Issued Patents All Time
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6943810 | Layered article data verification | Mark C. H. Lamorey | 2005-09-13 |
| 6812122 | Method for forming a voltage programming element | Claude L. Bertin, Erik L. Hedberg, Russell J. Houghton, Max G. Levy, William R. Tonti +1 more | 2004-11-02 |
| 6388305 | Electrically programmable antifuses and methods for forming the same | Claude L. Bertin, Erik L. Hedberg, Russell J. Houghton, Max G. Levy, William R. Tonti +1 more | 2002-05-14 |
| 6373091 | Vertical DRAM cell with TFT over trench capacitor | David V. Horak, Gorden Seth Starkey, Jr. | 2002-04-16 |
| 6328794 | Method of controlling stress in a film | Donald W. Brouillette, Timothy C. Krywanczyk, Jerome B. Lasky, Wolfgang Rauscher | 2001-12-11 |
| 6258689 | Low resistance fill for deep trench capacitor | Gary B. Bronner, Jeffrey P. Gambino, Jack A. Mandelman, Carl Radens, William R. Tonti | 2001-07-10 |
| 6228706 | Vertical DRAM cell with TFT over trench capacitor | David V. Horak, Gorden Seth Starkey, Jr. | 2001-05-08 |
| 6022796 | Geometrical control of device corner threshold | Wayne S. Berry, Juergen Faul, Wilfried E. Haensch | 2000-02-08 |
| 5998852 | Geometrical control of device corner threshold | Wayne S. Berry, Juergen Faul, Wilfried E. Haensch | 1999-12-07 |
| 5913125 | Method of controlling stress in a film | Donald W. Brouillette, Timothy C. Krywanczyk, Jerome B. Lasky, Wolfgang Rauscher | 1999-06-15 |
| 5858866 | Geometrical control of device corner threshold | Wayne S. Berry, Juergen Faul, Wilfried E. Haensch | 1999-01-12 |
| 4983544 | Silicide bridge contact process | Nicky C. Lu, Brian J. Machesney, Glen L. Miles, Chung-Yu Ting, Stephen D. Warley | 1991-01-08 |
| 4873205 | Method for providing silicide bridge contact between silicon regions separated by a thin dielectric | Dale L. Critchlow, John K. DeBrosse, Wendell P. Noble, Paul C. Parries | 1989-10-10 |
| 4600445 | Process for making self aligned field isolation regions in a semiconductor substrate | Robert Hörr | 1986-07-15 |