RM

Rick L. Mohler

IBM: 14 patents #8,004 of 70,183Top 15%
SA Siemens Aktiengesellschaft: 1 patents #10,653 of 22,248Top 50%
Overall (All Time): #356,155 of 4,157,543Top 9%
14
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
6943810 Layered article data verification Mark C. H. Lamorey 2005-09-13
6812122 Method for forming a voltage programming element Claude L. Bertin, Erik L. Hedberg, Russell J. Houghton, Max G. Levy, William R. Tonti +1 more 2004-11-02
6388305 Electrically programmable antifuses and methods for forming the same Claude L. Bertin, Erik L. Hedberg, Russell J. Houghton, Max G. Levy, William R. Tonti +1 more 2002-05-14
6373091 Vertical DRAM cell with TFT over trench capacitor David V. Horak, Gorden Seth Starkey, Jr. 2002-04-16
6328794 Method of controlling stress in a film Donald W. Brouillette, Timothy C. Krywanczyk, Jerome B. Lasky, Wolfgang Rauscher 2001-12-11
6258689 Low resistance fill for deep trench capacitor Gary B. Bronner, Jeffrey P. Gambino, Jack A. Mandelman, Carl Radens, William R. Tonti 2001-07-10
6228706 Vertical DRAM cell with TFT over trench capacitor David V. Horak, Gorden Seth Starkey, Jr. 2001-05-08
6022796 Geometrical control of device corner threshold Wayne S. Berry, Juergen Faul, Wilfried E. Haensch 2000-02-08
5998852 Geometrical control of device corner threshold Wayne S. Berry, Juergen Faul, Wilfried E. Haensch 1999-12-07
5913125 Method of controlling stress in a film Donald W. Brouillette, Timothy C. Krywanczyk, Jerome B. Lasky, Wolfgang Rauscher 1999-06-15
5858866 Geometrical control of device corner threshold Wayne S. Berry, Juergen Faul, Wilfried E. Haensch 1999-01-12
4983544 Silicide bridge contact process Nicky C. Lu, Brian J. Machesney, Glen L. Miles, Chung-Yu Ting, Stephen D. Warley 1991-01-08
4873205 Method for providing silicide bridge contact between silicon regions separated by a thin dielectric Dale L. Critchlow, John K. DeBrosse, Wendell P. Noble, Paul C. Parries 1989-10-10
4600445 Process for making self aligned field isolation regions in a semiconductor substrate Robert Hörr 1986-07-15