Issued Patents All Time
Showing 25 most recent of 33 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11417525 | Multiple patterning with mandrel cuts defined by block masks | Martin O'Toole, Keith Donegan, Brendan O'Brien, Hsueh-Chung Chen, Terry A. Spooner +4 more | 2022-08-16 |
| 8030167 | Varied impurity profile region formation for varying breakdown voltage of devices | Douglas D. Coolbaugh, Bradley A. Orner, Jay S. Rascoe, David C. Sheridan, Stephen A. St. Onge | 2011-10-04 |
| 8022496 | Semiconductor structure and method of manufacture | Douglas D. Coolbaugh, Alvin J. Joseph, Seong-Dong Kim, Xuefeng Liu, Robert M. Rassel | 2011-09-20 |
| 7956412 | Lateral diffusion field effect transistor with a trench field plate | Natalie B. Feilchenfeld, Jeffrey P. Gambino, Benjamin T. Voegeli, Steven H. Voldman, Michael J. Zierak | 2011-06-07 |
| 7713829 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Jack O. Chu, Douglas D. Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more | 2010-05-11 |
| 7550787 | Varied impurity profile region formation for varying breakdown voltage of devices | Douglas D. Coolbaugh, Bradley A. Orner, Jay S. Rascoe, David C. Sheridan, Stephen A. St. Onge | 2009-06-23 |
| 7491614 | Methods for forming channel stop for deep trench isolation prior to deep trench etch | Stephen A. St Onge | 2009-02-17 |
| 7485965 | Through via in ultra high resistivity wafer and related methods | Max G. Levy, Yun Shi, Steven H. Voldman | 2009-02-03 |
| 7374988 | NFET and PFET devices and methods of fabricating same | Brent A. Anderson, Edward J. Nowak | 2008-05-20 |
| 7329940 | Semiconductor structure and method of manufacture | Douglas D. Coolbaugh, Alvin J. Joseph, Seong-Dong Kim, Xuefeng Liu, Robert M. Rassel | 2008-02-12 |
| 7303968 | Semiconductor device and method having multiple subcollectors formed on a common wafer | James S. Dunn, Steven H. Voldman | 2007-12-04 |
| 7202136 | Silicon germanium heterojunction bipolar transistor with carbon incorporation | Brian P. Ronan, Steven H. Voldman | 2007-04-10 |
| 7173274 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Jack O. Chu, Douglas D. Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more | 2007-02-06 |
| 7138669 | Silicon germanium heterojunction bipolar transistor with carbon incorporation | Brian P. Ronan, Steven H. Voldman | 2006-11-21 |
| 7078722 | NFET and PFET devices and methods of fabricating same | Brent A. Anderson, Edward J. Nowak | 2006-07-18 |
| 7064416 | Semiconductor device and method having multiple subcollectors formed on a common wafer | James S. Dunn, Steven H. Voldman | 2006-06-20 |
| 6900519 | Diffused extrinsic base and method for fabrication | Marc W. Cantell, James S. Dunn, David L. Harame, Robb Johnson, Stephen A. St. Onge +2 more | 2005-05-31 |
| 6869854 | Diffused extrinsic base and method for fabrication | Marc W. Cantell, James S. Dunn, David L. Harame, Robb Johnson, Stephen A. St. Onge +2 more | 2005-03-22 |
| 6858532 | Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling | Wesley C. Natzle, David C. Ahlgren, Steven G. Barbee, Marc W. Cantell, Basanth Jagannathan +2 more | 2005-02-22 |
| 6858903 | MOSFET device with in-situ doped, raised source and drain structures | Wesley C. Natzle, Marc W. Cantell, Effendi Leobandung, Brian L. Tessier, Ryan Wuthrich | 2005-02-22 |
| 6849884 | Strained Fin FETs structure and method | William F. Clark, Jr., David M. Fried, Edward J. Nowak | 2005-02-01 |
| 6815802 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Jack O. Chu, Douglass Duane Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more | 2004-11-09 |
| 6812545 | Epitaxial base bipolar transistor with raised extrinsic base | James S. Dunn, David L. Harame, Jeffrey B. Johnson, Robb Johnson, Stephen A. St. Onge | 2004-11-02 |
| 6774000 | Method of manufacture of MOSFET device with in-situ doped, raised source and drain structures | Wesley C. Natzle, Marc W. Cantell, Effendi Leobandung, Brian L. Tessier, Ryan Wuthrich | 2004-08-10 |
| 6767793 | Strained fin FETs structure and method | William F. Clark, Jr., David M. Fried, Edward J. Nowak | 2004-07-27 |