| 11916384 |
Region-based power grid generation through modification of an initial power grid based on timing analysis |
David Wolpert, Michael H. Wood, Leon Sigal, James Leland, Alexander J. Suess +2 more |
2024-02-27 |
$9,833,000 |
| 9754071 |
Integrated circuit (IC) design analysis and feature extraction |
Haraprasad Nanjundappa, Laura S. Chadwick, Dureseti Chidambarrao, Christopher V. Baiocco |
2017-09-05 |
$9,231,000 |
| 8829572 |
Structure and layout of a FET prime cell |
John J. Pekarik, Christopher M. Schnabel |
2014-09-09 |
$5,167,000 |
| 8187930 |
Structure and layout of a FET prime cell |
John J. Pekarik, Christopher M. Schnabel |
2012-05-29 |
$10,419,000 |
| 7741857 |
System and method for de-embedding a device under test employing a parametrized netlist |
Zhenrong Jin, Hongmei Li |
2010-06-22 |
$6,664,000 |
| 7713829 |
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology |
Jack O. Chu, Douglas D. Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more |
2010-05-11 |
$5,650,000 |
| 7355221 |
Field effect transistor having an asymmetrically stressed channel region |
Gregory G. Freeman, Anil K. Chinthakindi, David R. Greenberg, Marwan H. Khater, John J. Pekarik +1 more |
2008-04-08 |
$6,866,000 |
| 7183576 |
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD |
Jack O. Chu, Alfred Grill, Bernard S. Meyerson, John A. Ott |
2007-02-27 |
$7,582,000 |
| 7173274 |
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology |
Jack O. Chu, Douglas D. Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more |
2007-02-06 |
$8,225,000 |
| 6927476 |
Bipolar device having shallow junction raised extrinsic base and method for making the same |
Gregory G. Freeman, Seshadri Subbanna, Kathryn T. Schonenberg, Shwu-Jen Jeng, Kenneth J. Stein +1 more |
2005-08-09 |
$5,698,000 |
| 6908866 |
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD |
Jack O. Chu, Alfred Grill, Bernard S. Meyerson, John A. Ott |
2005-06-21 |
$6,933,000 |
| 6881259 |
In-situ monitoring and control of germanium profile in silicon-germanium alloy films and temperature monitoring during deposition of silicon films |
David C. Ahlgren, Jack O. Chu, Ryan Wuthrich |
2005-04-19 |
$7,105,000 |
| 6875279 |
Single reactor, multi-pressure chemical vapor deposition for semiconductor devices |
Jack O. Chu, Ryan Wuthrich |
2005-04-05 |
$5,479,000 |
| 6858532 |
Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling |
Wesley C. Natzle, David C. Ahlgren, Steven G. Barbee, Marc W. Cantell, Louis D. Lanzerotti +2 more |
2005-02-22 |
$11,368,000 |
| 6815802 |
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology |
Jack O. Chu, Douglass Duane Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more |
2004-11-09 |
$4,707,000 |
| 6787427 |
Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics |
David R. Greenberg, Shwu-Jen Jeng, Joseph T. Kocis, Samuel C. Ramac, David M. Rockwell |
2004-09-07 |
$9,920,000 |
| 6780735 |
Method to increase carbon and boron doping concentrations in Si and SiGe films |
Jack O. Chu, Ryan Wuthrich, Byeongju Park |
2004-08-24 |
$9,549,000 |
| 6780695 |
BiCMOS integration scheme with raised extrinsic base |
Huajie Chen, Seshadri Subbanna, Gregory G. Freeman, David C. Ahlgren, David Angell +3 more |
2004-08-24 |
$9,549,000 |
| 6750119 |
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD |
Jack O. Chu, Alfred Grill, Bernard S. Meyerson, John A. Ott |
2004-06-15 |
$11,083,000 |
| 6744079 |
Optimized blocking impurity placement for SiGe HBTs |
Alvin J. Joseph, Xuefeng Liu, Kathryn T. Schonenberg, Ryan Wuthrich |
2004-06-01 |
$8,295,000 |
| 6660607 |
Method for fabricating heterojunction bipolar transistors |
— |
2003-12-09 |
$6,520,000 |
| 6656809 |
Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics |
David R. Greenberg, Shwu-Jen Jeng, Joseph T. Kocis, Samuel C. Ramac, David M. Rockwell |
2003-12-02 |
$4,756,000 |
| 6506656 |
Stepped collector implant and method for fabrication |
Gregory G. Freeman, Shwu-Jen Jeng, Jeffrey B. Johnson |
2003-01-14 |
$20,025,000 |
| 6426265 |
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology |
Jack O. Chu, Douglas D. Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more |
2002-07-30 |
$10,205,000 |
