| 10224225 |
Centering substrates on a chuck |
Shawn A. Adderly, Samantha D. DiStefano, Jeffrey P. Gambino, Max L. Lifson, Matthew D. Moon +1 more |
2019-03-05 |
$2,050,000 |
| 10050115 |
Tapered gate oxide in LDMOS devices |
Brennan J. Brown, Natalie B. Feilchenfeld, Santosh Sharma, Yun Shi, Michael J. Zierak |
2018-08-14 |
$10,336,000 |
| 9997385 |
Centering substrates on a chuck |
Shawn A. Adderly, Samantha D. DiStefano, Jeffrey P. Gambino, Max L. Lifson, Matthew D. Moon +1 more |
2018-06-12 |
$1,886,000 |
| 9893157 |
Structures with contact trenches and isolation trenches |
Natalie B. Feilchenfeld, Michael J. Zierak, BethAnn Lawrence |
2018-02-13 |
$9,248,000 |
| 9825119 |
Semiconductor device with metal extrusion formation |
Gary L. Milo, David C. Thomas |
2017-11-21 |
$3,803,000 |
| 9825120 |
Semiconductor device with metal extrusion formation |
Gary L. Milo, David C. Thomas |
2017-11-21 |
$3,803,000 |
| 9685362 |
Apparatus and method for centering substrates on a chuck |
Shawn A. Adderly, Samantha D. DiStefano, Jeffrey P. Gambino, Max L. Lifson, Matthew D. Moon +1 more |
2017-06-20 |
$2,315,000 |
| 9595579 |
Dual shallow trench isolation (STI) structure for field effect transistor (FET) |
Natalie B. Feilchenfeld, Richard A. Phelps, Santosh Sharma, Yun Shi, Michael J. Zierak |
2017-03-14 |
$17,823,000 |
| 9548349 |
Semiconductor device with metal extrusion formation |
Gary L. Milo, David C. Thomas |
2017-01-17 |
$4,498,000 |
| 9508578 |
Method and apparatus for detecting foreign material on a chuck |
Shawn A. Adderly, Samantha D. DiStefano, Jeffrey P. Gambino, Max L. Lifson, Jed H. Rankin +1 more |
2016-11-29 |
$4,439,000 |
| 9484301 |
Controlled metal extrusion opening in semiconductor structure and method of forming |
Gary L. Milo, Matthew D. Moon, Anthony C. Speranza, Timothy D. Sullivan, David C. Thomas +1 more |
2016-11-01 |
$4,589,000 |
| 9337310 |
Low leakage, high frequency devices |
Theodore Letavic, Santosh Sharma, Yun Shi |
2016-05-10 |
$1,020,000 |
| 9059258 |
Controlled metal extrusion opening in semiconductor structure and method of forming |
Gary L. Milo, Matthew D. Moon, Anthony C. Speranza, Timothy D. Sullivan, David C. Thomas +1 more |
2015-06-16 |
$2,098,000 |
| 8709903 |
Silicon-on-insulator (SOI) structure configured for reduced harmonics and method of forming the structure |
Alan B. Botula, John J. Ellis-Monaghan, Alvin J. Joseph, Richard A. Phelps, James A. Slinkman +1 more |
2014-04-29 |
$5,775,000 |
| 8698244 |
Silicon-on-insulator (SOI) structure configured for reduced harmonics, design structure and method |
Alan B. Botula, John J. Ellis-Monaghan, Alvin J. Joseph, Richard A. Phelps, James A. Slinkman +1 more |
2014-04-15 |
$9,702,000 |
| 8564067 |
Silicon-on-insulator (SOI) structure configured for reduced harmonics and method of forming the structure |
Alan B. Botula, John J. Ellis-Monaghan, Alvin J. Joseph, Richard A. Phelps, James A. Slinkman +1 more |
2013-10-22 |
$5,163,000 |
| 8487379 |
Structure and method for buried inductors for ultra-high resistivity wafers for SOI/RF SiGe applications |
Steven H. Voldman |
2013-07-16 |
$5,283,000 |
| 8471340 |
Silicon-on-insulator (SOI) structure configured for reduced harmonics and method of forming the structure |
Alan B. Botula, John J. Ellis-Monaghan, Alvin J. Joseph, Richard A. Phelps, James A. Slinkman +1 more |
2013-06-25 |
$6,528,000 |
| 8227318 |
Integration of multiple gate oxides with shallow trench isolation methods to minimize divot formation |
Natalie B. Feilchenfeld, Richard A. Phelps, BethAnn Rainey, James A. Slinkman, Steven H. Voldman +7 more |
2012-07-24 |
$4,383,000 |
| 8188570 |
Structure and method for buried inductors for ultra-high resistivity wafers for SOI/RF SiGe applications |
Steven H. Voldman |
2012-05-29 |
$10,419,000 |
| 7939896 |
SOI substrate contact with extended silicide area |
Dinh Dang, Thai Doan, Jessica A. Levy, Alan Frederick Norris, James A. Slinkman |
2011-05-10 |
$6,699,000 |
| 7883990 |
High resistivity SOI base wafer using thermally annealed substrate |
Dale W. Martin, Gerd Pfeiffer, James A. Slinkman |
2011-02-08 |
$4,016,000 |
| 7842580 |
Structure and method for buried inductors for ultra-high resistivity wafers for SOI/RF SiGe applications |
Steven H. Voldman |
2010-11-30 |
$3,507,000 |
| 7772083 |
Trench forming method and structure |
Alan B. Botula, Michael L. Gautsch, Alvin J. Joseph, James A. Slinkman |
2010-08-10 |
$5,029,000 |
| 7675121 |
SOI substrate contact with extended silicide area |
Dinh Dang, Thai Doan, Jessica A. Levy, Alan Frederick Norris, James A. Slinkman |
2010-03-09 |
$6,686,000 |
