| 8778737 |
Flattened substrate surface for substrate bonding |
Edward C. Cooney, III, James S. Dunn, Dale W. Martin, Charles F. Musante, Leathen Shi +2 more |
2014-07-15 |
$5,287,000 |
| 8748285 |
Noble gas implantation region in top silicon layer of semiconductor-on-insulator substrate |
Alan B. Botula, William F. Clark, Jr., Richard A. Phelps, Yun Shi, James A. Slinkman |
2014-06-10 |
$4,765,000 |
| 8227318 |
Integration of multiple gate oxides with shallow trench isolation methods to minimize divot formation |
Max G. Levy, Natalie B. Feilchenfeld, Richard A. Phelps, James A. Slinkman, Steven H. Voldman +7 more |
2012-07-24 |
$4,383,000 |
| 8021943 |
Simultaneously formed isolation trench and through-box contact for silicon-on-insulator technology |
Alan B. Botula, Daniel S. Vanslette |
2011-09-20 |
$5,575,000 |
| 7964466 |
FinFET transistor and circuit |
Kerry Bernstein, Edward J. Nowak |
2011-06-21 |
$7,220,000 |
| 7904868 |
Structures including means for lateral current carrying capability improvement in semiconductor devices |
Natalie B. Feilchenfeld, Zhong-Xiang He, Qizhi Liu, Ping-Chuan Wang, Kimball M. Watson |
2011-03-08 |
$4,587,000 |
| 7814454 |
Selectable device options for characterizing semiconductor devices |
Anthony I. Chou, James S. Dunn, Brian M. Dufrene, Christopher H. Lumbra, Shreesh Narasimha +2 more |
2010-10-12 |
$6,128,000 |
| 7777276 |
FinFET transistor and circuit |
Kerry Bernstein, Edward J. Nowak |
2010-08-17 |
$4,695,000 |
| 7709892 |
Semiconductor device having freestanding semiconductor layer |
Brent A. Anderson, Edward J. Nowak |
2010-05-04 |
$4,679,000 |
| 7700446 |
Virtual body-contacted trigate |
Brent A. Anderson, Matthew J. Breitwisch, Edward J. Nowak |
2010-04-20 |
$4,962,000 |
| 7470578 |
Method of making a finFET having suppressed parasitic device characteristics |
Edward J. Nowak |
2008-12-30 |
$5,097,000 |
| 7453151 |
Methods for lateral current carrying capability improvement in semiconductor devices |
Natalie B. Feilchenfeld, Zhong-Xiang He, Qizhi Liu, Ping-Chuan Wang, Kimball M. Watson |
2008-11-18 |
$4,805,000 |
| 7390721 |
Methods of base formation in a BiCMOS process |
Peter J. Geiss, Marwan H. Khater, Qizhi Liu, Randy W. Mann, Robert J. Purtell +2 more |
2008-06-24 |
$7,053,000 |
| 7368355 |
FinFET transistor and circuit |
Kerry Bernstein, Edward J. Nowak |
2008-05-06 |
$12,943,000 |
| 7288802 |
Virtual body-contacted trigate |
Brent A. Anderson, Matthew J. Breitwisch, Edward J. Nowak |
2007-10-30 |
$4,304,000 |
| 7115920 |
FinFET transistor and circuit |
Kerry Bernstein, Edward J. Nowak |
2006-10-03 |
$4,350,000 |
| 7087506 |
Method of forming freestanding semiconductor layer |
Brent A. Anderson, Edward J. Nowak |
2006-08-08 |
$2,377,000 |
| 6992354 |
FinFET having suppressed parasitic device characteristics |
Edward J. Nowak |
2006-01-31 |
$6,009,000 |
| 6965133 |
Method of base formation in a BiCMOS process |
Peter J. Geiss, Marwan H. Khater, Qizhi Liu, Randy W. Mann, Robert J. Purtell +2 more |
2005-11-15 |
$8,461,000 |
| 6953726 |
High-density split-gate FinFET |
Edward J. Nowak |
2005-10-11 |
$11,788,000 |
| 6909147 |
Multi-height FinFETS |
Ingo Aller, Joachim Keinert, Thomas Ludwig, Edward J. Nowak |
2005-06-21 |
$6,933,000 |
| 6888199 |
High-density split-gate FinFET |
Edward J. Nowak |
2005-05-03 |
$8,163,000 |
| 6869852 |
Self-aligned raised extrinsic base bipolar transistor structure and method |
Alvin J. Joseph, Qizhi Liu, Kathryn T. Schonenberg |
2005-03-22 |
$9,449,000 |
| 6794718 |
High mobility crystalline planes in double-gate CMOS technology |
Edward J. Nowak |
2004-09-21 |
$8,100,000 |
