BJ

Basanth Jagannathan

IBM: 22 patents #4,909 of 70,183Top 7%
Globalfoundries: 1 patents #2,221 of 4,424Top 55%
IN Intel: 1 patents #18,218 of 30,777Top 60%
Overall (All Time): #169,942 of 4,157,543Top 5%
24
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
11916384 Region-based power grid generation through modification of an initial power grid based on timing analysis David Wolpert, Michael H. Wood, Leon Sigal, James Leland, Alexander J. Suess +2 more 2024-02-27
9754071 Integrated circuit (IC) design analysis and feature extraction Haraprasad Nanjundappa, Laura S. Chadwick, Dureseti Chidambarrao, Christopher V. Baiocco 2017-09-05
8829572 Structure and layout of a FET prime cell John J. Pekarik, Christopher M. Schnabel 2014-09-09
8187930 Structure and layout of a FET prime cell John J. Pekarik, Christopher M. Schnabel 2012-05-29
7741857 System and method for de-embedding a device under test employing a parametrized netlist Zhenrong Jin, Hongmei Li 2010-06-22
7713829 Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology Jack O. Chu, Douglas D. Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more 2010-05-11
7355221 Field effect transistor having an asymmetrically stressed channel region Gregory G. Freeman, Anil K. Chinthakindi, David R. Greenberg, Marwan H. Khater, John J. Pekarik +1 more 2008-04-08
7183576 Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD Jack O. Chu, Alfred Grill, Bernard S. Meyerson, John A. Ott 2007-02-27
7173274 Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology Jack O. Chu, Douglas D. Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more 2007-02-06
6927476 Bipolar device having shallow junction raised extrinsic base and method for making the same Gregory G. Freeman, Seshadri Subbanna, Kathryn T. Schonenberg, Shwu-Jen Jeng, Kenneth J. Stein +1 more 2005-08-09
6908866 Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD Jack O. Chu, Alfred Grill, Bernard S. Meyerson, John A. Ott 2005-06-21
6881259 In-situ monitoring and control of germanium profile in silicon-germanium alloy films and temperature monitoring during deposition of silicon films David C. Ahlgren, Jack O. Chu, Ryan Wuthrich 2005-04-19
6875279 Single reactor, multi-pressure chemical vapor deposition for semiconductor devices Jack O. Chu, Ryan Wuthrich 2005-04-05
6858532 Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling Wesley C. Natzle, David C. Ahlgren, Steven G. Barbee, Marc W. Cantell, Louis D. Lanzerotti +2 more 2005-02-22
6815802 Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology Jack O. Chu, Douglass Duane Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more 2004-11-09
6787427 Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics David R. Greenberg, Shwu-Jen Jeng, Joseph T. Kocis, Samuel C. Ramac, David M. Rockwell 2004-09-07
6780735 Method to increase carbon and boron doping concentrations in Si and SiGe films Jack O. Chu, Ryan Wuthrich, Byeongju Park 2004-08-24
6780695 BiCMOS integration scheme with raised extrinsic base Huajie Chen, Seshadri Subbanna, Gregory G. Freeman, David C. Ahlgren, David Angell +3 more 2004-08-24
6750119 Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD Jack O. Chu, Alfred Grill, Bernard S. Meyerson, John A. Ott 2004-06-15
6744079 Optimized blocking impurity placement for SiGe HBTs Alvin J. Joseph, Xuefeng Liu, Kathryn T. Schonenberg, Ryan Wuthrich 2004-06-01
6660607 Method for fabricating heterojunction bipolar transistors 2003-12-09
6656809 Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics David R. Greenberg, Shwu-Jen Jeng, Joseph T. Kocis, Samuel C. Ramac, David M. Rockwell 2003-12-02
6506656 Stepped collector implant and method for fabrication Gregory G. Freeman, Shwu-Jen Jeng, Jeffrey B. Johnson 2003-01-14
6426265 Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology Jack O. Chu, Douglas D. Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more 2002-07-30