Issued Patents All Time
Showing 1–24 of 24 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11916384 | Region-based power grid generation through modification of an initial power grid based on timing analysis | David Wolpert, Michael H. Wood, Leon Sigal, James Leland, Alexander J. Suess +2 more | 2024-02-27 |
| 9754071 | Integrated circuit (IC) design analysis and feature extraction | Haraprasad Nanjundappa, Laura S. Chadwick, Dureseti Chidambarrao, Christopher V. Baiocco | 2017-09-05 |
| 8829572 | Structure and layout of a FET prime cell | John J. Pekarik, Christopher M. Schnabel | 2014-09-09 |
| 8187930 | Structure and layout of a FET prime cell | John J. Pekarik, Christopher M. Schnabel | 2012-05-29 |
| 7741857 | System and method for de-embedding a device under test employing a parametrized netlist | Zhenrong Jin, Hongmei Li | 2010-06-22 |
| 7713829 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Jack O. Chu, Douglas D. Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more | 2010-05-11 |
| 7355221 | Field effect transistor having an asymmetrically stressed channel region | Gregory G. Freeman, Anil K. Chinthakindi, David R. Greenberg, Marwan H. Khater, John J. Pekarik +1 more | 2008-04-08 |
| 7183576 | Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD | Jack O. Chu, Alfred Grill, Bernard S. Meyerson, John A. Ott | 2007-02-27 |
| 7173274 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Jack O. Chu, Douglas D. Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more | 2007-02-06 |
| 6927476 | Bipolar device having shallow junction raised extrinsic base and method for making the same | Gregory G. Freeman, Seshadri Subbanna, Kathryn T. Schonenberg, Shwu-Jen Jeng, Kenneth J. Stein +1 more | 2005-08-09 |
| 6908866 | Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD | Jack O. Chu, Alfred Grill, Bernard S. Meyerson, John A. Ott | 2005-06-21 |
| 6881259 | In-situ monitoring and control of germanium profile in silicon-germanium alloy films and temperature monitoring during deposition of silicon films | David C. Ahlgren, Jack O. Chu, Ryan Wuthrich | 2005-04-19 |
| 6875279 | Single reactor, multi-pressure chemical vapor deposition for semiconductor devices | Jack O. Chu, Ryan Wuthrich | 2005-04-05 |
| 6858532 | Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling | Wesley C. Natzle, David C. Ahlgren, Steven G. Barbee, Marc W. Cantell, Louis D. Lanzerotti +2 more | 2005-02-22 |
| 6815802 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Jack O. Chu, Douglass Duane Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more | 2004-11-09 |
| 6787427 | Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics | David R. Greenberg, Shwu-Jen Jeng, Joseph T. Kocis, Samuel C. Ramac, David M. Rockwell | 2004-09-07 |
| 6780735 | Method to increase carbon and boron doping concentrations in Si and SiGe films | Jack O. Chu, Ryan Wuthrich, Byeongju Park | 2004-08-24 |
| 6780695 | BiCMOS integration scheme with raised extrinsic base | Huajie Chen, Seshadri Subbanna, Gregory G. Freeman, David C. Ahlgren, David Angell +3 more | 2004-08-24 |
| 6750119 | Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD | Jack O. Chu, Alfred Grill, Bernard S. Meyerson, John A. Ott | 2004-06-15 |
| 6744079 | Optimized blocking impurity placement for SiGe HBTs | Alvin J. Joseph, Xuefeng Liu, Kathryn T. Schonenberg, Ryan Wuthrich | 2004-06-01 |
| 6660607 | Method for fabricating heterojunction bipolar transistors | — | 2003-12-09 |
| 6656809 | Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics | David R. Greenberg, Shwu-Jen Jeng, Joseph T. Kocis, Samuel C. Ramac, David M. Rockwell | 2003-12-02 |
| 6506656 | Stepped collector implant and method for fabrication | Gregory G. Freeman, Shwu-Jen Jeng, Jeffrey B. Johnson | 2003-01-14 |
| 6426265 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Jack O. Chu, Douglas D. Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more | 2002-07-30 |