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Noble gas implantation region in top silicon layer of semiconductor-on-insulator substrate |
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Integration of multiple gate oxides with shallow trench isolation methods to minimize divot formation |
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Simultaneously formed isolation trench and through-box contact for silicon-on-insulator technology |
Alan B. Botula, Daniel S. Vanslette |
2011-09-20 |
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Kerry Bernstein, Edward J. Nowak |
2011-06-21 |
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Natalie B. Feilchenfeld, Zhong-Xiang He, Qizhi Liu, Ping-Chuan Wang, Kimball M. Watson |
2011-03-08 |
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Selectable device options for characterizing semiconductor devices |
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2010-10-12 |
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2010-08-17 |
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Brent A. Anderson, Edward J. Nowak |
2010-05-04 |
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Brent A. Anderson, Matthew J. Breitwisch, Edward J. Nowak |
2010-04-20 |
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2008-12-30 |
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Methods for lateral current carrying capability improvement in semiconductor devices |
Natalie B. Feilchenfeld, Zhong-Xiang He, Qizhi Liu, Ping-Chuan Wang, Kimball M. Watson |
2008-11-18 |
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2008-05-06 |
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2007-10-30 |
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Method of base formation in a BiCMOS process |
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2005-10-11 |
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2005-06-21 |
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2005-05-03 |
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2005-03-22 |
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2004-09-21 |
