ML

Max G. Levy

IBM: 34 patents #2,873 of 70,183Top 5%
Globalfoundries: 6 patents #578 of 4,424Top 15%
SA Siemens Aktiengesellschaft: 6 patents #2,149 of 22,248Top 10%
KT Kabushiki Kaisha Toshiba: 1 patents #13,537 of 21,451Top 65%
📍 South Burlington, VT: #48 of 1,136 inventorsTop 5%
🗺 Vermont: #161 of 4,968 inventorsTop 4%
Overall (All Time): #76,566 of 4,157,543Top 2%
41
Patents All Time

Issued Patents All Time

Showing 26–41 of 41 patents

Patent #TitleCo-InventorsDate
7485965 Through via in ultra high resistivity wafer and related methods Louis D. Lanzerotti, Yun Shi, Steven H. Voldman 2009-02-03
7239376 Method and apparatus for correcting gravitational sag in photomasks used in the production of electronic devices Michael S. Hibbs, Kenneth Racette 2007-07-03
6812122 Method for forming a voltage programming element Claude L. Bertin, Erik L. Hedberg, Russell J. Houghton, Rick L. Mohler, William R. Tonti +1 more 2004-11-02
6633055 Electronic fuse structure and method of manufacturing Claude L. Bertin, Erik L. Hedberg, Timothy D. Sullivan, William R. Tonti 2003-10-14
6518145 Methods to control the threshold voltage of a deep trench corner device Johann Alsmeier, George R. Goth, Victor R. Nastasi, James A. O'Neill, Paul C. Parries 2003-02-11
6483172 Semiconductor device structure with hydrogen-rich layer for facilitating passivation of surface states Donna R. Cote, William J. Cote, Son V. Nguyen, Markus Kirchhoff, Manfred Hauf 2002-11-19
6388305 Electrically programmable antifuses and methods for forming the same Claude L. Bertin, Erik L. Hedberg, Russell J. Houghton, Rick L. Mohler, William R. Tonti +1 more 2002-05-14
6372573 Self-aligned trench capacitor capping process for high density DRAM cells Masami Aoki, Hirofumi Inoue, Bruce W. Porth, Victor R. Nastasi, Emily E. Fisch +1 more 2002-04-16
6361402 Method for planarizing photoresist Donald F. Canaperi, Rangarajan Jagannathan, Mahadevaiyer Krishnan, Uma Satyendra, Matthew Sendelbach +2 more 2002-03-26
6121106 Method for forming an integrated trench capacitor Wayne F. Ellis, Russell J. Houghton, William R. Tonti 2000-09-19
6103592 Manufacturing self-aligned polysilicon fet devices isolated with maskless shallow trench isolation and gate conductor fill technology with active devices and dummy doped regions formed in mesas Bernhard Fiegl, Walter Glashauser, Frank Prein 2000-08-15
5976982 Methods for protecting device components from chemical mechanical polish induced defects Wolfgang Bergner, Bernhard Fiegl, George R. Goth, Paul C. Parries, Matthew Sendelbach +3 more 1999-11-02
5824580 Method of manufacturing an insulated gate field effect transistor Manfred Hauf, Victor R. Nastasi 1998-10-20
5804490 Method of filling shallow trenches Bernhard Fiegl, Walter Glashauser, Victor R. Nastasi 1998-09-08
5757059 Insulated gate field effect transistor Manfred Hauf, Victor R. Nastasi 1998-05-26
5721448 Integrated circuit chip having isolation trenches composed of a dielectric layer with oxidation catalyst material Manfred Hauf, Victor R. Nastasi 1998-02-24