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Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structure |
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Method of base formation in a BiCMOS process |
Alvin J. Joseph, Qizhi Liu, Bradley A. Orner |
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Peter B. Gray, Alvin J. Joseph, Qizhi Liu |
2009-02-17 |
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Methods of base formation in a BiCMOS process |
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2008-06-24 |
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SiGe heterojunction bipolar transistor (HBT) |
Alvin J. Joseph, Rajendran Krishnasamy, Xuefeng Liu |
2008-01-08 |
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Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structures |
Joseph R. Greco, Richard S. Kontra, Emily Lanning |
2007-07-24 |
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Method of collector formation in BiCMOS technology |
Peter B. Gray, Alvin J. Joseph, Qizhi Liu |
2006-02-21 |
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Silicon dioxide removing method |
Alvin J. Joseph, Xuefeng Liu, James S. Nakos, James J. Quinlivan |
2005-11-22 |
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2005-11-15 |
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STI pull-down to control SiGe facet growth |
Douglas D. Coolbaugh, Mark D. Dupuis, Matthew D. Gallagher, Brett A. Philips |
2005-08-30 |
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Method of base formation in a BiCMOS process |
Alvin J. Joseph, Qizhi Liu, Bradley A. Orner |
2005-06-28 |
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Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structures |
Joseph R. Greco, Richard S. Kontra, Emily Lanning |
2004-01-27 |
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Sti pull-down to control SiGe facet growth |
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2004-01-06 |
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Structure and method for formation of a blocked silicide resistor |
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2003-12-09 |
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Method of fabricating a bipolar transistor having a realigned emitter |
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2003-04-01 |
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2002-09-10 |
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MOSCAP design for improved reliability |
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2002-07-16 |
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Shrink-wrap collar for DRAM deep trenches |
Howard S. Landis, Son V. Nguyen |
2002-06-04 |
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Dislocation suppression by carbon incorporation |
James S. Dunn, Stephen A. St. Onge |
2001-07-10 |
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Shrink-wrap collar from DRAM deep trenches |
Howard S. Landis, Son V. Nguyen |
2000-05-30 |
| 5635419 |
Porous silicon trench and capacitor structures |
Donald M. Kenney |
1997-06-03 |
| 5508542 |
Porous silicon trench and capacitor structures |
Donald M. Kenney |
1996-04-16 |
| 5356837 |
Method of making epitaxial cobalt silicide using a thin metal underlayer |
Thomas J. Licata, Herbert L. Ho, James G. Ryan |
1994-10-18 |
