakdown voltage of devices | Douglas D. Coolbaugh, Louis D. Lanzerotti, Jay S. Rascoe, David C. Sheridan, Stephen A. St. Onge | 2009-06-23 |
| 7381997 | Lateral silicided diodes | Douglas D. Coolbaugh, Jeffrey B. Johnson, Xuefeng Liu, Robert M. Rassel, David C. Sheridan | 2008-06-03 |
| 7335927 | Lateral silicided diodes | Douglas D. Coolbaugh, Jeffrey B. Johnson, Xuefeng Liu, Robert M. Rassel, David C. Sheridan | 2008-02-26 |
| 7326987 | Non-continuous encapsulation layer for MIM capacitor | Wagdi W. Abadeer, Eric Adler, Zhong-Xiang He, Vidhya Ramachandran, Barbara Waterhouse +1 more | 2008-02-05 |
| 6913965 | Non-Continuous encapsulation layer for MIM capacitor | Wagdi W. Abadeer, Eric Adler, Zhong-Xiang He, Vidhya Ramachandran, Barbara Waterhouse +1 more | 2005-07-05 |
| 6911681 | Method of base formation in a BiCMOS process | Peter J. Geiss, Alvin J. Joseph, Qizhi Liu | 2005-06-28 |